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MPC5668x Data Sheet - Freescale Semiconductor

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Electrical characteristics<br />

2 VDDE1 – V DDE4 are separate power segments and may be powered independently with no differential voltage constraints<br />

between the power segments. V DDE1 – V DDE3 pad power segments contain ADC analog input channels and thus the input<br />

analog signal level may be clamped to the V DDE level, resulting in inaccurate ADC results if the V DDE voltage level is less than<br />

V DDA.<br />

3 When VRCSEL = V DDA (high), the internally generated V DD33 voltage may be used to power V DDEMLB as long as the PK[0:2]<br />

pads remain in the disabled default state with their output buffers, input buffers, and pull devices disabled.<br />

4 The pad type is indicated by one or more of the following abbreviations: A–analog, F—fast speed, H–high voltage, I—input-only,<br />

M–medium speed, S–slow speed. For example, pad type SH designates a slow high-voltage pad.<br />

5 The IHA pads are related to VDDA.<br />

6 Characterization Based Capability:<br />

IOH_F = {12, 20, 30, 40} mA and IOL_F = {24, 40, 50, 65} mA for {00, 01,10, 11} drive mode with V DDE = 3.0 V;<br />

IOH_F = {7, 13, 18, 25} mA and IOL_F = {18, 30, 35, 50} mA for {00, 01, 10, 11} drive mode with V DDE =2.25 V;<br />

IOH_F = {3, 7, 10, 15} mA and IOL_F = {12, 20, 27, 35} mA for {00, 01, 10, 11} drive mode with V DDE =1.62 V.<br />

7 Characterization Based Capability:<br />

IOH_S = {6, 11.6} mA and IOL_S = {9.2, 17.7} mA for {slow, medium} I/O with V DDEH = 4.5 V;<br />

IOH_S = {2.8, 5.4} mA and IOL_S = {4.2, 8.1} mA for {slow, medium} I/O with V DDEH = 3.0 V<br />

8 All VOL /V OH values 100% tested with ±2 mA load.<br />

9 Absolute value of current, measured at VIL and V IH.<br />

10 Weak pull up/down inactive. Measured at VDDE = 5.25 V. Applies to pad types: SH and MH. Leakage specification guaranteed<br />

only when power supplies are within specified operating conditions.<br />

11 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each<br />

8 to 12 o C, in the ambient temperature range of 50 to 125 o C. Applies to pad types: pad_a and pad_ae.<br />

4.6 Operating current specifications<br />

32<br />

Table 10. Operating currents<br />

Spec Characteristic Symbol<br />

Equations I TOTAL =I DDE +I DDA +I RH +I DD33 +I DDSYN +I RC +I DD<br />

I DDE =I DDE1 +I DDE2 +I DDE3 +I DDE4 +I DDEMLB<br />

1 VDDE Current<br />

VDDE(1,2,3,4) @ 3.0V–5.5V<br />

VDDEMLB @ 2.375V–3.6V<br />

Static 2<br />

Dynamic 3<br />

2 VDDA Current<br />

VDDA @ 3.0V–5.5V<br />

Run mode<br />

Sleep mode<br />

– Optional 32 kHz osc enabled<br />

3 VRH Current<br />

VRH @ 3.0V–5.5V<br />

Run mode<br />

Sleep mode<br />

4 VDD33 Current<br />

VDD33 @ 3.0V–3.6V<br />

Run mode<br />

Sleep mode<br />

PXN20 Microcontroller <strong>Data</strong> <strong>Sheet</strong>, Rev. 1<br />

Typ 1<br />

25 C<br />

Ambient<br />

Max 1<br />

–40–150 C<br />

Junction<br />

Unit<br />

— — — —<br />

I DDE<br />

I DDA<br />

I RH<br />

I DD33<br />

0<br />

Note 3<br />

1<br />

20<br />

+5<br />

300<br />

1<br />

10<br />

10<br />

30<br />

25<br />

30<br />

50<br />

+15<br />

700<br />

30<br />

20<br />

20<br />

A<br />

mA<br />

mA<br />

A<br />

A<br />

A<br />

A<br />

mA<br />

A<br />

<strong>Freescale</strong> <strong>Semiconductor</strong>

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