AN-9044 - Fairchild Semiconductor

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Mini DIP (SPM3) Application Note (2012-07-09) thermal impedance curves of FSBB30CH60C, FSBB15CH60C, FSBF10CH60B and FSBF3CH60B. The thermal resistance goes into saturation in about 10 seconds. Other kinds of SPM also show similar characteristics. Z th(J-C) Z th(J-C) Z th(J-C) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Z th(J-C)_IGBT 0.0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 3.0 2.5 2.0 1.5 1.0 0.5 Pulse Duration [sec] 0.0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 7 6 5 4 3 2 1 Z th(J-C)_IGBT Z th(J-C)_IGBT Pulse Duration [sec] 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Pulse Duration [sec] © 2008 FAIRCHILD SEMICONDUCTOR - Smart Power Module 46 Z th(J-C) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 (a) FSBB30CH60C Z th(J-C) Z th(J-C)_FRD 0.0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 (b) FSBB15CH60C Z th(J-C) (c) FSBF10CH60B 7 6 5 4 3 2 1 Z th(J-C)_FRD Pulse Duration [sec] 0.0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Z th(J-C)_FRD Pulse Duration [sec] 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Pulse Duration [sec]
Z th(J-C) 8 7 6 5 4 3 2 1 Z th(J-C)_IGBT 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Pulse Duration [sec] 9.2.2 Measurement Method Mini DIP (SPM3) Application Note (2012-07-09) © 2008 FAIRCHILD SEMICONDUCTOR - Smart Power Module 47 Z th(J-C) (d) FSBF3CH60B 8 7 6 5 4 3 2 1 Z th(J-C)_FRD 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Figure 9.2 Normalized Thermal impedance curves. Pulse Duration [sec] During the thermal resistance test, Tj, Tc (or Ta) and PD should be measured. Since Tc, Ta and PD can be measured directly, the only unknown constant is the junction temperature, Tj. The Electrical Test Method (ETM) is widely used to measure the junction temperature. The ETM is a test method using the relationship between forward drop voltage and junction temperature. This relationship is an intrinsic electro-thermal property of semiconductor junctions, and is characterized by a nearly linear relationship between the forward-biased drop voltage and the junction temperature, when a constant forward-biased current (sense current) is applied. This voltage drop of the junction is called Temperature Sensitive Parameter (TSP). Figure 9.3 illustrates the concept of measuring the voltage drop vs. junction temperature relationship for a diode junction. The device under test (DUT) is embedded in hot fluid to heat DUT up to desired temperatures. Thermocouple attached to case Volta g e M easure Sense Current Device Stirre d Dielectic Bath Heater Figure 9.3 Illustration of the bath method for TSP measurement
Page 1 and 2: Mini DIP (SPM3) Application Note (2
Page 7 and 8: Al IC Wire IGBT FRD Lead Frame DBC
Page 9 and 10: 1.5 Summary Mini DIP (SPM3) Applica
Page 11 and 12: 2.4 Package Structure Mini DIP (SPM
Page 29 and 30: 7. Function and Protection Circuit
Page 31 and 32: Input Signal Protection Circuit Sta
Page 33 and 34: Lower arms control input Internal I
Page 35 and 36: Rshunt Other phases sensing block V
Page 37 and 38: 7.5 TSD (Thermal Shut-Down) Protect
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Page 53 and 54: R Rha ha (℃/W) 3.6 3.2 2.8 2.4 Mi
Page 55 and 56: Airflow direction e b f a Mini DIP
Page 57 and 58: 10.2 Handling Precaution Mini DIP (
Page 59 and 60: Electrical Shock Mini DIP (SPM3) Ap
Page 61 and 62: 10.4 Packaging Specifications Mini

AN-9044 - Fairchild Semiconductor

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