Gallium Arsenide (GaAs) - Courses

Gallium Phosphide (GaP) 449
tween the a experimental data from Cardona et al. [17, 18] and the a values
obtained from KK processing of early R data [16] can be attributed to
R-limited range of R spectra and to the inadequacy of the conventional gasdischarge
spectroscopic sources; in fact, hot-cathode argon lamps have typical
separation of about 1 e V between adjacent lines, equal to the expected
spin-orbit splitting of core levels (0.53 e V for Ga) and to separation between
peaks in the density of conduction states.
In Table IV nand k values in the 0.44-0.08-J-lm range have been obtained
by KK transform on R spectra from Philipp and Ehrenreich [16J and
Stokowski and Sell [19J, extended to shorter wavelengths with the data of
Gudat et al. [20] and longer wavelengths (visible and infrared) with those of
Kleiman and Spitzer [lJ, Giehler and lahne [6J, and Bond [9]. The results
are in fair agreement with the dielectric function ellipsometrically determined
between 0.36 and 0.31 J-lm [21].
REFERENCES
1. D. A. Kleinman and W. G. Spitzer, Phys. Rev. lIS, 110 (1960).
2. A. S. Barker, Jr., Phys. Rev. 165,917 (1968).
3. D. F. Parsons and P. D. Coleman, App/. Opt. 10, 1683 (1971).
4. S. A. Abagyan, G. A. Ivanov, Y. E. Shanurin, and V. I. Amosov, Sov. Phys. Semicond. 5, 889
(1971).
5. S. A. Abagyan, G. A. Ivanov, A. P. Izergin, and Y. E. Shanurin, Sov. Phys. Semicond. 6, 985
(1972).
6. M. Giehler and E. Jahne, Phys. Status Solidi B 73,503 (1976).
7. A. N. Pikhtin, V. T. Prokopenko, and A. D. Yas'kov, Sov. Phys. Semicond. 10, 1224 (1976).
8. W. G . Spitzer, M. Gershenzon, C. 1. Forsch, and D. F. Gibbs, J. Phys. Chem. Sol. 11, 339
(1959).
9. W. L. Bond, J. Appl. Phys. 36, 1674 (1965).
10. P.1. Dean and D. G. Thomas, Phys. Rev. 150,690 (1966).
11. P.1. Dean, G. Kaminsky, and R. B. Zetterstrom, J. Appl. Phys. 3S, 3551 (1967).
12. A. D. Remenyuk, L. G. Zabelina, Yu. 1. Ukhanov, and Y. V. Shmartzev, Sov. Phys. Semicond.
2, 557 (1968).
13. D. F. Nelson and E. H. Turner, J. App/. Phys. 39, 3337 (1968).
14. A. N. Pikhtin and D. A. Yas'kov. Sov. Phys. Solid State 11, 455 (1969).
15. A. N. Pikhtin and D. A. Yas'kov. Phys. Status Solidi 34, 815 (1969).
16. H. R. Philipp and H. Ehrenreich, in "Semiconductors and Semimetals" (R. K. Willardson
and A. C. Beer, eds.), Vol. 3, Chapter 4. Academic, New York, 1967.
17. M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, Proc. Int. ConI Phys. Semicond. Cambridge,
1970, p. 208. U.S. Atomic Energy Commission, Oak Ridge, Tennessee, 1970.
18. M. Cardona, W. Gudat, E. E. Koch, M. Skibowski, B. Sonntag, and P. Yu, Phys. Rev.
Lett. 25, 659 (1970).
19. S. E. Stokowski and D. D. Sell, Phys. Rev. B 5, 1636 (1972).
20. W. Gudat, E. E. Koch, P. Y. Yu, M. Cardona, and C. M. Penchina, Phys. Status Solidi
B 52,505 (1972).
21. G. Jungk, Phys. Status Solidi B 67,85 (1975).
22. H. Welker, J. Electron. I, 181 (1955).
23. B. O. Seraphin and H. E. Bennett, in "Semiconductors and Semi metals" (R. K. Willardson
and A. C. Beer, eds.), Vol. 3, p. 219. Academic, New York, 1967.
24. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983); D. E. Aspnes and A. A. Studna,
private communication (1982).