Gallium Arsenide (GaAs) - Courses

Gallium Arsenide (GaAs)
eV
cm - 1
TABLE II (Continued)
Gallium Arsenide
/lm n k
0.03 162 255 39.22 5.57 0.t53
0.03100 250 40.00 5.08 9.02 x 10- 2
0.02976 240 41.67 4.57 4.26
0.02852 230 43.48 4.30 2.49
0.02728 220 45.45 4.13 1.63
0.02604 210 47.62 4.02 U S x 10- 2
0.02480 200 SO.OO 3.93
3.87 [1 ]
8.49 x 10 - 3
0.02356 190 52.63 1.09 x 10 - 2 [1 2]
0.02232 180 55.56 1.22
0.02108 170 58.82 1.25 x 10- 2
0.02066 166.7 60 3.77 [2, 3] 3.89 x 10- 3 [2, 3]
3.74 [ 1] 6.92 x 10- 3 [1 ]
0.01984 160 62.S0 US x 10- 2 [12J
0.01860 150 66.67 6.4 x 10- 3
0.0177 1 142.9 70 3.71 [ 2, 3J
3.68 [IJ
3.79 [ 1 J
0.01736 140 71.43 5.0 [12J
0.01612 130 76.92 4.4
0.01550 125 80 3.681 [ 2, 3J 1.84 [2, 3J
3.65 [1 J 3.18 [IJ
0.0 1488 120 83.33 3.9 [ 12J
0.01378 111.1 90 3.662 [2, 3]
3.635 [1 J 2.86 [1 J
0.01364 110 90.91 3.6 [12J
0.01240 100 100 3.650 [2, 3J 3.6
3.625 [ IJ 2.78 [ IJ
0.01116 90 11 1.1 3.8 [1 2J
0.009919 80 125.0 4.2
0.008679 70 142.9 3.5
0.008266 66.67 150 3.623 [ 2, 3J
3.62 [IJ
2.14[IJ
0.007439 60 166.7 2.1 [ 12J
0.006199 50.00 200 3.615 [ 2, 3J
3.61 [ IJ
1.8 [ 12J
0.004959 40 250.0 1.4
0.004133 33.33 300 3.611 [2, 3]
3.60 [1]
0.003720 30 333.3 l.l
0.003 100 25 400 1.2
0.002480 20 500 3.607 [ 2, 3J 1.3
0.001 860 15 667 1.2
0.001240 10 1000 3.606
443