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MPC5668x Data Sheet - Freescale Semiconductor

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Electrical characteristics<br />

4.13 Pad AC specifications<br />

40<br />

6 256 KB Block Pre-program and Erase Time t 256kpperase — 5200 15,000 ms<br />

7 Wait States Relative to System Frequency 5<br />

PFCRPn[RWSC] = PFCRPn[APC] = 0b000; PFCRPn[WWSC] = 0b01<br />

PFCRPn[RWSC] = PFCRPn[APC] = 0b001; PFCRPn[WWSC] = 0b01<br />

PFCRPn[RWSC] = PFCRPn[APC] = 0b010; PFCRPn[WWSC] = 0b01<br />

PFCRPn[RWSC] = PFCRPn[APC] = 0b011 – 0b111; PFCRPn[WWSC] = 0b01<br />

PXN20 Microcontroller <strong>Data</strong> <strong>Sheet</strong>, Rev. 1<br />

t rwsc<br />

—<br />

—<br />

—<br />

—<br />

—<br />

—<br />

—<br />

—<br />

30<br />

60<br />

90<br />

f SYS max<br />

8 Recovery Time t Recover — — 45 s<br />

1<br />

Typical program and erase times assume nominal supply values and operation at 25<br />

o<br />

C.<br />

2<br />

Initial factory condition: 100program/erase cycles, nominal supply values and operation at 25<br />

o<br />

C.<br />

3<br />

The maximum time is at worst case conditions after the specified number of program/erase cycles. This maximum value is<br />

characterized but not guaranteed.<br />

4<br />

Actual hardware programming time. This does not include software overhead.<br />

5<br />

Wait state timing is based on the system clock frequency and thus is same for all masters.<br />

Table 22. Flash EEPROM Module Life (Full Temperature Range)<br />

Spec Characteristic Symbol Min Typical 1<br />

1 Number of Program/Erase cycles per block for 16 KB and 64 KB blocks<br />

over the operating temperature range (TJ) 2 Number of Program/Erase cycles per block for 128 KB blocks over the<br />

operating temperature range (TJ) 3 Minimum <strong>Data</strong> Retention at 85 °C ambient temperature2 Blocks with 0–1,000 P/E cycles<br />

Blocks with 1,001–10,000 P/E cycles<br />

Blocks with 10,001–100,000 P/E cycles<br />

1 o<br />

Typical endurance is evaluated at 25 C. Product qualification is performed to the minimum specification. For additional<br />

information on the <strong>Freescale</strong> definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance<br />

for Nonvolatile Memory.<br />

2 Ambient temperature averaged over duration of application, not to exceed product operating temperature range.<br />

MHz<br />

Unit<br />

P/E 100,000 — cycles<br />

P/E 1,000 100,000 cycles<br />

Retention<br />

Table 23. Pad AC specifications (5.0 V, 2.5 V) 1<br />

Spec Pad Type 2 SRC/DSC 3 Output Delay 4,4 (ns)<br />

1 Slow 7<br />

Table 21. Flash program and erase specifications 1 (continued)<br />

Spec Characteristic Symbol Min Initial<br />

Max 2 Max 3 Unit<br />

00<br />

01<br />

11<br />

Rise/Fall 5,6<br />

(ns)<br />

20<br />

10<br />

1–5<br />

— years<br />

Load Drive<br />

(pF)<br />

318/343 155/173 50<br />

408/431 188/204 200<br />

61/67 30/34 50<br />

80/90 38/44 200<br />

18/18 10/11 50<br />

27/28 15/17 200<br />

<strong>Freescale</strong> <strong>Semiconductor</strong>

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