functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
functionalized surfaces on porous silica by atomic layer ... - Aaltodoc
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the Si-N b<strong>on</strong>ds disappeared from both the 29 Si NMR and DRIFT spectra. This is due to the<br />
sensitivity of Si-N b<strong>on</strong>ds to hydrolysis. 134<br />
Figure 16. 29 Si CP/MAS NMR spectra of APTS <strong>on</strong> <strong>silica</strong> pretreated at 600 °C after reacti<strong>on</strong>s<br />
at (a) 150 °C, (b) 200 °C, and (c) 300 °C. Some surface structures corresp<strong>on</strong>ding to selected<br />
peaks are shown. IV,V<br />
The surface density of nitrogen and carb<strong>on</strong> atoms <strong>on</strong> <strong>silica</strong> after treatment with APTS clearly<br />
decreased when the depositi<strong>on</strong> temperature was raised from 150 °C to 300 °C. Thus, as<br />
expected, the number of aminopropylsilyl groups <strong>on</strong> <strong>silica</strong> decreases at higher depositi<strong>on</strong><br />
temperature. Likewise, the carb<strong>on</strong>/nitrogen ratio decreased when the depositi<strong>on</strong> temperature<br />
was increased, indicating that a larger number of ethoxy groups react or decompose <strong>on</strong> the<br />
surface at higher reacti<strong>on</strong> temperature. The variati<strong>on</strong> in the elemental c<strong>on</strong>centrati<strong>on</strong>s of<br />
samples deposited at high temperatures also supports the assumpti<strong>on</strong> that decompositi<strong>on</strong> of<br />
aminopropylsilanes <strong>on</strong> <strong>silica</strong> occurs. The O-H stretching band of free silanols in the DRIFT<br />
spectrum was observed for APTS deposited at 300 °C <strong>on</strong> <strong>silica</strong>, which also indicates<br />
decompositi<strong>on</strong> of ethoxy groups and other surface structures <strong>on</strong> <strong>silica</strong>, as has been observed<br />
earlier for triethoxysilane, HSi(OEt)3. 52 The existence of OH groups <strong>on</strong> the surface was<br />
further seen in 1 H MAS NMR measurements. At depositi<strong>on</strong> temperatures higher than 150 °C<br />
the depositi<strong>on</strong> <strong>on</strong> <strong>silica</strong> is no l<strong>on</strong>ger ALD–type surface-saturated growth. Thus, the ALD<br />
window for aminopropylalkoxysilanes <strong>on</strong> <strong>silica</strong> is very narrow.<br />
41