MPC5668x Data Sheet - Freescale Semiconductor
MPC5668x Data Sheet - Freescale Semiconductor
MPC5668x Data Sheet - Freescale Semiconductor
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Electrical characteristics<br />
4.13 Pad AC specifications<br />
40<br />
6 256 KB Block Pre-program and Erase Time t 256kpperase — 5200 15,000 ms<br />
7 Wait States Relative to System Frequency 5<br />
PFCRPn[RWSC] = PFCRPn[APC] = 0b000; PFCRPn[WWSC] = 0b01<br />
PFCRPn[RWSC] = PFCRPn[APC] = 0b001; PFCRPn[WWSC] = 0b01<br />
PFCRPn[RWSC] = PFCRPn[APC] = 0b010; PFCRPn[WWSC] = 0b01<br />
PFCRPn[RWSC] = PFCRPn[APC] = 0b011 – 0b111; PFCRPn[WWSC] = 0b01<br />
PXN20 Microcontroller <strong>Data</strong> <strong>Sheet</strong>, Rev. 1<br />
t rwsc<br />
—<br />
—<br />
—<br />
—<br />
—<br />
—<br />
—<br />
—<br />
30<br />
60<br />
90<br />
f SYS max<br />
8 Recovery Time t Recover — — 45 s<br />
1<br />
Typical program and erase times assume nominal supply values and operation at 25<br />
o<br />
C.<br />
2<br />
Initial factory condition: 100program/erase cycles, nominal supply values and operation at 25<br />
o<br />
C.<br />
3<br />
The maximum time is at worst case conditions after the specified number of program/erase cycles. This maximum value is<br />
characterized but not guaranteed.<br />
4<br />
Actual hardware programming time. This does not include software overhead.<br />
5<br />
Wait state timing is based on the system clock frequency and thus is same for all masters.<br />
Table 22. Flash EEPROM Module Life (Full Temperature Range)<br />
Spec Characteristic Symbol Min Typical 1<br />
1 Number of Program/Erase cycles per block for 16 KB and 64 KB blocks<br />
over the operating temperature range (TJ) 2 Number of Program/Erase cycles per block for 128 KB blocks over the<br />
operating temperature range (TJ) 3 Minimum <strong>Data</strong> Retention at 85 °C ambient temperature2 Blocks with 0–1,000 P/E cycles<br />
Blocks with 1,001–10,000 P/E cycles<br />
Blocks with 10,001–100,000 P/E cycles<br />
1 o<br />
Typical endurance is evaluated at 25 C. Product qualification is performed to the minimum specification. For additional<br />
information on the <strong>Freescale</strong> definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance<br />
for Nonvolatile Memory.<br />
2 Ambient temperature averaged over duration of application, not to exceed product operating temperature range.<br />
MHz<br />
Unit<br />
P/E 100,000 — cycles<br />
P/E 1,000 100,000 cycles<br />
Retention<br />
Table 23. Pad AC specifications (5.0 V, 2.5 V) 1<br />
Spec Pad Type 2 SRC/DSC 3 Output Delay 4,4 (ns)<br />
1 Slow 7<br />
Table 21. Flash program and erase specifications 1 (continued)<br />
Spec Characteristic Symbol Min Initial<br />
Max 2 Max 3 Unit<br />
00<br />
01<br />
11<br />
Rise/Fall 5,6<br />
(ns)<br />
20<br />
10<br />
1–5<br />
— years<br />
Load Drive<br />
(pF)<br />
318/343 155/173 50<br />
408/431 188/204 200<br />
61/67 30/34 50<br />
80/90 38/44 200<br />
18/18 10/11 50<br />
27/28 15/17 200<br />
<strong>Freescale</strong> <strong>Semiconductor</strong>