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THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

ISSUE N°112 MAY 11, 2011<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

E D I T O R I A L<br />

PiezoMEMS<br />

market is<br />

forecasted<br />

to grow<br />

In this issue of <strong>Micronews</strong>, I encourage you<br />

to have a look at the SolMateS’ news.<br />

SolMateS is a Dutch company that has<br />

recently received a three million dollar<br />

<strong>in</strong>vestment for the f<strong>in</strong>al stage of development<br />

of their piezoelectric deposition mach<strong>in</strong>e.<br />

This confirms a trend we recently identified:<br />

a “reborn” of the <strong>in</strong>terest for piezo actuated<br />

MEMS device us<strong>in</strong>g ferroelectric th<strong>in</strong> films.<br />

Indeed, such th<strong>in</strong> films have been used for<br />

many years <strong>in</strong> Integrated Passives Devices<br />

(IPDs), Ferroelectric memories (FeRAM) and<br />

MEMS <strong>in</strong>kjet heads. Such th<strong>in</strong> films can be<br />

used for their different physical properties:<br />

ferroelectric, piezoelectric or pyroelectric<br />

properties.<br />

Today, because of a better knowledge and<br />

<strong>in</strong>dustrialization of these materials, they are<br />

<strong>in</strong>creas<strong>in</strong>gly used <strong>in</strong> many new applications,<br />

and especially <strong>in</strong> the MEMS field. We can<br />

name a few of them: MEMS wafer level<br />

autofocus, RF MEMS, MEMS ultrasonic<br />

transducers, <strong>in</strong>frared sensors…..Driven by<br />

exist<strong>in</strong>g and new MEMS applications, we<br />

have estimated the production of ferroelectric<br />

th<strong>in</strong> films will undergo a CAGR of +7.5 % over<br />

2010-2015. Inkjet head application and IPDs<br />

ESD/EMI planar capacitor represent more<br />

than 90% of the production <strong>in</strong> 2010 but other<br />

applications will grow strongly. In the next 5<br />

years, we have identified many new players<br />

who plan to adopt or evaluate ferroelectric<br />

th<strong>in</strong> films to enter <strong>in</strong>to key markets, from<br />

MEMS SMEs to large InkJet Heads/IPD<br />

groups.<br />

Yole Développement th<strong>in</strong>ks this is really good<br />

news for equipment/materials makers as well.<br />

Dr. Éric Mounier<br />

Editor-<strong>in</strong>-chief<br />

PLATINUM PARTNERS<br />

MEMS<br />

<strong>Microvision</strong> <strong>establishes</strong> <strong>first</strong> <strong>global</strong> R&D <strong>center</strong><br />

<strong>in</strong> S<strong>in</strong>gapore<br />

New R&D <strong>center</strong> to develop breakthrough <strong>in</strong>novations <strong>in</strong> laser display and imag<strong>in</strong>g<br />

for mobile, automotive, and medical applications.<br />

The research facility, located on NTU's sprawl<strong>in</strong>g<br />

200-hectare green campus, will focus on<br />

develop<strong>in</strong>g <strong>in</strong>novative breakthrough products<br />

us<strong>in</strong>g MicroVision's PicoP ® Display technology.<br />

MicroVision plans to staff the new R&D facility with up<br />

ADVANCED PACKAGING<br />

STATS ChipPAC was one of the fi rst Outsourced<br />

Semiconductor Assembly and Test (OSAT)<br />

providers to <strong>in</strong>vest <strong>in</strong> TSV technology with a<br />

51,000 square foot research and development facility<br />

dedicated to the development of next generation wafer<br />

level <strong>in</strong>tegration with TSV technology.<br />

One of the fi rst implementations of TSV technology is<br />

<strong>in</strong> the form of silicon <strong>in</strong>terposers used to bridge 2D<br />

silicon designs <strong>in</strong>to more advanced and effi cient 3D<br />

configurations. Often referred to as the 2.5D<br />

technology, TSV <strong>in</strong>terposers are an immediate and<br />

practical approach to die level <strong>in</strong>tegration us<strong>in</strong>g the<br />

capabilities of TSV technology. TSV <strong>in</strong>terposers<br />

The purpose of the fund is to provide growth<br />

fi nanc<strong>in</strong>g for young, promis<strong>in</strong>g nanotechnology<br />

companies <strong>in</strong> the adm<strong>in</strong>istrative district Perm.<br />

Nanostart AG will <strong>in</strong>vest up to 25 percent of the fund<br />

volume, 12.5 million euros, as well as manage the fund.<br />

C O N T E N T S<br />

•COWIN 3<br />

•MEMS 8<br />

•MICROFLUIDICS 12<br />

•COMPOUND SEMICONDUCTORS 14<br />

•PHOTONICS 15<br />

to 25 eng<strong>in</strong>eers by 2012 to work on advanced research<br />

and development projects, perform operational support<br />

functions, and build upon the company's current<br />

<strong>in</strong>dustry lead<strong>in</strong>g portfolio of over 500<br />

patents issued and pend<strong>in</strong>g…<br />

STATS ChipPAC expands 300mm Through Silicon<br />

Via capabilities<br />

STATS ChipPAC announced it is expand<strong>in</strong>g its 300mm TSV offer<strong>in</strong>g with the<br />

addition of mid-end manufactur<strong>in</strong>g capabilities.<br />

NANOTECHNOLOGY<br />

provide fl exibility for the <strong>in</strong>tegration of die from different<br />

technology nodes and deliver advantages <strong>in</strong><br />

m<strong>in</strong>iaturisation, thermal performance and<br />

fi ne l<strong>in</strong>e/width spac<strong>in</strong>g <strong>in</strong> a semiconductor<br />

package…<br />

Nanostart launches nanotechnology fund <strong>in</strong> Russia<br />

Together with RUSNANO and the Governor of the adm<strong>in</strong>istrative district Perm,<br />

Nanostart is launch<strong>in</strong>g a nanotechnology fund <strong>in</strong> Russia.<br />

RUSNANO and the governor of Perm are <strong>in</strong>vest<strong>in</strong>g<br />

equal amounts for a total of 37.5 million euros, which<br />

represents 75 percent of the fund volume.<br />

•PHOTOVOLTAIC 16<br />

•ADVANCED PACKAGING 18<br />

•NANOTECHNOLOGY 20<br />

•POWER ELECTRONICS 21<br />

Y O L E D É V E L O P P E M E N T<br />

Free registration on<br />

www.i-micronews.com<br />

8<br />

18<br />

2.5D silicon <strong>in</strong>terposer "PoP module" demonstrator<br />

from STATS ChipPAC<br />

20<br />

1


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

TO MEET US<br />

CS Mantech - Palm Spr<strong>in</strong>gs, CA -<br />

May 17 to 20, 2011<br />

Jo<strong>in</strong> the CS-MANTECH conference at the Hyatt<br />

Grand Champions Resort & Spa and br<strong>in</strong>g<br />

yourself up-to-date on the latest <strong>in</strong> compound<br />

semiconductor (GaAs, GaN, SiC and related<br />

materials) manufactur<strong>in</strong>g processes. Full Details<br />

<strong>in</strong>clud<strong>in</strong>g Advance Program on the website.<br />

PCIM Europe - Nuremberg, Germany -<br />

May 17 to 19, 2011<br />

Visit the lead<strong>in</strong>g show <strong>in</strong> power electronics,<br />

<strong>in</strong>telligent motion and power qualify and have a<br />

look at the comprehensive conference program.<br />

The visit of the exhibtion is free of charge with<br />

pre-registration. From 17 – 19 May 2011,<br />

Nuremberg will be the meet<strong>in</strong>g po<strong>in</strong>t for<br />

<strong>in</strong>ternational experts from science and <strong>in</strong>dustry.<br />

MEPTEC - 9th Annual MEMS Technology<br />

Symposium - San Jose, CA - May 19, 2011<br />

This symposium will br<strong>in</strong>g together experts from<br />

many of these sectors to tell us not only where we<br />

are go<strong>in</strong>g <strong>in</strong> the future, but will also address<br />

specifi c areas that they will need help from<br />

exist<strong>in</strong>g technologies.<br />

ECTC - Lake Buena Vista, FL -<br />

May 31 - June 3, 2011<br />

The premier <strong>in</strong>ternational packag<strong>in</strong>g,<br />

components, and microelectronic systems<br />

technology conference, the Electronic<br />

Components and Technology Conference<br />

(ECTC) strives to offer our attendees an<br />

outstand<strong>in</strong>g array of packag<strong>in</strong>g technology<br />

<strong>in</strong>formation.<br />

GOLD PARTNERS<br />

MICRONEWS FINANCE<br />

Companies compos<strong>in</strong>g the Yole Index, May, 2011<br />

M for Million, MD for Billions<br />

Companies Sector Currency Symbol Price 06/05/11 Price 04/01/11 Price 01/04/10 Price 16/01/09 Price 01/01/07 jan 4 th - may 1 st<br />

ANALOG DEVICES Comp $ ADI.N 40,73 37,52 31,67 19,83 32,87 8,50%<br />

AFFYMETRIX INC Bio Rel Comp $ AFFX.OQ 6,05 4,66 5,9 3,46 23,06 29,80%<br />

AUSTRIAMICROSYSTEMS Comp CHF AMS.S 48,2 45,3 23,45 12,45 84,25 -6,40%<br />

CALIPER LIFE SCI Bio Rel Comp $ CALP.O 6,8 6,11 2,64 1,15 5,72 11,30%<br />

CREE INC Comp $ CREE.O 38,59 66,97 56,84 17,93 17,32 -42,40%<br />

CYPRESS SEMICONDUCTR Comp $ CY.O 21,14 18,24 10,58 4,83 16,87 15,80%<br />

ELMOS SEMICONDUCTOR Comp € ELGG.DE 10,73 9,81 6,85 2,05 7,58 9,30%<br />

HEWLETT PACKARD ( HP ) Comp $ HPQ.N 41,25 43,63 52,45 34,77 41 -5,40%<br />

INFINEON TECH ADS Comp € IFXGn.de 7,91 7,02 4,1 0,94 14,44 12,60%<br />

LAM RESEARCH CP Equipment $ LRCX.O 48,71 49,41 39,88 22,17 50,95 -1,40%<br />

MICRONAS Comp CHF MASN.S 7,96 12,95 4 3,75 26,92 -38,50%<br />

MELEXIS Comp € MLXS.BR 12,5 13,38 6,84 4,90 13,91 -6,50%<br />

MEMSIC Comp $ MEMS.0 3,36 3,21 3,34 1,60 1,7 4,60%<br />

MEMSCAP Comp € MEMS.PA 3,5 4,15 2,26 2,20 21,9 -15,60%<br />

MENTOR GRAPHICS Software $ MENT.O 14,46 11,96 9,25 5,17 18,37 20,90%<br />

NANOGATE Nano tech € N7GG.DE 18,5 15,65 21,9 8,80 34,5 18,20%<br />

NANOPHASE Nano tech $ NANX 1,27 1,26 0,84 0,97 4,9 1,00%<br />

NANOGEN Bio Rel Comp $ NGEN 0,01 0,1 0,2 0,20 1,87 0,00%<br />

OERLIKON Mat/equipt CHF OERL.S 7,1 5,34 4,66 7,40 84,95 33,90%<br />

OKMETIC Material € OKMI.BE 5,46 5,05 3,42 2,46 3,58 8,10%<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

CONSULTING<br />

PLAN OPTIK Material € P40G.DE 3,89 4,06 2,87 1,68 7,35 -4,10%<br />

PSIVIDA LIMITED Bio Rel Comp $ PSDV.OQ 4,12 5,02 3,69 0,99 1,95 -17,90%<br />

Q-CELLS Photovoltaic € QCEG.DE 2,61 2,49 11,39 21,40 34,07 4,80%<br />

RIBER Equipment € RIBE.PA 3,35 2,55 1,3 1,00 2,1 31,30%<br />

SAES GETTERS Materials € SAEI.MI 7,73 6,92 6,1 6,30 27,63 11,70%<br />

SUESS MICROTEC Equipment € SMHG.DE 11,73 9,59 4,4 1,37 6,95 37,80%<br />

SOITEC Material € SOIT.PA 10,44 8,51 10,77 2,92 27,72 22,60%<br />

SUNPOWER CORPORATION Photovoltaic $ SPWRA 21,34 13,63 23,95 33,62 37,17 56,50%<br />

STMICROELECTRONICS Comp € STM.PA 7,91 8,1 6,48 4,29 14,07 -2,30%<br />

PVA TEPLA Equipment € TPEG.DE 4,36 3,91 5,37 2,59 28,45 11,50%<br />

TESSERA Equipment $ TSRA.O 18,83 21,7 23,81 11,32 4,37 -13,20%<br />

TEXAS INSTRUMENTS Comp $ TXN.N 35,36 32,67 26,01 15,02 40,34 8,20%<br />

ULTRATECH INC Equipment $ UTEK.O 30,26 19,27 15,37 10,60 12,48 57,10%<br />

F<strong>in</strong>d more details on www.I-micronews.com<br />

Comp for components, Bio Comp for Bio related component, Nano tech for Nanotechnologies<br />

2


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

COWIN<br />

COWIN Marketplace - 14 th -16 th June 2011, Scandic Mar<strong>in</strong>a Congress <strong>in</strong> Hels<strong>in</strong>ki<br />

Come to COWIN Marketplace to know more about available technologies, on-go<strong>in</strong>g <strong>in</strong>novative projects and fund<strong>in</strong>g<br />

opportunities <strong>in</strong> smart systems. COWIN is a support action to optimize value creation from European collaborative<br />

research results <strong>in</strong> generat<strong>in</strong>g bus<strong>in</strong>ess opportunities.<br />

From Smart phones to smart <strong>in</strong>dustrial processes, the trend is set.<br />

M<strong>in</strong>iaturised smart systems are becom<strong>in</strong>g more and more key components<br />

<strong>in</strong> our private and professional lives. They enable better telecommunications,<br />

energy effi ciency, susta<strong>in</strong>able transport, fast and reliable medical diagnostics,<br />

breakthroughs <strong>in</strong> healthcare, <strong>in</strong>novative enterta<strong>in</strong>ment…<br />

Whatever the doma<strong>in</strong> of activity, the market is already ask<strong>in</strong>g for M<strong>in</strong>iaturised<br />

Smart Systems.<br />

To optimise your <strong>in</strong>novation process, jo<strong>in</strong> the European network and meet with<br />

future key partners. Take the chance to access available resources and most of<br />

all to start <strong>in</strong>teractions with the most suitable operational and fi nancial resources<br />

related to your needs.<br />

COWIN Marketplace will be composed of 3 events which participation is<br />

free of charge:<br />

• An <strong>in</strong>formation session on “F<strong>in</strong>anc<strong>in</strong>g major milestones from R&D to market"<br />

will gather representatives from the European Commission, from the European<br />

Technology Platform EPoSS, from the <strong>in</strong>vestors community and from<br />

EURIPIDES <strong>in</strong> order to provide the audience with key elements on support<br />

<strong>in</strong>itiatives all along the technology value cha<strong>in</strong>.<br />

14 th June 2011 from 15:00 to 17:30, Room FENNIA I<br />

• Personal contacts are essential for successful co-operations. COWIN is<br />

organis<strong>in</strong>g a matchmak<strong>in</strong>g event consist<strong>in</strong>g <strong>in</strong> <strong>in</strong>dividual meet<strong>in</strong>gs between<br />

technology providers, <strong>in</strong>tegrators and bus<strong>in</strong>ess partners <strong>in</strong> order to foster<br />

<strong>in</strong>novation and to discuss on concrete bus<strong>in</strong>ess opportunities. COWIN will give<br />

you the chance to optimise your meet<strong>in</strong>gs schedule accord<strong>in</strong>g to your needs.<br />

14 th -16 th June 2011, Room NORDIA<br />

• A posters exhibition is the actual core of COWIN Marketplace. In this common<br />

Euripides-COWIN area, <strong>in</strong>novative research results from FP6-FP7 projects but<br />

also on-go<strong>in</strong>g projects under the EURIPIDES programme will be given the fl oor<br />

to present themselves and to raise <strong>in</strong>terests among the audience for further<br />

partnerships. The poster presenters will be available for questions and<br />

discussions. Furthermore exhibitors will have the opportunity to br<strong>in</strong>g<br />

demonstrators to emphasise the impact of the posters.<br />

14 th -16 th June 2011, Room NORDIA<br />

to<br />

me<br />

About the Smart System Week<br />

The Smart System Week will take place at the Scandic Mar<strong>in</strong>a Congress <strong>in</strong><br />

Hels<strong>in</strong>ki from 14 th to 17 th June 2011. The EURIPIDES Cluster, <strong>in</strong> close cooperation<br />

with VTT and TEKES, will present its 5 th Annual Forum, highlight new trends <strong>in</strong><br />

Technology and Bus<strong>in</strong>ess and gather the Smart System Community with<br />

dedicated events aim<strong>in</strong>g at generat<strong>in</strong>g ideas for future bus<strong>in</strong>esses.<br />

A series of workshops will take place on the 14 th June:<br />

• The EPoSS Key Technologies Work<strong>in</strong>g Group will organise a practical workshop<br />

to elaborate and prepare expression of <strong>in</strong>terests (EOI) and project ideas.<br />

• The Eemeli Workshop, supported by TEKES and VTT, will focus on help<strong>in</strong>g<br />

SMEs to get access to Smart Systems Technologies as well as to network<br />

<strong>in</strong>ternationally and to learn to use European fund<strong>in</strong>g schemes <strong>in</strong> creat<strong>in</strong>g new<br />

competitive advantages.<br />

• Easy access to Microsystems production through contract manufactur<strong>in</strong>g<br />

services organised by VTT Memsfab. Purpose of the event is to promote<br />

<strong>in</strong>creas<strong>in</strong>g use of Microsystems, to bridge the gap from lab-to-fab and to offer<br />

an opportunity to meet foundries.<br />

Technical visits will be organised on 17 th June 2011:<br />

Two tours (tour 1: Nokia Research Center, Micronova or tour 2: VTI Technologies,<br />

Okmetic) will give an overview of Key F<strong>in</strong>nish research sites as well as <strong>in</strong>dustrial<br />

facilities.<br />

Mrs. Gérald<strong>in</strong>e Andrieux Gust<strong>in</strong><br />

Mr. Nicolas Gouze<br />

COWIN Coord<strong>in</strong>ator<br />

COWIN Communication<br />

c/o Yole Développement<br />

c/o VDI/VDE- Innovation + Technik<br />

andrieux@yole.fr<br />

nicolas.gouze@vdivde-it.de<br />

Tel. : +33 6 75 800 829 Tel.: +49 30 310078-209<br />

www.cow<strong>in</strong>4u.eu<br />

About COWIN<br />

COWIN is a support action launched under the 7 th framework Program for 3 years to strengthen the European competitiveness <strong>in</strong> m<strong>in</strong>iaturized smart systems.<br />

This <strong>in</strong>itiative is dedicated to the commercial exploitation of advanced technologies developed <strong>in</strong> the framework of European collaborative research projects.<br />

COWIN’s mission is to facilitate take-up of the advanced technologies worthy of <strong>in</strong>vestments, <strong>in</strong> order to capture <strong>in</strong>novation, w<strong>in</strong> new markets and make a profi t.<br />

A Smart System Week <strong>in</strong> Hels<strong>in</strong>ki for<br />

Creat<strong>in</strong>g Innovations and Bus<strong>in</strong>ess<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

3


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

CALL FOR PAPERS<br />

MEMS – Enter<strong>in</strong>g a New Growth Cycle!<br />

The SEMICON Europe 2011 is the perfect platform for all players <strong>in</strong> the MEMS/MST <strong>in</strong>dustry. The show will be <strong>in</strong> Dresden/<br />

Germany from 11 – 13 October.<br />

The development of the MEMS Market is hardly<br />

to be overlooked. With a 22 % growth <strong>in</strong> 2010,<br />

the MEMS and Sensor Market is back on track<br />

aga<strong>in</strong>. Accord<strong>in</strong>g to reliable prognoses this trend will<br />

further extend until 2015.<br />

The new growth stands on a solid basis and several<br />

reasons support that this may be a long-term<br />

development:<br />

• MEMS markets for consumer electronics and<br />

mobile phones will grow at an accelerated rate over<br />

the next 4 years, <strong>in</strong> particular revenue for handsets<br />

and slate tablets.<br />

• The soar<strong>in</strong>g demand for MEMS sensors from BRIC<br />

countries (Brasil, Russia, India and Ch<strong>in</strong>a) <strong>in</strong> all<br />

sectors from cars to <strong>in</strong>frastructure e.g. for smart<br />

meters and optical telecom is driv<strong>in</strong>g demand.<br />

• Sales of DLP chips (Digital Light Process<strong>in</strong>g) were<br />

aga<strong>in</strong> up <strong>in</strong> 2010.<br />

• Increas<strong>in</strong>g use of sensors <strong>in</strong> address<strong>in</strong>g critical<br />

areas like energy and ag<strong>in</strong>g population.<br />

Therefore, the relevance of the International<br />

MEMS/MST Industry Forum on the SEMICON<br />

Europa 2011 cannot be underestimated. The Forum<br />

takes focus on the key success factors of the new<br />

growth cycle:<br />

• An area of new <strong>in</strong>terest<strong>in</strong>g applications promotes<br />

new technologies and provides l<strong>in</strong>e utilization;<br />

• Successful management of distributed operations<br />

<strong>in</strong>clud<strong>in</strong>g foundries, with methodologies for steep<br />

learn<strong>in</strong>g curves, best system know-how and ever<br />

shorter time-to-revenue cycles;<br />

• Effi cient high volume test<strong>in</strong>g and quality assurance;<br />

• Innovative <strong>in</strong>tegration concepts for complex sensor<br />

systems.<br />

The MEMS applications will be the centre of<br />

attraction for many visitors: What will be their future<br />

usage <strong>in</strong> the automotive <strong>in</strong>dustry, biomedic<strong>in</strong>e and<br />

life science, consumer electronics, optical<br />

telecommunication and also <strong>in</strong> high-end areas like<br />

aeronautics and <strong>in</strong>dustrial manufactur<strong>in</strong>g?<br />

Additionally, the conference will cover all standard<br />

parts which are important for the day-to-day<br />

<strong>in</strong>dustrial production. The current leverage of the<br />

standardization, test<strong>in</strong>g methods and results as well<br />

as strategies for high added volume and emerg<strong>in</strong>g<br />

products will be <strong>in</strong> the focus dur<strong>in</strong>g the show.<br />

The range of the conference conta<strong>in</strong>s the know-how<br />

of technical processes and new materials for the<br />

MEMS <strong>in</strong> front-end, back-end and test<strong>in</strong>g. This<br />

technical part deals with 3D and TSV (through silicon<br />

via) processes. Different Chip and WLP (wafer level<br />

package) technologies are also part of the program.<br />

Another session deals with the MEMS application<br />

markets, the chances and risks but also with<br />

forecasts and outlook.<br />

For <strong>in</strong>formation on SEMICON Europa 2011,<br />

please visit www.semiconeuropa.org<br />

or contact Carlos Lee, per email clee@semi.org<br />

or per telephone: +32 2 6095334<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

4


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

INDUSTRY OUTLOOK<br />

“ Permanent Wafer Bond<strong>in</strong>g will be a key enabl<strong>in</strong>g technology for<br />

advanced semiconductor manufactur<strong>in</strong>g” says Yole Développement<br />

Yole Développement announces the publication of its technology study and market research report, Permanent Wafer<br />

Bonders Applications & Market Report.<br />

Historically developed for MEMS & SOI substrates, the wafer bond<strong>in</strong>g technology is today becom<strong>in</strong>g a key process<strong>in</strong>g<br />

technology for a wide range of applications: MEMS, CMOS Image Sensors, LEDs, Power Devices, RF and Advanced<br />

Packag<strong>in</strong>g. The wafer bond<strong>in</strong>g market is a very complex one cross<strong>in</strong>g different wafer sizes (from 2’’ to 12’’), different<br />

applications and different bond<strong>in</strong>g technologies.<br />

Market overview<br />

Wafer bond<strong>in</strong>g is usually defi ned as a process that<br />

temporarily or permanently jo<strong>in</strong>s two wafers or<br />

substrates us<strong>in</strong>g a suitable process. Historically<br />

developed for MEMS and then SOI wafers, wafer<br />

bond<strong>in</strong>g technology has shifted to non-ma<strong>in</strong>stream<br />

IC applications over the last years. Our report aims<br />

at analyz<strong>in</strong>g the market perspectives and technical<br />

trends for permanent bond<strong>in</strong>g.<br />

“MEMS have been the fi rst application where wafer<br />

bonders have been massively used (the wafer<br />

bond<strong>in</strong>g step is mostly used to protect the MEMS<br />

sensitive element). And CMOS Image Sensors is<br />

also a very large market for wafer bonders”, expla<strong>in</strong>ed<br />

Dr Eric Mounier, Project Manager at Yole<br />

Développement.<br />

But besides MEMS and CIS, wafer bonder can be<br />

also used for LEDs or Power Devices. Indeed, <strong>in</strong> a<br />

typical LED active region, spontaneous emission<br />

scatters photons <strong>in</strong> all directions. If the substrate<br />

material has a smaller band gap than the active<br />

region, approximately half of the light is absorbed <strong>in</strong><br />

the substrate; significantly reduc<strong>in</strong>g device<br />

performance. So, one of the manufactur<strong>in</strong>g solutions<br />

for photon loss <strong>in</strong>volves bond<strong>in</strong>g a wafer conta<strong>in</strong><strong>in</strong>g<br />

an array of devices to another wafer that provides<br />

both a refl ective surface for maximum light extraction<br />

and a heat s<strong>in</strong>k for thermal management. And of<br />

course, over the 5 past years, much attention has<br />

been given to this technology for 3D <strong>in</strong>tegration of<br />

memories for example.<br />

Technology challenges<br />

For MEMS, there is today a shift from Glass Frit for<br />

eutectic/metal-based bond<strong>in</strong>g ma<strong>in</strong>ly to <strong>in</strong>crease<br />

real estate by smaller bond frames. Metal direct<br />

bond<strong>in</strong>g also gives good hermeticity and mechanical<br />

stability for many MEMS applications. For example,<br />

Nasiri process is us<strong>in</strong>g eutectic bond<strong>in</strong>g of the MEMS<br />

directly on the alum<strong>in</strong>um layer of the CMOS wafer.<br />

This leads to smaller package footpr<strong>in</strong>ts & package<br />

heights. STMicroelectronics’ latest 3-axis<br />

accelerometer also shows a different seal<strong>in</strong>g<br />

technique compared to what is usually done: gold<br />

eutectic seal<strong>in</strong>g allows a dramatic die size reduction.<br />

For CMOS Image sensors, the advent of the BSI<br />

(Back Side Illum<strong>in</strong>ation) technology has raised a<br />

competition between Molecular Bond<strong>in</strong>g and<br />

adhesive bond<strong>in</strong>g. Here, cost and fi nal application<br />

will drive the technology fi nal choice.<br />

Yole Développement has estimated the wafer bonder<br />

to have big market growth for the next year. The<br />

growth will be driven small size wafer for LEDs and<br />

12” wafer for 3D stack<strong>in</strong>g and CIS.<br />

Yole Développement’s report analyzes <strong>in</strong> details the<br />

technical & economical evolution of the permanent<br />

wafer bond<strong>in</strong>g process. It gives, for example, 2010-<br />

2016 market forecasts for permanent bond<strong>in</strong>g,<br />

number of equipment, an overview of the different<br />

bond<strong>in</strong>g approaches and equipment players market<br />

shares.<br />

It describes the applications for wafer bond<strong>in</strong>g with<br />

ma<strong>in</strong> characteristics, challenges and technical<br />

trends.<br />

For more <strong>in</strong>formation about Yole Développement reports,<br />

please contact D. Jourdan (jourdan@yole.fr)<br />

Permanent Wafer Bond<strong>in</strong>g Applications<br />

(Source: Yole Développement, May 2011)<br />

Accelerometers<br />

1st level packag<strong>in</strong>g<br />

Microbolometers<br />

Gyros<br />

SGOI<br />

SOQ<br />

Optical MEMS<br />

Microphones<br />

Pressure sensor<br />

Microfluidics<br />

IGBTs<br />

Resonators<br />

RF MEMS<br />

Stress isolation/<br />

device<br />

manufactur<strong>in</strong>g<br />

Th<strong>in</strong> films LEDs<br />

Power<br />

MEMS<br />

LEDs<br />

Wafer<br />

Bond<strong>in</strong>g<br />

Advanced<br />

substrates<br />

RF<br />

Devices<br />

Advanced<br />

Packag<strong>in</strong>g<br />

CMOS<br />

Image<br />

Sensors<br />

SOI<br />

GOI<br />

Encapsulation<br />

Interposers<br />

FO WLP<br />

Microbumps<br />

MMIC<br />

3D ICs<br />

5Copyrights © Yole Développement SA. All rights reserved - Recycled paper


Copyrights © Yole Développement SA. All rights reserved.<br />

Copyrights © Yole Développement SA. All rights reserved.<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

MAY 2011 issue n°112<br />

ONLINE EVENT<br />

Register for a live webcast today:<br />

Revolution <strong>in</strong> consumer motion sensors<br />

Jo<strong>in</strong> Yole Développement’s expert, Laurent Rob<strong>in</strong>, on<br />

Tuesday, 31 st of May at 5.30 pm CET to learn about motion<br />

sensors.<br />

Visit our website www.i-<strong>Micronews</strong>.com, webcast section,<br />

to register.<br />

The <strong>in</strong>ertial sensor market for consumer electronics is grow<strong>in</strong>g very quickly<br />

due the fast adoption of accelerometers, gyroscopes and magnetometers<br />

<strong>in</strong> mobile phones, tablets, game stations, laptops…. Indeed 20.3% annual<br />

growth is expected: from $847M <strong>in</strong> 2009, the motion sensor market will reach<br />

$2.56B <strong>in</strong> 2015! The MEMS accelerometer market will show very nice bus<strong>in</strong>ess<br />

opportunities <strong>in</strong> the com<strong>in</strong>g years. Moreover this market will be strategic because<br />

many applications are expected to rely on 3-axis accelerometer + 3-axis gyroscope<br />

<strong>in</strong> a s<strong>in</strong>gle package with<strong>in</strong> 2015. There is thus a strong synergy between<br />

accelerometer and gyroscope technologies and players…<br />

•<br />

•<br />

•<br />

•<br />

FREE OF CHARGE WEBCAST<br />

© 2011 • 6<br />

2009-2015 Market Overview<br />

Overview<br />

The market for motion sensors is grow<strong>in</strong>g to<br />

more than $2.5B <strong>in</strong> 2015, correspond<strong>in</strong>g to<br />

4.5B sensor packages<br />

– One sensor package can conta<strong>in</strong> several sensors<br />

(combo sensors) market is actually 5.18B sens<strong>in</strong>g<br />

functions <strong>in</strong> 2015<br />

– 15.7% 2009-2015 CAGR <strong>in</strong> value, 24.4% <strong>in</strong> volume<br />

Mobile phone and gam<strong>in</strong>g are the biggest CE<br />

markets for motion sensors and combo<br />

sensors<br />

Remote control application will emerge<br />

slowly, with gam<strong>in</strong>g functions as a key feature<br />

Very high potential <strong>in</strong> the sports area, but it<br />

will take time to emerge, and it is a collection<br />

of plenty of niche applications<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

MEMS Gyroscopes for Mobile Phones<br />

What’s next for gyropscopes after iPhone 4?<br />

• Now that appropriate Android drivers seem available, we start to see that the major<br />

handset makers release few models with gyroscopes<br />

Samsung Galaxy<br />

• Samsung Galaxy S Pro: <strong>first</strong> Android phone with a gyroscope?<br />

S Pro<br />

– Rumors said that this phone <strong>in</strong>tegrates a gyroscope. But it has not been confirmed<br />

– Also features an accelerometer, AGPS, compass<br />

– Named Epic 4G <strong>in</strong> USA, released by Spr<strong>in</strong>t<br />

• Released beg<strong>in</strong>n<strong>in</strong>g 2011, the Google Nexus S <strong>in</strong>tegrates a gyro<br />

– This confirms the adoption of gyroscopes <strong>in</strong> high-end smartphones<br />

• LG Optimus Black: <strong>first</strong> handset design w<strong>in</strong> for InvenSense!<br />

Google Nexus S<br />

– This smartphone will <strong>in</strong>tegrate InvenSense’s ITG-3200 3 axis MEMS gyroscope for (manufactured by<br />

nice user <strong>in</strong>terface functions<br />

Samsung)<br />

– This design-w<strong>in</strong> from InvenSense on an Android phone shows that ST can expect<br />

strong competition<br />

• Other mobile phone makers:<br />

– HTC has revealed that they will release a gyroscope-equipped smartphone <strong>in</strong> mid<br />

2010<br />

LG Optimus<br />

– June 2010: the director of Motorola mobile division has announced that they are<br />

Black<br />

will<strong>in</strong>g to release a smartphone with a gyro by the end of 2010. But such a product<br />

has not been seen on the market yet.<br />

– Sony Ericsson<br />

© 2011 – • 11 <br />

Therefore Yole Developpement is pleased to organize a webcast on this topic. The<br />

webcast entitled “Revolution <strong>in</strong> Consumer Motion Sensors” will be presented by<br />

Laurent Rob<strong>in</strong>, Market & Technology Analyst, on Tuesday, 31 st of May at 5.30 pm CET.<br />

Register NOW on I-<strong>Micronews</strong>.com, webcast section.<br />

For more <strong>in</strong>formation about the webcast, please contact David Jourdan (jourdan@yole.fr)<br />

Organized by<br />

Speaker:<br />

Laurent Rob<strong>in</strong> is <strong>in</strong> charge of the MEMS & Sensors market<br />

research at Yole Developpement. He previously worked<br />

at image sensor company e2v Technologies (Grenoble,<br />

France) and at EM Microelectronics (Switzerland). He<br />

holds a Physics Eng<strong>in</strong>eer<strong>in</strong>g degree from the National<br />

Institute of Applied Sciences <strong>in</strong> Toulouse. He was also<br />

granted a Master Degree <strong>in</strong> Technology & Innovation<br />

Management from EM Lyon Bus<strong>in</strong>ess School, France.<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

Hosted by<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MEMS MARKET BRIEFING<br />

AT TRANSDUCERS 2011<br />

FREE ENTRANCE<br />

Mobile phone<br />

& consumer<br />

electronics are driv<strong>in</strong>g<br />

the growth of the<br />

MEMS bus<strong>in</strong>ess...<br />

Evolutions <strong>in</strong> the microphone<br />

and motion sensor market<br />

June 7, at Transducers 2011<br />

At 6.30 PM<br />

6.30 PM - MEMS market forecasts :<br />

where is the MEMS <strong>in</strong>dustry head<strong>in</strong>g?<br />

Jean-Christophe Eloy,<br />

President & CEO, Yole Développement<br />

7.00 PM - MEMS microphone market:<br />

evolution of bus<strong>in</strong>ess models and supply cha<strong>in</strong><br />

Wenb<strong>in</strong> D<strong>in</strong>g,<br />

MEMS Market & Technology Analyst, Yole Développement<br />

7.30 PM - Revolution <strong>in</strong> consumer motion sensors<br />

Jean-Christophe Eloy,<br />

President & CEO, Yole Développement<br />

8.00 PM - Network<strong>in</strong>g cocktail<br />

Y O L E D É V E L O P P E M E N T<br />

For more <strong>in</strong>formation,<br />

please contact<br />

Sandr<strong>in</strong>e Leroy<br />

(leroy@yole.fr)<br />

6


7<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

It’s not who you know today.<br />

It’s who you’re go<strong>in</strong>g to need to know tomorrow.<br />

The world of <strong>in</strong>ertial devices is <strong>in</strong> a rapid state of change. Value is shift<strong>in</strong>g.<br />

Players are chang<strong>in</strong>g. The entire <strong>in</strong>dustry of motion is <strong>in</strong> motion. While we all<br />

know the current players, our growth depends on meet<strong>in</strong>g and engag<strong>in</strong>g the<br />

emerg<strong>in</strong>g <strong>in</strong>novators.<br />

The world leader <strong>in</strong> MEMS technology <strong>in</strong>formation, Yole Développement, is harness<strong>in</strong>g<br />

the power and effi ciency of an excit<strong>in</strong>g new network<strong>in</strong>g and collaboration<br />

event. Not another tradeshow or conference, the MEMS <strong>in</strong> Motion Collaboration<br />

Summit promises the freedom to meet, learn, talk, and ultimately collaborate <strong>in</strong> a<br />

time-effi cient and casual environment.<br />

The Yole team will br<strong>in</strong>g together <strong>in</strong>dustry leaders for this fi rst-of-a-k<strong>in</strong>d, two-day<br />

event <strong>in</strong> Palm Spr<strong>in</strong>gs. Qualifi ed attendees will enjoy exclusive Yole plenary<br />

sessions; small, facilitated roundtable discussions; and hours of small group and<br />

one-on-one discussion activities.<br />

If your bus<strong>in</strong>ess depends on—or will depend on—<strong>in</strong>ertial devices, the MEMS <strong>in</strong><br />

Motion Collaboration Summit is perfect for you.<br />

Shape the future of <strong>in</strong>ertial devices at the<br />

MEMS <strong>in</strong> Motion Collaboration Summit<br />

OCTOBER 12-13, 2011<br />

Palm Spr<strong>in</strong>gs, CA USA<br />

Information@MEMS<strong>in</strong>Motion.com<br />

www.MEMS<strong>in</strong>Motion.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MEMS<br />

<strong>Microvision</strong> <strong>establishes</strong> <strong>first</strong> <strong>global</strong> R&D <strong>center</strong> <strong>in</strong> S<strong>in</strong>gapore<br />

From page 1<br />

By collaborat<strong>in</strong>g with NTU, MicroVision aims<br />

to leverage the university's strength and<br />

expertise <strong>in</strong> Eng<strong>in</strong>eer<strong>in</strong>g, Microelectronics<br />

and Materials Science to conduct jo<strong>in</strong>t research and<br />

development with faculty and students.<br />

MicroVision's dedicated R&D <strong>center</strong> <strong>in</strong>cludes a<br />

customized laboratory at NTU's Innovation Centre.<br />

The company will work directly with NTU's School of<br />

Electrical and Electronic Eng<strong>in</strong>eer<strong>in</strong>g and the<br />

Division of Physics and Applied Physics.<br />

NTU has established strong <strong>in</strong>dustry partners<br />

<strong>in</strong>clud<strong>in</strong>g Rolls-Royce, Robert Bosch, Thales, and<br />

Toray. Like MicroVision, these lead<strong>in</strong>g companies<br />

chose to set up research facilities at NTU, where they<br />

collaboratively work with NTU faculty and students<br />

to pursue their respective research <strong>in</strong>terests.<br />

www.microvision.com<br />

DelfMEMS successfully delivered custom RF MEMS samples to NTT DOCOMO<br />

DelfMEMS has provided arrays of custom MEMS ohmic switches to enable tunability <strong>in</strong>to Radio-Frequency front-end<br />

modules -FEM- for mobile applications.<br />

Voltage, size, losses, isolation, ultra-fast<br />

switch<strong>in</strong>g time and power handl<strong>in</strong>g will be<br />

evaluated by the <strong>in</strong>novative telecom operator<br />

accord<strong>in</strong>g to the requested specifications until 6 GHz.<br />

DelfMEMS is sett<strong>in</strong>g-up an open technology platform<br />

to propose a new <strong>in</strong>tegrated micro-mechanical<br />

build<strong>in</strong>g block that is based on a strong, totally new<br />

IP portfolio that solves past issues of RF MEMS ohmic<br />

switches. MEMS switch is considered as the optimum<br />

RF switch<strong>in</strong>g technology that drastically decreases<br />

power consumption and bill of material by m<strong>in</strong>imiz<strong>in</strong>g<br />

losses between the antenna and active devices of a<br />

FEM.<br />

www.delfmems.com<br />

Lemoptix MEMS micromirrors replace galvanometer and rotat<strong>in</strong>g mirrors<br />

Optical MEMS scann<strong>in</strong>g micromirrors much smaller, much faster, much more robust and much less power<br />

consum<strong>in</strong>g than conventional optical scann<strong>in</strong>g systems.<br />

Lemoptix silicon-based, magnetically actuated<br />

MEMS micromirror technologies are best <strong>in</strong><br />

class replacement solutions to traditional<br />

galvanometer and rotat<strong>in</strong>g mirrors, br<strong>in</strong>g<strong>in</strong>g<br />

outstand<strong>in</strong>g performance and space reduction.<br />

Respond<strong>in</strong>g to <strong>in</strong>dustry requests to significantly<br />

reduce size, power consumption and <strong>in</strong>creased<br />

performance of micromirror devices, Lemoptix has<br />

developed a bottom-up approach by us<strong>in</strong>g semiconductor-like<br />

equipment to build micromirrors with<br />

actuation based on magnetic and heat-dissipat<strong>in</strong>g<br />

pr<strong>in</strong>ciples <strong>in</strong>stead of gear<strong>in</strong>gs.<br />

Lemoptix LSCAN laser scann<strong>in</strong>g micromirrors are<br />

<strong>in</strong>tegrated by OEM customers <strong>in</strong>to a number of<br />

immediately available applications like optical<br />

spectrometers, laser range f<strong>in</strong>ders and microscopes,<br />

enhanc<strong>in</strong>g performances and enabl<strong>in</strong>g the<br />

development of smaller, higher resolution and lower<br />

cost products. Lemoptix’ resonant and static<br />

scann<strong>in</strong>g micromirrors are designed to rotate and<br />

deflect light and can be used <strong>in</strong> a myriad of optical<br />

applications due to the unique comb<strong>in</strong>ation of<br />

performance and size.<br />

www.optoiq.com<br />

LSCAN-F series (Resonant) (Courtesy of Lemoptix)<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

Okmetic <strong>in</strong>creases SOI wafer production capacity <strong>in</strong> Vantaa and specifies<br />

long-term f<strong>in</strong>ancial objectives<br />

Okmetic's board of directors has approved plans to <strong>in</strong>crease the group's silicon-on-<strong>in</strong>sulator (SOI) wafer production<br />

capacity by extend<strong>in</strong>g the Vantaa plant.<br />

The around 30 million euro <strong>in</strong>vestment <strong>in</strong>cludes<br />

the plant extension and different k<strong>in</strong>ds of<br />

production equipment. This <strong>in</strong>vestment,<br />

together with the on-go<strong>in</strong>g SOI equipment<br />

<strong>in</strong>vestments, more than triples the Vantaa plant's<br />

current SOI wafer production capacity. Along with the<br />

grow<strong>in</strong>g production amounts, new equipment and<br />

process development, improved productivity is be<strong>in</strong>g<br />

aimed at. At the same time, improvement of SOI<br />

wafers' performance cont<strong>in</strong>ues <strong>in</strong> order to ensure<br />

customers' competitiveness.<br />

The <strong>in</strong>vestment will be carried out ma<strong>in</strong>ly <strong>in</strong> 2011-<br />

2013. The build<strong>in</strong>g of the Vantaa plant extension will<br />

start <strong>in</strong> autumn 2011. The surface area of the<br />

extension is 2,420 m2, approximately a quarter of<br />

which is for clean room facilities. The extension is<br />

due to be complete <strong>in</strong> the end of 2012, after which it<br />

will be taken <strong>in</strong>to production use <strong>in</strong> stages, follow<strong>in</strong>g<br />

the growth of the market demand.<br />

The aim is that the <strong>in</strong>vestment will be covered ma<strong>in</strong>ly<br />

with cash flow from operations, and no need for<br />

significant loan f<strong>in</strong>anc<strong>in</strong>g is foreseeable.<br />

SOI wafers are used for demand<strong>in</strong>g MEMS sensors<br />

and HV applications whose markets have <strong>in</strong>creased<br />

year by year. It is estimated that the markets cont<strong>in</strong>ue<br />

to grow as automotive electronics, consumer<br />

electronics as well as <strong>in</strong>dustrial process control<br />

<strong>in</strong>crease. Sensor applications <strong>in</strong>crease especially <strong>in</strong><br />

consumer products such as smart phones, cameras,<br />

game consoles and <strong>in</strong> other portable devices.<br />

This newly made <strong>in</strong>vestment decision supports<br />

Okmetic's long-term strategy and growth objectives,<br />

strengthens company's market leadership as the<br />

supplier of demand<strong>in</strong>g sensor wafers and enables<br />

<strong>in</strong>crease of market share <strong>in</strong> SOI wafers.<br />

www.reuters.com<br />

8


9<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MEMS<br />

New MEMS microphones from<br />

STMicroelectronics enhance audio<br />

experience <strong>in</strong> mobile phones and<br />

portable computers<br />

STMicroelectronics <strong>in</strong>troduced two new digital MEMS<br />

microphones.<br />

October 2 to 5, 2011<br />

MP34DB01 and MP45DT02 microphones (Courtesy of STMicroelectronics)<br />

Comb<strong>in</strong><strong>in</strong>g superior sound quality with robustness and reliability at reduced<br />

size and cost, ST’s MP34DB01 and MP45DT02 microphones enable<br />

enhanced audio experience <strong>in</strong> mobile phones and portable computers, as<br />

well as <strong>in</strong> many other exist<strong>in</strong>g and emerg<strong>in</strong>g applications with a voice <strong>in</strong>put.<br />

ST’s MEMS microphones use best-<strong>in</strong>-class acoustic sensor technology jo<strong>in</strong>tly<br />

developed with OMRON that is <strong>in</strong>herently less susceptible to mechanical vibration,<br />

temperature variations and electromagnetic <strong>in</strong>terference, while provid<strong>in</strong>g high-fidelity<br />

reproduction of audio signals. Integrat<strong>in</strong>g ST’s electronic control circuit and OMRON’s<br />

micro-mach<strong>in</strong>ed sensor <strong>in</strong> a s<strong>in</strong>gle package, the microphones deliver superb audio<br />

performance at lower power consumption than traditional condenser (ECM)<br />

microphones. This optimized power consumption ensures longer battery life <strong>in</strong><br />

portable devices for an extended user experience.<br />

In addition to the size, robustness and energy economy advantages over ECM<br />

microphones, MEMS microphones enable dramatic advancements <strong>in</strong> sound quality,<br />

realized by <strong>in</strong>corporat<strong>in</strong>g multiple microphones <strong>in</strong> one device. Such microphone<br />

arrays, facilitated by the small form factor, superior sensitivity match<strong>in</strong>g and frequency<br />

response of ST’s microphones, enable the implementation of active noise and echo<br />

cancell<strong>in</strong>g, as well as beam-form<strong>in</strong>g, a sound-process<strong>in</strong>g technology that helps<br />

isolate a sound and its location. These features are valuable with the <strong>in</strong>creas<strong>in</strong>g use<br />

of cell phones and other devices <strong>in</strong> noisy and uncontrollable environments.<br />

Another important factor <strong>in</strong> multiple-microphone applications is the high temperature<br />

stability of MEMS microphones after reflow that ensures ample flexibility <strong>in</strong> plac<strong>in</strong>g<br />

the auxiliary microphones, <strong>in</strong>clud<strong>in</strong>g <strong>in</strong> locations with higher temperature excursions.<br />

ST’s MP34DB01 microphone is the only device <strong>in</strong> the market with real high-fidelity<br />

audio bandwidth, deliver<strong>in</strong>g flat frequency response <strong>in</strong> the full audio band of 20–<br />

20,000 Hz, coupled with an unparalleled signal-to-noise ratio (62 dB) and powersupply<br />

noise rejection (70 dB).<br />

Housed <strong>in</strong>side an ultra-small 3x4x1 mm package, the microphone has been<br />

specifically designed for mobile phones, with the acoustic port hole placed on the<br />

bottom of the package. This layout enables phone manufacturers to mount the<br />

microphone on the backside of the cell-phone pr<strong>in</strong>ted circuit board for slimmer<br />

designs and still obta<strong>in</strong> a short acoustic path from the environment to the microphone.<br />

The MP34DB01 has already been qualified by top-tier cell-phone makers and is now<br />

<strong>in</strong> mass production.<br />

The other addition to ST’s MEMS microphone family, the MP45DT02, is a top-port<br />

3.76 x 4.72 x 1.25mm device that ideally suits the size and sound-<strong>in</strong>let position<br />

requirements of laptops and tablets. The microphone provides an excellent signalto-noise<br />

ratio (58 dB) and superior frequency response to alternatives for that market.<br />

www.st.com/mems<br />

Fairmont Chateau<br />

Lake Louise<br />

Lake Louise,<br />

Alberta, Canada<br />

wave2011.com<br />

Hosted By<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MEMS<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

Dutch company SolMateS enables next<br />

generations MEMS products<br />

SolMateS receives a three million dollar <strong>in</strong>vestment for the f<strong>in</strong>al<br />

development phase of their piezoelectric deposition mach<strong>in</strong>e.<br />

On the 27 th of April 2011, SolMateS received a substantial <strong>in</strong>vestment from<br />

private equity funds Twente Technology Fund and Participatiemaatschappij<br />

Oost Nederland. SolMateS will use the <strong>in</strong>vestment to accelerate product<br />

development and <strong>in</strong>ternational expansion for its unique production system.<br />

Piezoelectric layers are to be used <strong>in</strong><br />

all k<strong>in</strong>ds of m<strong>in</strong>iature systems were<br />

precise actuation is needed, for<br />

<strong>in</strong>stance <strong>in</strong> small motors, RF MEMS<br />

components or micro pumps. Currently<br />

those layers are deposited by<br />

notoriously unreliable and costly wet<br />

process<strong>in</strong>g. Price and quality are not<br />

meet<strong>in</strong>g the high volume electronic<br />

<strong>in</strong>dustry’s standards. SolMateS<br />

technology is developed at the<br />

University of Twente, and is the most<br />

advanced manufactur<strong>in</strong>g solution<br />

Wafer deposited with Piezo material and<br />

top electrodes (Courtesy of SolMateS)<br />

currently available to deposit piezoelectric th<strong>in</strong> films. It marks a whole new era of<br />

MEMS and will be used to create essential components for the next-generation mobile<br />

electronics, th<strong>in</strong> film actuators and medical devices. SolMateS <strong>in</strong>troduces the<br />

PiezoFlare 1200. The PiezoFlare 1200 is an automated deposition system for PZT<br />

th<strong>in</strong> films on 6" or 8" wafers, based on pulsed laser deposition. It offers high-yield piezo<br />

performance and flexibility for customized PZT compositions. The technology enables<br />

for the <strong>first</strong> time high volume reliable production capability for PZT th<strong>in</strong> film deposition.<br />

www.solmates.nl<br />

ULIS <strong>in</strong>troduces Pico640, a new VGA<br />

17-micron uncooled <strong>in</strong>frared imag<strong>in</strong>g<br />

sensor with enhanced factor of merit<br />

Factor of merit, a relative measure of thermal sensor sensitivity<br />

aga<strong>in</strong>st response rate, will allow camera makers to see<br />

how well Pico640E’s optimum performance compares to<br />

other uncooled IR imag<strong>in</strong>g sensors on the market.<br />

ULIS announced that it will launch Pico640E, a new VGA 640 x 480<br />

17-micron IR imag<strong>in</strong>g sensor that offers new advantages <strong>in</strong> size,<br />

performance and factor of merit. It responds to needs from camera<br />

manufacturers and other imag<strong>in</strong>g-system designers for large format, small-form<br />

factor, uncooled IR sensors that optimize the trade-off between performance and<br />

sensor response speed. Pico640E is a high-resolution (more than 300,000 pixels)<br />

IR imag<strong>in</strong>g sensor that comes <strong>in</strong> a small footpr<strong>in</strong>t (24.13 x 24.13 x 5.57mm). In<br />

tests, it has demonstrated a high response speed with a thermal time constant of<br />

8.8 ms and a thermal resolution less than 45 mK. This translates <strong>in</strong>to a uniform<br />

pixel factor of merit (400 mK.ms), mean<strong>in</strong>g Pico640E compares very favorably<br />

with other IR products <strong>in</strong> its category. The versatility of its high-quality, compact<br />

design means that it can perform long-range detection up to approximately 2km,<br />

depend<strong>in</strong>g on the target, as well as detect fast-mov<strong>in</strong>g objects. These performance<br />

advantages make Pico640E well adapted for military applications, as well as<br />

thermography, predictive ma<strong>in</strong>tenance and 24/7 camera surveillance.<br />

The performance Pico640E achieves is also a plus for image-fusion applications,<br />

which use both visible and IR images. Visible sensors have a much faster response<br />

rate than IR sensors, so there is often a time lag between visible and IR images<br />

when the camera is pann<strong>in</strong>g. Due to Pico640E’s fast response rate, it m<strong>in</strong>imizes<br />

the delay between visible and IR images when they are superimposed, thereby<br />

improv<strong>in</strong>g overall image quality.<br />

www.ulis-ir.com<br />

Key Enabl<strong>in</strong>g<br />

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10


11<br />

MAY 2011 issue n°112<br />

MEPTEC PRESENTS<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MEMS - DRIVING INNOVATION<br />

Exist<strong>in</strong>g Technologies Enable Future Innovations<br />

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Topics will <strong>in</strong>clude:<br />

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High-End Manufactur<strong>in</strong>g Equipment and Techniques<br />

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Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

MICROFLUIDICS<br />

Multiple emulsion droplet design by Sichuan University<br />

Scientists <strong>in</strong> Ch<strong>in</strong>a have developed a device that can control the production of multiple emulsion systems.<br />

This system could be used to encapsulate<br />

<strong>in</strong>compatible drug <strong>in</strong>gredients and to design<br />

multi-compartment materials, they say.<br />

As the oil droplets move through the system, they<br />

merge <strong>in</strong> the ma<strong>in</strong> channel to form the multi-component<br />

emulsions.<br />

Liang-Y<strong>in</strong> Chu at Sichuan University and colleagues<br />

have designed a microfluidic device capable of<br />

produc<strong>in</strong>g multi-compartment multiple emulsions.<br />

The team tested their system us<strong>in</strong>g different coloured<br />

oil droplets <strong>in</strong> water. The device - a droplet maker,<br />

connector and liquid extractor - can be arranged <strong>in</strong><br />

different comb<strong>in</strong>ations to generate different emulsions.<br />

The team now <strong>in</strong>tends to explore the full potential of<br />

their device and promote its application <strong>in</strong> different<br />

areas.<br />

esraa-chemist.blogspot.com<br />

Optical micrographs of monodisperse sextuple<br />

(Courtesy of Sichuan University)<br />

A*STAR microfluidic chip for quick on-site diagnosis of <strong>in</strong>fectious diseases<br />

The control of <strong>in</strong>fectious diseases such as the 2009 H1N1 pandemic <strong>in</strong>fluenza h<strong>in</strong>ges on handy analytical tools<br />

that can rapidly and accurately identify <strong>in</strong>fected patients at the doctor's office or at an airport.<br />

L<strong>in</strong>us Tzu-Hsiang Kao and co-workers at the<br />

A*STAR Institute of Microelectronics and the<br />

Genome Institute of S<strong>in</strong>gapore have now<br />

developed a silicon-based microfluidic system that is<br />

able to sense and differentiate the H1N1 virus from<br />

other seasonal <strong>in</strong>fluenza stra<strong>in</strong>s <strong>in</strong> ultrasmall<br />

specimens.<br />

The detection and characterization of viral stra<strong>in</strong>s is<br />

now rout<strong>in</strong>ely performed us<strong>in</strong>g an assay method called<br />

real-time reverse transcription polymerase cha<strong>in</strong><br />

reaction (RT-PCR). Kao's team, however, was able to<br />

<strong>in</strong>tegrate the PCR function <strong>in</strong>to a compact two-module<br />

microfluidic chip us<strong>in</strong>g standard semiconductor<br />

technology.<br />

Because untreated <strong>in</strong>fluenza samples usually conta<strong>in</strong><br />

m<strong>in</strong>ute amounts of viral RNA mixed with other nucleic<br />

acids and prote<strong>in</strong>s, the researchers designed an 'onchip'<br />

PCR module that amplifies target sequences for<br />

both H1N1 and seasonal viruses at the same time.<br />

The key to their compact screen<strong>in</strong>g technology,<br />

however, is the silicon-nanowire sens<strong>in</strong>g module used<br />

for virus identification. The nanowires <strong>in</strong> the module<br />

are modified with nucleic acid-conta<strong>in</strong><strong>in</strong>g polymers<br />

that specifically b<strong>in</strong>d the target DNA, which results <strong>in</strong><br />

a change <strong>in</strong> electrical resistance <strong>in</strong> proportion to the<br />

concentration of target DNA present <strong>in</strong> the sample.<br />

The team fabricated the PCR module, which <strong>in</strong>cludes<br />

a reaction chamber connected to small alum<strong>in</strong>um<br />

heaters and temperature sensors through t<strong>in</strong>y<br />

channels, directly <strong>in</strong>to a silicon chip us<strong>in</strong>g an etch<strong>in</strong>g<br />

technique. They then constructed the silicon<br />

nanowires by optical lithography and f<strong>in</strong>ally<br />

immobilized the nucleic acid-conta<strong>in</strong><strong>in</strong>g polymers.<br />

Experiments revealed that the small size of the PCR<br />

chamber gave it a uniform temperature distribution<br />

(see image), provid<strong>in</strong>g an ideal environment for<br />

efficient RNA amplification. The PCR module also<br />

responded much faster to heat<strong>in</strong>g/cool<strong>in</strong>g cycles than<br />

standard <strong>in</strong>struments because of the small sample<br />

volume—lead<strong>in</strong>g to quicker diagnoses.<br />

The team is currently plann<strong>in</strong>g to improve the sample<br />

extraction module.<br />

Photograph of the PCR microfluidic chip<br />

(Courtesy of A*STAR).<br />

www.a-star.edu.sg<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

University of Ill<strong>in</strong>ois has developed a low-cost sensor for bacterial <strong>in</strong>fections<br />

Bacterial <strong>in</strong>fections really st<strong>in</strong>k. And that could be the key to a fast diagnosis.<br />

Researchers have demonstrated a quick,<br />

simple method to identify <strong>in</strong>fectious bacteria<br />

by smell us<strong>in</strong>g a low-cost array of pr<strong>in</strong>ted<br />

pigments as a chemical sensor. Led by University of<br />

Ill<strong>in</strong>ois chemistry professor Ken Suslick, the team<br />

published its results <strong>in</strong> the Journal of the American<br />

Chemical Society.<br />

While there has been some <strong>in</strong>terest <strong>in</strong> us<strong>in</strong>g<br />

sophisticated spectroscopy or genetic methods for<br />

cl<strong>in</strong>ical diagnosis, Suslick's group focused on another<br />

dist<strong>in</strong>ctive characteristic: smell. Many experienced<br />

microbiologists can identify bacteria based on their<br />

aroma. Bacteria emit a complex mixture of chemicals<br />

as by-products of their metabolism. Each species of<br />

bacteria produces its own unique blend of gases, and<br />

even differ<strong>in</strong>g stra<strong>in</strong>s of the same species will have an<br />

aromatic "f<strong>in</strong>gerpr<strong>in</strong>t."<br />

Suslick previously developed an artificial "nose" that<br />

can detect and identify poisonous gases, tox<strong>in</strong>s and<br />

explosives <strong>in</strong> the air.<br />

The artificial nose is an array of 36 cross-reactive<br />

pigment dots that change color when they sense<br />

chemicals <strong>in</strong> the air. The researchers spread blood<br />

samples on Petri dishes of a standard growth gel,<br />

attached an array to the <strong>in</strong>side of the lid of each dish,<br />

then <strong>in</strong>verted the dishes onto an ord<strong>in</strong>ary flatbed<br />

scanner. Every 30 m<strong>in</strong>utes, they scanned the arrays<br />

and recorded the color changes <strong>in</strong> each dot. The<br />

pattern of color change over time is unique to each<br />

bacterium.<br />

In only a few hours, the array not only confirms the<br />

presence of bacteria, but identifies a specific species<br />

and stra<strong>in</strong>. It even can recognize antibiotic resistance<br />

– a key factor <strong>in</strong> treatment decisions.<br />

In the paper, the researchers showed that they could<br />

identify 10 of the most common disease-caus<strong>in</strong>g<br />

bacteria, <strong>in</strong>clud<strong>in</strong>g the hard-to-kill hospital <strong>in</strong>fection<br />

methicill<strong>in</strong>-resistant Staphylococcus aureus (MRSA),<br />

with 98.8 percent accuracy. However, Suslick believes<br />

the array could be used to diagnose a much wider<br />

variety of <strong>in</strong>fections.<br />

Given their broad sensitivity, the chemical-sens<strong>in</strong>g<br />

arrays also could enable breath diagnosis for a<br />

number of conditions. Medical researchers at other<br />

<strong>in</strong>stitutions have already performed studies us<strong>in</strong>g<br />

Suslick's arrays to diagnose s<strong>in</strong>us <strong>in</strong>fections and to<br />

screen for lung cancer.<br />

Next, the team is work<strong>in</strong>g on <strong>in</strong>tegrat<strong>in</strong>g the arrays<br />

with vials of liquid growth medium, which is a faster<br />

cultur<strong>in</strong>g agent and more common <strong>in</strong> cl<strong>in</strong>ical practice<br />

than Petri dishes. They have also improved the<br />

pigments to be more stable, more sensitive and easier<br />

to pr<strong>in</strong>t.<br />

news.ill<strong>in</strong>ois.edu<br />

12


13<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

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<br />

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<br />

<br />

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Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

COMPOUND SEMICONDUCTORS<br />

A <strong>global</strong> SiC materials license agreement between Cree and Nippon Steel<br />

Cree announces it has entered <strong>in</strong>to a silicon carbide (SiC) materials license agreement with Nippon Steel Corporation.<br />

Under the terms of the agreement, Nippon Steel<br />

Corporation, and affiliates <strong>in</strong>clud<strong>in</strong>g Nippon<br />

Steel Materials Co., Ltd., have been given the<br />

right to manufacture and sell silicon carbide materials<br />

for electronic device applications. Over the lifetime of<br />

the agreement, Cree will receive certa<strong>in</strong> f<strong>in</strong>ancial<br />

considerations from Nippon Steel. As part of this<br />

agreement, Cree was also granted rights to Nippon<br />

Steel’s relevant SiC-related patents. Other terms of<br />

the agreement were not disclosed. No technology<br />

transfer between the parties was <strong>in</strong>cluded.<br />

SiC is a high-performance semiconductor material<br />

used <strong>in</strong> the production of a broad range of light<strong>in</strong>g,<br />

power and communication components, <strong>in</strong>clud<strong>in</strong>g<br />

light-emitt<strong>in</strong>g diodes (LEDs), power switch<strong>in</strong>g devices<br />

and RF power transistors for wireless communications.<br />

SiC devices are used today for solar <strong>in</strong>verters, highvoltage<br />

power supplies and power condition<strong>in</strong>g <strong>in</strong><br />

many <strong>in</strong>dustrial power applications.<br />

“Cree is a pioneer <strong>in</strong> SiC materials technologies,<br />

result<strong>in</strong>g <strong>in</strong> energy-efficient power switch<strong>in</strong>g devices<br />

and high brightness LEDs,” said Steve Kelley, Cree<br />

chief operat<strong>in</strong>g officer. “We are pleased that Nippon<br />

Steel jo<strong>in</strong>s us <strong>in</strong> support<strong>in</strong>g the electronics device<br />

<strong>in</strong>dustry with licensed SiC materials.”<br />

“Nippon Steel has been conduct<strong>in</strong>g <strong>in</strong>tensive R&D on<br />

SiC materials over twenty years,” said Dr. Misao<br />

Hashimoto, Nippon Steel, fellow and director of the<br />

Advanced Technology Research Laboratory. “The<br />

good work<strong>in</strong>g relationship between Cree and Nippon<br />

Steel enabled us to achieve our commitment for<br />

grow<strong>in</strong>g the <strong>global</strong> SiC market.”<br />

Cree is a market-lead<strong>in</strong>g <strong>in</strong>novator of semiconductor<br />

solutions for wireless and power applications, light<strong>in</strong>gclass<br />

LEDs, and LED light<strong>in</strong>g solutions.<br />

Cree has more than 1,800 patents issued worldwide<br />

and more than 2,600 pend<strong>in</strong>g patent applications that<br />

address LED chip, component and light<strong>in</strong>g technology,<br />

as well as SiC materials, and RF and Power electronics.<br />

(Courtesy of Cree and Nippon Steel Corporation)<br />

Cree’s product families <strong>in</strong>clude power-switch<strong>in</strong>g<br />

devices and radio-frequency/wireless devices, blue<br />

and green LED chips, high-brightness LEDs, light<strong>in</strong>gclass<br />

power LEDs, and LED fixtures and bulbs. Cree<br />

solutions are driv<strong>in</strong>g improvements <strong>in</strong> applications<br />

such as variable-speed motors, wireless<br />

communications, general illum<strong>in</strong>ation, backlight<strong>in</strong>g<br />

and electronic signs and signals.<br />

www.cree.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

TSMC sp<strong>in</strong>s off two green energy bus<strong>in</strong>ess units<br />

Taiwan Semiconductor Manufactur<strong>in</strong>g (TSMC`s) board of directors approved, at a provisional meet<strong>in</strong>g, a proposal to<br />

reorganize two green-energy bus<strong>in</strong>ess units <strong>in</strong>to wholly-owned subsidiaries.<br />

The board determ<strong>in</strong>ed <strong>in</strong>itial paid-<strong>in</strong> capital for its<br />

solar-energy bus<strong>in</strong>ess unit, christened TSMC<br />

Solar Ltd., at NT$12.5 billion (US$416 million<br />

at US$1:NT$30) and the capital for its LED (light<br />

emitt<strong>in</strong>g diode) bus<strong>in</strong>ess unit, named TSMC Solid State<br />

Light<strong>in</strong>g Ltd., at NT$2.8 billion (US$93 million).<br />

The company has set basel<strong>in</strong>e date for the splits on<br />

August 1 this year. It said the ma<strong>in</strong> thrust of sp<strong>in</strong>n<strong>in</strong>g<br />

off the two bus<strong>in</strong>ess units <strong>in</strong>to subsidiaries is to<br />

motivate entrepreneurship and facilitate bus<strong>in</strong>ess<br />

specialization <strong>in</strong> order to boost overall competitiveness<br />

and operational efficiency.<br />

GT Solar International, a provider of sapphire<br />

crystall<strong>in</strong>e growth systems and materials for<br />

the solar, LED and other specialty markets,<br />

reports that that it has received an order for its sapphire<br />

crystallization furnaces total<strong>in</strong>g $218.9 million from<br />

TSMC stressed that the splits will not affect its<br />

shareholders’ <strong>in</strong>terests as its ownership capital <strong>in</strong> the<br />

two subsidiaries is equivalent to their operat<strong>in</strong>g value,<br />

suggest<strong>in</strong>g the company does not overvalue the two<br />

subsidiaries.<br />

Guizhou Haotian Optoelectronics Technology Co. LTD<br />

(HTOT).<br />

The order will be placed <strong>in</strong> HTOT's new sapphire<br />

production facility to supply manufacturers with<br />

sapphire wafers for LED chip production. GT Solar<br />

In recent years, TSMC has seen some results from its<br />

<strong>in</strong>vestments <strong>in</strong> green-energy <strong>in</strong>dustries; the company<br />

has bought <strong>in</strong>to solar-cell maker Motech Industries<br />

Inc., entered <strong>in</strong>to partnership with German solar<br />

module maker, CENTROSOLAR, on polycrystall<strong>in</strong>e<br />

silicon bus<strong>in</strong>ess, and begun construct<strong>in</strong>g a CIGSbased<br />

(copper <strong>in</strong>dium gallium selenide-based) solarcell<br />

factory.<br />

In the LED field, TSMC has begun pilot production <strong>in</strong><br />

a wafer factory <strong>in</strong> the Hs<strong>in</strong>chu Science Park runn<strong>in</strong>g<br />

around eight to 12 MOCVD (metal organic chemical<br />

vapor deposition) chambers. The TSMC-held VisEra<br />

Technologies Co., Ltd. has begun offer<strong>in</strong>g packag<strong>in</strong>g<br />

and test service to its LED wafer factory. TSMC will<br />

make its LED light sources and light eng<strong>in</strong>es available<br />

on the market with its brand names.<br />

news.cens.com<br />

GT Solar gets order for sapphire growth systems from new entrant <strong>in</strong>to LED-related<br />

material market<br />

says that the order marks HTOT's entrance <strong>in</strong>to the<br />

LED <strong>in</strong>dustry.<br />

www.sslight<strong>in</strong>g.net<br />

14


15<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

PHOTONICS<br />

Strong growth projected for silicon photonics market accord<strong>in</strong>g to new market<br />

survey<br />

The silicon photonics market is expected to reach a value of the $2.02 billion by 2015, reflect<strong>in</strong>g a five-year compound<br />

annual growth rate of 78.2 percent, accord<strong>in</strong>g to the report Global Silicon Photonics Market (2010-2015), published by<br />

MarketsandMarkets.<br />

Highlights of the market report <strong>in</strong>clude the<br />

follow<strong>in</strong>g:<br />

• Silicon photonics technology is ga<strong>in</strong><strong>in</strong>g<br />

ground as a low-cost alternative for address<strong>in</strong>g the<br />

speed and bulk data transfer challenges faced by<br />

microelectronics. The market is <strong>in</strong> its <strong>in</strong>fancy and is<br />

expected to be commercialized by 2016.<br />

• In 2010, the wavelength division multiplex filters<br />

contributed $35,212 to the <strong>global</strong> silicon photonics<br />

market, ma<strong>in</strong>ly because of early commercialization<br />

and extensive usage <strong>in</strong> optical switches and<br />

transceiver devices.<br />

• The silicon photonics LED market is expected to<br />

experience the relatively high compound annual<br />

growth rate of 87.6 percent from 2010 to 2015<br />

because of an <strong>in</strong>creas<strong>in</strong>g need for an efficient light<br />

source <strong>in</strong> small-distance communication<br />

networks.<br />

• At present, North America dom<strong>in</strong>ates the silicon<br />

photonics market, hav<strong>in</strong>g generated $59,667 <strong>in</strong> 2010.<br />

The worth of the market <strong>in</strong> the region is projected to<br />

reach $849,587 <strong>in</strong> 2015 with a compound annual<br />

growth rate from 2010 to 2015 of 70.1 percent.<br />

• Major players <strong>in</strong> the <strong>global</strong> silicon photonics market<br />

<strong>in</strong>clude Kotura, Lightwire, Luxtera and Chiral<br />

Photonics, all US companies.<br />

www.marketsandmarkets.com<br />

New manag<strong>in</strong>g director at 3S Photonics French subsidiary<br />

New manag<strong>in</strong>g director at 3S Photonics French subsidiary 3S Photonics Group announced the nom<strong>in</strong>ation of Jean-Michel<br />

Bonard as its manag<strong>in</strong>g director <strong>in</strong> France, as well as the creation of three new transversal positions with<strong>in</strong> the group’s board.<br />

Bonard jo<strong>in</strong>ed the company <strong>in</strong> 2009 as deputy<br />

general manager <strong>in</strong> charge of company<br />

operations. In addition, he was responsible for<br />

the f<strong>in</strong>ance department. Prior to jo<strong>in</strong><strong>in</strong>g the group, he<br />

worked at Katun Corp. and GE Capital F<strong>in</strong>ance, and<br />

he created JMB Conseils, a f<strong>in</strong>ancial consult<strong>in</strong>g firm<br />

for telecom and IT companies.<br />

To strengthen the collaboration between its entities,<br />

the company has created three transversal and<br />

strategic positions with<strong>in</strong> its board: Jean-Pierre Hirtz,<br />

bus<strong>in</strong>ess development director; Geoffroy Morel, chief<br />

f<strong>in</strong>ancial officer; and Fotis Konstant<strong>in</strong>idis, vice<br />

president of sales.<br />

The announcement follows the company’s February<br />

2010 acquisition of Avensys Inc., based <strong>in</strong> Canada.<br />

To re<strong>in</strong>force its <strong>in</strong>ternational position, 3S Photonics<br />

has also launched a policy for diversification,<br />

geographical expansion and strategic partnerships.<br />

3S Photonics designs, develops and markets optical<br />

components and modules, and modules based on<br />

optical fiber. Through its subsidiary Avensys Solutions,<br />

it provides environmental and <strong>in</strong>dustrial process<br />

surveillance.<br />

www.3sphotonics.com<br />

The City College of New York set up a new metamaterials <strong>center</strong><br />

A new <strong>in</strong>dustry and university cooperative research <strong>center</strong> proposes to provide a one-stop shop for the design, fabrication<br />

and test<strong>in</strong>g of a wide range of metamaterials designed to aid solar photovoltaic systems, specialized light sensors and more.<br />

Researchers at the National Science<br />

Foundation-sponsored <strong>center</strong> will focus on<br />

fundamental research concepts that are<br />

limit<strong>in</strong>g the application and implementation of<br />

metamaterials to commercial products. For example,<br />

by controll<strong>in</strong>g the composition of a material, it may be<br />

possible to produce superlenses with near-perfect<br />

resolution.<br />

The <strong>center</strong>'s research thrusts will encompass<br />

fundamental metamaterials research, <strong>in</strong>clud<strong>in</strong>g the<br />

follow<strong>in</strong>g: materials for rapid prototyp<strong>in</strong>g,<br />

metamaterials build<strong>in</strong>g blocks, all-dielectric resonator<br />

Universal Display announced the release of a novel s<strong>in</strong>gle-layer encapsulation technology for plastic substrate systems<br />

and th<strong>in</strong>-film devices, <strong>in</strong>clud<strong>in</strong>g rigid and flexible OLED displays and light<strong>in</strong>g panels.<br />

Developed <strong>in</strong> collaboration with research<br />

partner Pr<strong>in</strong>ceton University, the s<strong>in</strong>gle-layer<br />

hybrid organic-<strong>in</strong>organic layer approach was<br />

demonstrated successfully as an encapsulant for<br />

flexible and rigid OLED devices. Its encapsulation<br />

layer provides a permeation barrier to protect th<strong>in</strong>-film<br />

devices from environmental conditions such as<br />

metamaterials, development of model<strong>in</strong>g and design<br />

algorithms, process development of composite<br />

materials, aperture and cavity arrays, tools for<br />

characterization of metamaterials, next-generation<br />

metallic resonator metamaterials, and high-, zero-,<br />

and negative-refractive-<strong>in</strong>dex materials.<br />

Industry and university cooperative research <strong>center</strong>s<br />

conduct fundamental research. The companies that<br />

participate <strong>in</strong> the <strong>center</strong> direct the research and<br />

receive royalty-free, nonexclusive licenses to the<br />

<strong>in</strong>tellectual property the <strong>center</strong> produces.<br />

Plac<strong>in</strong>g th<strong>in</strong> metamaterial films over silicon panels<br />

Universal Display unveils novel encapsulation technology<br />

moisture and oxygen, a quality that is critical for the<br />

long-term performance of OLED display and light<strong>in</strong>g<br />

products.<br />

The encapsulation technology was supported <strong>in</strong> part<br />

by National Science Foundation, US Department of<br />

Defense and US Department of Energy SBIR<br />

contracts. To demonstrate the technology’s<br />

would allow solar light to pass through to silicon<br />

surfaces unblocked. The same film would capture the<br />

electricity produced by those surfaces, possibly<br />

rais<strong>in</strong>g the efficiency of terrestrial solar cells from 17<br />

to 21 percent, he said. Because the film would spread<br />

light laterally across the cell, th<strong>in</strong>ner silicon wafers<br />

could be used, which would reduce costs.<br />

The sensor projects, be<strong>in</strong>g conducted with NASA and<br />

DARPA, aim to produce lightweight polar image metric<br />

sensors capable of measur<strong>in</strong>g light's <strong>in</strong>tensity, color<br />

and polarization or orientation.<br />

www.ccny.cuny.edu<br />

effectiveness for flexible OLED display prototype, the<br />

company has worked with the US Army Research<br />

Laboratory and the Flexible Display Center at Arizona<br />

State University.<br />

www.universaldisplay.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

PHOTOVOLTAIC<br />

centrotherm photovoltaics & K<strong>in</strong>etics Germany consortium signs major order<br />

to construct fully <strong>in</strong>tegrated factory <strong>in</strong> Algeria<br />

The consortium signed an agreement with state utility Société Nationale de l'Electricité et du Gaz (Sonelgaz) to construct<br />

an almost fully <strong>in</strong>tegrated solar module factory <strong>in</strong> Algeria.<br />

This factory will impress by cover<strong>in</strong>g the entire<br />

solar value cha<strong>in</strong>, rang<strong>in</strong>g from <strong>in</strong>got production<br />

and solar cell manufactur<strong>in</strong>g through to solar<br />

module end-products, although it will not <strong>in</strong>clude the<br />

production of silicon as a raw material. The high degree<br />

of <strong>in</strong>tegration <strong>in</strong> the production of solar wafers, cells<br />

and modules allows low production costs to be<br />

achieved, thereby result<strong>in</strong>g <strong>in</strong> high-quality modules at<br />

competitive prices.<br />

The order volume for the consortium consist<strong>in</strong>g of<br />

centrotherm photovoltaics and K<strong>in</strong>etics weighs <strong>in</strong> at<br />

around EUR 290 million, with the largest proportion of<br />

this amount be<strong>in</strong>g attributable to centrotherm<br />

photovoltaics. In l<strong>in</strong>e with centrotherm photovoltaics'<br />

company policy, the order will only be reported <strong>in</strong> the<br />

order book if certa<strong>in</strong> <strong>in</strong>ternal criteria are satisfied, such<br />

as a pre-payment. As part of this turnkey project,<br />

centrotherm photovoltaics will deliver all of the<br />

photovoltaic systems on a turnkey basis, rang<strong>in</strong>g from<br />

multi-crystall<strong>in</strong>e <strong>in</strong>got furnaces and <strong>in</strong>got manufactur<strong>in</strong>g<br />

through to module production, and it will provide<br />

support to Sonelgaz all the way through to system<br />

commission<strong>in</strong>g. K<strong>in</strong>etics will be responsible for<br />

eng<strong>in</strong>eer<strong>in</strong>g services, construction management, the<br />

turnkey production of the build<strong>in</strong>g, and the technical<br />

fitt<strong>in</strong>gs for the build<strong>in</strong>g.<br />

The <strong>first</strong> high-performance modules should be<br />

produced by 2014 at the plant, which is to be<br />

constructed at Rouiba, 30 km east of the capital Algiers.<br />

These modules are primarily <strong>in</strong>tended to supply the<br />

domestic market. The largest solar module factory <strong>in</strong><br />

the African cont<strong>in</strong>ent's second largest country will<br />

deliver an annual production capacity of around 116<br />

MWp and is to be constructed on a land area of around<br />

43,000 m² – which corresponds to the size of<br />

approximately six football fields.<br />

With more than 3,000 hours of sunsh<strong>in</strong>e per year,<br />

Algeria is one of the countries with the highest solar<br />

radiation levels <strong>in</strong> the world. Accord<strong>in</strong>g to <strong>in</strong>formation<br />

provided by Algerian sources, around 6 to 8 percent of<br />

electricity demand <strong>in</strong> Algeria is to be covered from<br />

renewable energy by 2020, and even as much as up<br />

to 35 percent by 2040.<br />

www.centrotherm-pv.com<br />

SunPower and Total Partner to create a new <strong>global</strong> leader <strong>in</strong> the solar <strong>in</strong>dustry<br />

SunPower and Total announced that the two companies have entered <strong>in</strong>to a broad strategic relationship to shape the<br />

future of the solar <strong>in</strong>dustry.<br />

Total Group will launch a friendly tender offer<br />

through a wholly owned subsidiary for up to 60<br />

percent of SunPower's outstand<strong>in</strong>g Class A<br />

Common shares and 60 percent of SunPower's<br />

outstand<strong>in</strong>g Class B Common shares at a price of<br />

$23.25/share for each class. The offer price represents<br />

a 46 percent premium over the April 27, 2011 clos<strong>in</strong>g<br />

price of SunPower's Class A common stock and a 49<br />

percent premium over the April 27, 2011clos<strong>in</strong>g price<br />

of SunPower's Class B common stock, and values<br />

SunPower's equity at $2.3 billion. In addition, Total will<br />

provide SunPower with up to $1 billion of credit support<br />

over the next five years. Follow<strong>in</strong>g clos<strong>in</strong>g of the<br />

transaction, which has been approved by the boards<br />

of both companies, SunPower will cont<strong>in</strong>ue to operate<br />

with its current management team.<br />

us.sunpowercorp.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

New world record for mass produced conventional silicon solar cell - 19.2 percent<br />

efficiency<br />

Sunrise Global Solar Energy has set a new world efficiency record for mass produced conventional solar cells.<br />

Apeak efficiency rate of up to 19.2 percent has<br />

been reached for the <strong>first</strong> time <strong>in</strong> standard<br />

volume production by comb<strong>in</strong><strong>in</strong>g Sunrise’s<br />

unique process<strong>in</strong>g know-how and the selective emitter<br />

technology from Schmid, one of its technology<br />

partners.<br />

Sunrise Global Solar Energy (Sunrise) has achieved<br />

a conventionally processed cell conversion efficiency<br />

of 19.2 percent for the <strong>first</strong> time <strong>in</strong> <strong>in</strong>dustrial mass<br />

production. Sunrise achieved this result through its<br />

cooperation with Schmid GmbH + Co (Schmid). The<br />

measurements were confirmed by the University of<br />

Konstanz and the Fraunhofer Institute for Solar Energy<br />

GT Solar announced that it has received a $93.9<br />

million order from Taiwan-based polysilicon<br />

producer Powertec Energy Corporation for a<br />

complete suite of polysilicon production equipment<br />

and technology <strong>in</strong>clud<strong>in</strong>g SDR 400 reactors,<br />

hydrochlor<strong>in</strong>ation, filament and product process<strong>in</strong>g<br />

Systems, verify<strong>in</strong>g the claims of the two companies.<br />

Alongside the selective emitter technology from<br />

Schmid and advanced process<strong>in</strong>g steps optimized by<br />

Sunrise, the cell efficiency record was otherwise<br />

achieved <strong>in</strong> a standard s<strong>in</strong>gle-sided screen-pr<strong>in</strong>ted<br />

solar cell structure – thereby sett<strong>in</strong>g a new <strong>global</strong><br />

standard for conventional solar cells. The production<br />

runs of record solar cells which achieve a peak rate of<br />

19.2 percent are based on <strong>in</strong>dustrial grade 6” monocrystall<strong>in</strong>e<br />

wafer material (Czochralski draw<strong>in</strong>g) with<br />

conventional screen pr<strong>in</strong>ted alum<strong>in</strong>um backside.<br />

The <strong>in</strong>creased rate of efficiency reached by Sunrise<br />

was made possible by the use of the selective emitter<br />

equipment.The equipment will be <strong>in</strong>stalled <strong>in</strong><br />

Powertec’s new polysilicon facility which is expected<br />

to beg<strong>in</strong> production <strong>in</strong> 2012. The order will be <strong>in</strong>cluded<br />

<strong>in</strong> GT Solar’s backlog for its current Q1 FY12, which<br />

ends on July 2, 2011. The SDR 400 CVD reactor has<br />

proven capability of produc<strong>in</strong>g over 400 metric tons<br />

technology developed <strong>in</strong>ternally by the Schmid Group<br />

and comb<strong>in</strong>ed with the highly optimized fabrication<br />

steps by the Sunrise team, which has a track record<br />

of push<strong>in</strong>g the boundaries of solar cell efficiencies.<br />

Digital pr<strong>in</strong>t<strong>in</strong>g of etch masks on solar cells.<br />

www.schmid-group.com<br />

GT Solar receives $93.9 million order for polysilicon production equipment and<br />

technology Powertec Energy Corporation<br />

annually (MTA) of polysilicon and cont<strong>in</strong>ues GT Solar’s<br />

leadership position for develop<strong>in</strong>g the most energy<br />

efficient reactors <strong>in</strong> the <strong>in</strong>dustry.<br />

www.gtsolar.com<br />

16


17<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

Webcast Available Today<br />

on i-micronews.com/webcast<br />

Tam<strong>in</strong>g Extreme<br />

Topography for High-Aspect-<br />

Ratio Structures<br />

For Microelectronics Applications<br />

Jo<strong>in</strong> our webcast to learn about<br />

the Next Generation of planarization<br />

solutions to solve your High-Aspect-<br />

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Across many applications such as :<br />

•MEMS•LED•Solar•Displays<br />

This webcast will discuss the challenges<br />

faced by the next generation microelectronic<br />

manufacturers try<strong>in</strong>g to push technology<br />

to higher and higher aspect ratios... Learn<br />

about the latest technologies of self-level<strong>in</strong>g<br />

coat<strong>in</strong>gs that are compatible with exist<strong>in</strong>g<br />

lithography processes and photoresists,<br />

allow process<strong>in</strong>g over extreme topography,<br />

and are easily removed. These materials<br />

will expand eng<strong>in</strong>eer<strong>in</strong>g design capabilities,<br />

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production costs.<br />

SPEAKERS<br />

Madison M. Daily, Jr.,<br />

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Jérôme Baron,<br />

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To learn more and to watch the webcast, please go to<br />

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Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

ADVANCED PACKAGING<br />

STATS ChipPAC expands 300mm<br />

Through Silicon Via capabilities<br />

From page 1<br />

STATS ChipPAC has complete front to back-end manufactur<strong>in</strong>g capabilities<br />

for 200mm wafers and currently handles both chip-to-chip and chip-to-wafer<br />

assembly for TSV technology. This <strong>in</strong>cludes high density microbump<br />

capabilities <strong>in</strong> both solder and copper column materials, microbump bond<strong>in</strong>g down<br />

to 40um pitch, th<strong>in</strong> wafer handl<strong>in</strong>g, wafer level underfill, th<strong>in</strong> wafer dic<strong>in</strong>g and<br />

microbumps for flip chip <strong>in</strong>terconnection. Microbump technology is critical to<br />

deliver<strong>in</strong>g f<strong>in</strong>e pitch, low profile solutions for high performance devices.<br />

The latest TSV <strong>in</strong>vestment that STATS ChipPAC has made is the addition of a<br />

300mm “mid-end” process flow that occurs between the wafer fabrication and<br />

back-end assembly process. Mid-end processes support the advanced<br />

manufactur<strong>in</strong>g requirements of 2.5D and 3D TSV as well as wafer level packag<strong>in</strong>g,<br />

flip chip and embedded die technology.<br />

Recent Through-Silicon-Via and micro-bump<strong>in</strong>g realisations<br />

from STATS ChipPAC:<br />

2.5D silicon <strong>in</strong>terposer "PoP module" demonstrator from STATS ChipPAC<br />

www.statschippac.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

CEA-Leti to implement multiple<br />

EV Group systems on its new 300-mm<br />

fab l<strong>in</strong>e dedicated to 3D <strong>in</strong>tegration<br />

EV Group (EVG) announced that its longtime customer and<br />

partner, CEA-Leti, has <strong>in</strong>stalled multiple EVG tools <strong>in</strong> its<br />

<strong>in</strong>dustry-<strong>first</strong> 300-mm cleanroom dedicated to R&D and<br />

prototyp<strong>in</strong>g for 3D-<strong>in</strong>tegration applications.<br />

While Leti's new state-of-the-art facility is focused on R&D and prototyp<strong>in</strong>g,<br />

EVG's equipment will be leveraged with an eye toward widespread adoption<br />

of 3D technology for high-volume applications. Specifically, EVG's<br />

equipment will be used <strong>in</strong> 3D technology demonstrations for Leti's <strong>global</strong> customer<br />

base, as well as low-volume pilot production on 300-mm wafers with the end goal of<br />

transferr<strong>in</strong>g the processes to their <strong>in</strong>dustrial partners' high-volume manufactur<strong>in</strong>g<br />

environments. The EVG systems to be deployed on CEA-Leti's new 300-mm 3D l<strong>in</strong>e<br />

<strong>in</strong>clude an IQ Aligner production mask alignment system, a SmartView NT highest<br />

precision bond alignment system, an EVG560 production wafer bond<strong>in</strong>g system and<br />

an EVG850 production bond<strong>in</strong>g system for direct wafer bond<strong>in</strong>g. These lithography<br />

and packag<strong>in</strong>g systems were specifi cally chosen for the advantages they deliver <strong>in</strong><br />

3D-<strong>in</strong>tegration process<strong>in</strong>g. Moreover, CEA-Leti will be able to tap EVG's extensive<br />

process know-how <strong>in</strong> 3D <strong>in</strong>tegration and through-silicon via (TSV) manufactur<strong>in</strong>g, as<br />

the <strong>in</strong>stitute's 3D offer<strong>in</strong>gs <strong>in</strong>clude TSVs along with advanced capabilities <strong>in</strong> alignment,<br />

bond<strong>in</strong>g, th<strong>in</strong>n<strong>in</strong>g and <strong>in</strong>terconnects.<br />

EVG works not only with research consortia and <strong>in</strong>stitutions such as CEA-Leti, but also<br />

with <strong>global</strong> consortia, <strong>in</strong>clud<strong>in</strong>g EMC-3D, SEMI, NILCOM, NIL Austria, and Mancef.<br />

www.EVGroup.com<br />

18


19<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

ADVANCED PACKAGING<br />

Major semiconductor companies jo<strong>in</strong> SEMATECH’s 3D enablement <strong>center</strong> to<br />

accelerate adoption of 3D TSV technologies<br />

Advanced Semiconductor Eng<strong>in</strong>eer<strong>in</strong>g (ASE), Altera Corporation, Analog Devices, LSI Corporation, ON Semiconductor,<br />

and Qualcomm collaborate to develop standards and technical specifications for 3D ICs.<br />

SEMATECH announced that these companies<br />

have jo<strong>in</strong>ed SEMATECH’s 3D Enablement<br />

program based at the College of Nanoscale<br />

Science and Eng<strong>in</strong>eer<strong>in</strong>g (CNSE) of the University<br />

at Albany. These lead<strong>in</strong>g semiconductor companies<br />

will jo<strong>in</strong> CNSE, GlobalFoundries, Hewlett Packard,<br />

Hynix, IBM, Intel, Samsung, and UMC to extend the<br />

program’s position as a broad, cohesive <strong>in</strong>itiative<br />

and to enable <strong>in</strong>dustry-wide ecosystem read<strong>in</strong>ess<br />

for cost effective TSV-based 3D stacked IC<br />

solutions.<br />

As members, these program participants will work<br />

with SEMATECH researchers to contribute to the<br />

overall vision of the Enablement Center, which<br />

<strong>in</strong>cludes identification of critical needs for 3D<br />

technologies, and the development of path fi nd<strong>in</strong>g<br />

capabilities, EDA tools, and appropriate test vehicles.<br />

In December 2010, SEMATECH, along with the<br />

Semiconductor Industry Association (SIA) and the<br />

Semiconductor Research Corporation (SRC),<br />

launched a new 3D Enablement program to drive<br />

<strong>in</strong>dustry standardization efforts and technical<br />

specifi cations for heterogeneous 3D <strong>in</strong>tegration. As<br />

a fi rst-of-its-k<strong>in</strong>d effort, the 3D Enablement program<br />

aims to establish the <strong>in</strong>frastructure necessary for the<br />

entire <strong>in</strong>dustry to leverage 3D packag<strong>in</strong>g technology<br />

for <strong>in</strong>novative new applications. The primary focus is<br />

on develop<strong>in</strong>g technologies and specifications<br />

necessary for establish<strong>in</strong>g standards <strong>in</strong> critical areas<br />

such as <strong>in</strong>spection, metrology, microbump<strong>in</strong>g,<br />

bond<strong>in</strong>g and th<strong>in</strong> wafer, and die handl<strong>in</strong>g.<br />

www.sematech.org<br />

ASE steps up <strong>in</strong>vestment <strong>in</strong> Ch<strong>in</strong>a<br />

Advanced Semiconductor Eng<strong>in</strong>eer<strong>in</strong>g (ASE) has revealed plans to <strong>in</strong>vest a total of US$1.2 billion on manufactur<strong>in</strong>g<br />

facilities <strong>in</strong> Shanghai, Ch<strong>in</strong>a.<br />

ASE will build a 180,000-square-meter plant as<br />

part of an effort to expand its operations <strong>in</strong><br />

Ch<strong>in</strong>a, the company said. Located <strong>in</strong> J<strong>in</strong>qiao,<br />

Pudong New Area, the new facility will target higherend<br />

wirebond<strong>in</strong>g and packag<strong>in</strong>g services with volume<br />

production slated for the second half of 2011.<br />

ASE also unveiled plans to set up its regional<br />

headquarters and R&D <strong>center</strong> <strong>in</strong> Zhangjiang,<br />

Shanghai. Construction of the 116,000-square-meter<br />

factory build<strong>in</strong>g will be divided <strong>in</strong>to three phases, ASE<br />

said, add<strong>in</strong>g that operations are scheduled to<br />

commence <strong>in</strong> 2012. In November 2010, ASE<br />

announced <strong>in</strong>vestment worth US$60 million to<br />

expand capacity at its subsidiary ASE (Weihai) <strong>in</strong><br />

Shandong Prov<strong>in</strong>ce, Ch<strong>in</strong>a. Earlier <strong>in</strong> the year, the<br />

company said it would spend a total of US$124 million<br />

on operation expansion <strong>in</strong> Ch<strong>in</strong>a, <strong>in</strong>clud<strong>in</strong>g<br />

construction of a new plant <strong>in</strong> the Pudong <strong>in</strong>dustrial<br />

district of Shanghai and additional production l<strong>in</strong>es<br />

at its Kunshan, Jiangsu Prov<strong>in</strong>ce facility.<br />

www.digitimes.com<br />

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MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

NANOTECHNOLOGY<br />

Nanostart launches nanotechnology fund <strong>in</strong> Russia<br />

From page 1<br />

In addition to the sharehold<strong>in</strong>g, as fund manager<br />

Nanostart receives a carried <strong>in</strong>terest of up to 25<br />

percent as well as an annual management fee<br />

total<strong>in</strong>g 3 percent of fund volume.<br />

For Nanostart, the fund marks a prelude to bus<strong>in</strong>ess<br />

activities <strong>in</strong> Russia.<br />

Nanostart found ideal conditions for the fund <strong>in</strong> Perm.<br />

Governor Oleg Chirkunov is develop<strong>in</strong>g the region <strong>in</strong>to<br />

a technology pioneer. The emphasis is on<br />

development, commercialization, and application of<br />

nanotechnology products. Accord<strong>in</strong>g to RBC Daily,<br />

Perm is among the Top 10 most <strong>in</strong>novative regions of<br />

Russia.<br />

The fund is part of an <strong>in</strong>itiative by the Russian<br />

government to develop <strong>in</strong>to a high-tech nation. The<br />

goal is to be one of the most important countries <strong>in</strong> the<br />

world for the production of nanotechnology-based<br />

products. This progress is ma<strong>in</strong>ly driven by the Russian<br />

company RUSNANO. The former government hold<strong>in</strong>g<br />

has been a stock corporation s<strong>in</strong>ce March 2011. It<br />

promotes the commercialization of nanotechnological<br />

<strong>in</strong>novation and the development of necessary<br />

<strong>in</strong>frastructure to support projects. The equivalent of<br />

nearly 10 billion dollars has been made available.<br />

Nanostart was selected from among several<br />

renowned <strong>in</strong>ternational competitors dur<strong>in</strong>g the fund<br />

application process. This cooperation with<br />

dist<strong>in</strong>guished Russian partners is further proof that<br />

Nanostart AG has established itself as a lead<strong>in</strong>g and<br />

sought-after expert for nanotech <strong>in</strong>vestment.<br />

Through the fund, which should last up to 10 years,<br />

Nanostart will benefit from the growth potential of<br />

nanotechnology <strong>in</strong> Perm and Russia. Russia has set<br />

a goal to become a lead<strong>in</strong>g producer of<br />

nanotechnology products by 2015. The Kama Fund<br />

First is named after the Kama River, which flows<br />

through the region.<br />

www.nanostart.de<br />

Limit to nanotechnology mass-production?<br />

A lead<strong>in</strong>g nanotechnology scientist has raised questions over a billion dollar <strong>in</strong>dustry by boldly claim<strong>in</strong>g that there<br />

is a limit to how small nanotechnology materials can be mass produced.<br />

In a paper published on April 21, <strong>in</strong> IOP Publish<strong>in</strong>g's<br />

journal Nanotechnology, Professor Mike Kelly,<br />

Centre for Advanced Photonics and Electronics,<br />

University of Cambridge, stated that you cannot mass<br />

produce structures with a diameter of three nanometres<br />

or less us<strong>in</strong>g a top-down approach.<br />

This statement raises a major question concern<strong>in</strong>g the<br />

billions of dollars that are poured <strong>in</strong>to nanotechnology<br />

each year <strong>in</strong> the hope that the latest technology<br />

developed <strong>in</strong> the lab can make the transition to a<br />

manufactured product on the market.<br />

Nanotechnology is built on the ability to control and<br />

manipulate matter at the atomic and molecular level<br />

and has far reach<strong>in</strong>g applications <strong>in</strong>clud<strong>in</strong>g the delivery<br />

of drugs <strong>in</strong>to the body, <strong>in</strong>creas<strong>in</strong>g the efficiency of solar<br />

panels and improv<strong>in</strong>g methods of food packag<strong>in</strong>g. The<br />

overall goal when enter<strong>in</strong>g nanotechnologies <strong>in</strong>to the<br />

market is low-cost, high-volume manufacturability, but<br />

at the same time, the materials' properties must be<br />

highly reproducible with<strong>in</strong> a pre-specified limit, which<br />

Kelly states cannot happen below the 3nm limit when<br />

try<strong>in</strong>g to make arrays.<br />

The top-down approach to manufactur<strong>in</strong>g, which Kelly<br />

states is limited, uses external tools to cut and shape<br />

large materials to conta<strong>in</strong> many smaller features. Its<br />

alternative, the bottom-up approach, <strong>in</strong>volves piec<strong>in</strong>g<br />

together small units, usually molecules, to construct<br />

whole materials -- much like a jigsaw puzzle -- however<br />

this process is too unpredictable for defect -- free mass<br />

production of arrays.<br />

Kelly used statistical evaluation of vertical nanopillars<br />

-- that have been suggested for uses <strong>in</strong> sensors and<br />

displays -- as an example to demonstrate his theory.<br />

He states that the proof comes <strong>in</strong> two stages. The <strong>first</strong><br />

is due to the fact that when materials are mass<br />

produced on such a small scale there will be a lot of<br />

variation <strong>in</strong> the size of different components.<br />

As a result of this variation, the properties of the<br />

material will vary to an extent where the material<br />

cannot function to full capacity with<strong>in</strong> an array.<br />

Professor Kelly says, "If I am wrong, and a<br />

counterexample to my theorem is provided, many<br />

scientists would be more secure <strong>in</strong> their cont<strong>in</strong>ued<br />

work<strong>in</strong>g, and that is good for science.<br />

www.iop.org<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

New cont<strong>in</strong>uous flow process for separat<strong>in</strong>g and sort<strong>in</strong>g carbon nanomaterials<br />

Archimedes Polymer Technologies and Brunel University, London have secured Technology Strategy Board Fund<strong>in</strong>g<br />

(TSB) to develop a new cont<strong>in</strong>uous flow process for separat<strong>in</strong>g and sort<strong>in</strong>g commercially available carbon<br />

nanotubes and carbon nanomaterials.<br />

Develop<strong>in</strong>g an effective process for the<br />

separat<strong>in</strong>g and sort<strong>in</strong>g of carbon<br />

nanomaterials will offer <strong>in</strong>dustry new costeffective<br />

manufactur<strong>in</strong>g techniques, high value-added<br />

materials and end-user products.<br />

Carbon nanomaterials are one of the most<br />

commercially relevant classes of nanomaterials,<br />

potentially hav<strong>in</strong>g the broadest range of applications<br />

from composites to consumer mass electronics,<br />

energy storage, membranes, healthcare and toxicity<br />

assessments. For high-value applications, high-purity<br />

and uniform carbon nanotubes are essential.<br />

This project aims to prove the concept and efficiency<br />

of a flow process for separation and sort<strong>in</strong>g of carbon<br />

nanotube products us<strong>in</strong>g a variable force field<br />

generated by a novel centrifuge, provid<strong>in</strong>g cont<strong>in</strong>uous<br />

parameter controlled, highly efficient mix<strong>in</strong>g,<br />

separation and extraction.<br />

New method to improve the electrical conductivity of polymeric composites<br />

wwwfr.uni.lu<br />

Polymeric composites consist of two or more materials and are used for example to shield off electrostatics <strong>in</strong> airplanes.<br />

By <strong>in</strong>troduc<strong>in</strong>g additives <strong>in</strong>to polymeric<br />

composites, favorable properties can be<br />

achieved. For <strong>in</strong>stance, they develop<br />

favorable electrical properties when re<strong>in</strong>forced with<br />

carbon nanotubes. Such composites are used to<br />

make flat-panel displays and solar cells more<br />

efficient. The researchers <strong>in</strong> Luxembourg, <strong>in</strong><br />

cooperation with scientists from the Netherlands,<br />

have studied the electrical percolation of carbon<br />

nanotubes <strong>in</strong> a polymer matrix and shown the<br />

percolation threshold - the po<strong>in</strong>t at which the<br />

polymer composite becomes conductive - can be<br />

considerably lowered if small quantities of a<br />

conductive polymer latex are added. The simulations<br />

were done <strong>in</strong> Luxembourg, while the experiments<br />

took place at E<strong>in</strong>dhoven University.<br />

By mix<strong>in</strong>g f<strong>in</strong>ely dispersed particles, so-called<br />

colloidal particles, of differ<strong>in</strong>g shapes and sizes<br />

<strong>in</strong> the medium, system-spann<strong>in</strong>g networks form:<br />

the prerequisite for electrically conductive<br />

composites.<br />

www.brunel.ac.uk<br />

20


21<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

POWER ELECTRONICS<br />

IGBT module tops the competition <strong>in</strong> current density: 4.9 A/cm² for 3-level<br />

<strong>in</strong>verters<br />

Semikron presents its newest M<strong>in</strong>iSKiiP IGBT power semiconductor module, which is now also available <strong>in</strong> 3-level<br />

topology.<br />

The new module boasts a rated current of 4.9 A/<br />

cm², the highest rated current per unit of area <strong>in</strong><br />

comparison to competitor products, and one<br />

phase leg per module, enabl<strong>in</strong>g the development of<br />

compact <strong>in</strong>verters with output power of up to 85 kVA.<br />

The M<strong>in</strong>iSKiiP is characterised by the fast and easy<br />

s<strong>in</strong>gle-screw assembly and therefore optimised for the<br />

efficient manufacture of 3-level solar <strong>in</strong>verters and UPS<br />

systems.<br />

The rated current per unit of area is up to twice that of<br />

other 3-level modules. S<strong>in</strong>ce no solid busbars are<br />

needed between the three phases/modules, more<br />

compact <strong>in</strong>verters can be made. The reverse voltage<br />

of the IGBTs and diodes used has been <strong>in</strong>creased to<br />

650 V to enable DC l<strong>in</strong>k voltages of 900 V for 480 V<br />

three-phase power applications typical <strong>in</strong> commercial<br />

or <strong>in</strong>dustrial sett<strong>in</strong>gs <strong>in</strong> the United States. Each module<br />

has a 3-level phase leg with sufficient space for ten<br />

power semiconductors each.<br />

Across the world, more than 15 million M<strong>in</strong>iSKiiP<br />

modules are <strong>in</strong> use <strong>in</strong> drives and frequency converters.<br />

The success of this module platform cont<strong>in</strong>ues <strong>in</strong> the<br />

new 3-level topology, which improves electrical<br />

efficiency and makes power converters more efficient.<br />

Thermal and electrical connection between the module<br />

and the heat s<strong>in</strong>k and the driver board is established<br />

with a s<strong>in</strong>gle screw or two screws for rated module<br />

currents of up to 150 A or 200 A, respectively. This<br />

means that solder equipment and time-consum<strong>in</strong>g<br />

solder<strong>in</strong>g processes are done away with <strong>in</strong> the<br />

assembly stage. For solar <strong>in</strong>verter output power of 60<br />

kVA and above, i.e. for rated current of 150 A and<br />

higher, modules with screw connections were<br />

previously used for the busbars. Thanks to M<strong>in</strong>iSKiiP<br />

200 A 3-level modules, the busbars can be replaced<br />

with cheaper PCBs <strong>in</strong> <strong>in</strong>verters with outputs of up to 85<br />

kVA. Former complex 8-screw connections have been<br />

reduced to simple 2-screw-assembly solutions.<br />

“Ow<strong>in</strong>g to the efficiency ga<strong>in</strong>, 3-level technology is set<br />

to become standard <strong>in</strong> solar <strong>in</strong>verters and UPS systems<br />

<strong>in</strong> the very near future,” comments Thomas Grasshoff,<br />

Head of International Product Management, referr<strong>in</strong>g<br />

to the trends on these markets. In the drives sector,<br />

M<strong>in</strong>iSKiiP modules have already ga<strong>in</strong>ed a strong<br />

foot<strong>in</strong>g thanks to their fast and easy assembly.<br />

The 3-level product range from Semikron covers rated<br />

currents of 20 A to 600 A: featur<strong>in</strong>g SEMITOP solder<br />

modules for up to 150 A, M<strong>in</strong>iSKiiP spr<strong>in</strong>g contact<br />

modules for up to 200 A and SKiM screw connection<br />

modules for up to 600 A.<br />

The new M<strong>in</strong>iSKiiP IGBT power semiconductor module<br />

(Courtesy of Semikron)<br />

www.powersystemsdesign.com<br />

Alpha Technologies debuts new UPS power solutions<br />

Alpha Technologies Ltd. <strong>in</strong>troduced the new FXM 350 and Micro 350 Un<strong>in</strong>terruptible Power Supply (UPS) products<br />

The latest addition to Alpha’s FXM family of UPS<br />

products, the FXM 350 is eng<strong>in</strong>eered to address<br />

a broad range of applications requir<strong>in</strong>g lower<br />

output power and smaller footpr<strong>in</strong>ts than the exist<strong>in</strong>g<br />

FXM 650, 1100 and 2000 models.<br />

"The FXM 650, 1100 and 2000 have been stalwart<br />

performers for a variety of critical applications across<br />

many <strong>in</strong>dustries," said William Huang, AC Portfolio<br />

Product Manager at Alpha. "The new FXM 350<br />

represents the lead<strong>in</strong>g ruggedized UPS <strong>in</strong> the Security<br />

market that supports both ac and dc loads. It simply<br />

offers the class lead<strong>in</strong>g performance our customers<br />

have come to expect from the larger FXM modules,<br />

but <strong>in</strong> a more compact and cost effective package."<br />

The new FXM 350 UPS Module features: flexible dual<br />

ac and dc output for multiple loads up to 350W; local<br />

or remote monitor<strong>in</strong>g and control via USB and SNMP<br />

communication; small footpr<strong>in</strong>t for wall, rack or<br />

enclosure mount<strong>in</strong>g; dependable operation <strong>in</strong> extreme<br />

operat<strong>in</strong>g environments; and powerful new firmware<br />

with enhanced features such as battery run time<br />

<strong>in</strong>formation.<br />

Also released is the Micro 350, Alpha’s latest outdoor<br />

UPS system that <strong>in</strong>tegrates the FXM 350 module <strong>in</strong> a<br />

NEMA 3R enclosure with batteries, an adaptor plate<br />

and an optional distribution panel. It provides reliable<br />

backup power for a wide range of applications,<br />

<strong>in</strong>clud<strong>in</strong>g security, access control, public utility and<br />

telecommunications.<br />

www.powerpulse.net<br />

Enecsys secures $41 million <strong>in</strong>vestment to accelerate its growth plan<br />

Enecsys has secured a further £25 million ($41 million) <strong>in</strong> equity f<strong>in</strong>anc<strong>in</strong>g to <strong>in</strong>vest <strong>in</strong> its growth plan.<br />

Enecsys was founded <strong>in</strong> 2003 and its patented<br />

technology was orig<strong>in</strong>ally developed at<br />

Cambridge University <strong>in</strong> the UK. Solar <strong>in</strong>verters<br />

convert the DC power produced by solar photovoltaic<br />

(PV) modules <strong>in</strong>to AC power for supply to the electricity<br />

grid. Enecsys micro <strong>in</strong>verters are <strong>in</strong>stalled on the rail<br />

beh<strong>in</strong>d solar modules, either one <strong>in</strong>verter per solar<br />

module or one for every two modules. The Enecsys<br />

micro <strong>in</strong>verter represents a breakthrough <strong>in</strong> <strong>in</strong>verter<br />

design for residential and commercial solar PV<br />

<strong>in</strong>stallations as its technology has, for the <strong>first</strong> time,<br />

elim<strong>in</strong>ated components that limit <strong>in</strong>verter life.<br />

Additionally the Enecsys micro <strong>in</strong>verter enables solar<br />

PV systems to harvest between 5% and 20% more<br />

energy; it makes plann<strong>in</strong>g and <strong>in</strong>stallation of PV<br />

systems easier and safer due to the elim<strong>in</strong>ation of high<br />

voltage DC wir<strong>in</strong>g, and it enhances system optimization<br />

by monitor<strong>in</strong>g the performance of each solar module.<br />

Enecsys has recently launched its products <strong>in</strong> Europe<br />

and North America and the latest f<strong>in</strong>anc<strong>in</strong>g has been<br />

arranged to facilitate substantial expected growth.<br />

Climate Change Capital Private Equity led this Series<br />

B equity f<strong>in</strong>anc<strong>in</strong>g with an <strong>in</strong>vestment of £11 million<br />

($18 million). The balance, £14 million ($23 million),<br />

was secured from the exist<strong>in</strong>g Enecsys <strong>in</strong>vestors,<br />

Well<strong>in</strong>gton Partners, NES Partners (formerly known<br />

as Bank<strong>in</strong>vest New Energy Solutions) and Good<br />

Energies, who together previously <strong>in</strong>vested £8.5<br />

million ($14.3 million) <strong>in</strong> Enecsys <strong>in</strong> a Series A f<strong>in</strong>anc<strong>in</strong>g<br />

<strong>in</strong> 2009. The latest f<strong>in</strong>anc<strong>in</strong>g round represents the<br />

largest private equity raise <strong>in</strong> the European cleantech<br />

sector so far this year.<br />

www.powersystemsdesign.com<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper


MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

<br />

<br />

<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper<br />

For 35 years, Plasma-Therm has been shr<strong>in</strong>k<strong>in</strong>g the<br />

limits of what is possible. Today, our Mask Etcher V ®<br />

produces at


23<br />

MAY 2011 issue n°112<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

YOLE LIFE<br />

O U R R E P O R T S<br />

Discover our latest reports<br />

Permanent Wafer<br />

Bond<strong>in</strong>g<br />

Permanent Wafer Bond<strong>in</strong>g<br />

Wafer Bond<strong>in</strong>g will be a Key Enabl<strong>in</strong>g Technology for Advanced Semiconductor Manufactur<strong>in</strong>g.<br />

The report will analyze <strong>in</strong> details the technical & economical evolution of the permanent wafer<br />

bond<strong>in</strong>g process. The wafer bond<strong>in</strong>g market is a very complex one cross<strong>in</strong>g different wafer sizes<br />

(from 2’’ to 12’’), different applications (Advanced Substrates) and different bond<strong>in</strong>g technologies<br />

(Adhesive, Anodic, Fusion, Direct Oxide, Eutectic, Glass Frit, Metal Diffusion).<br />

Released <strong>in</strong> May 2011 – For more <strong>in</strong>formation, feel free to contact David Jourdan (jourdan@yole.fr)<br />

Also available…<br />

MEMS Microphone<br />

Better communication through better listen<strong>in</strong>g.<br />

The mobile phone market is still the largest consumer of MEMS microphones. With the penetration of MEMS microphones <strong>in</strong> the iphone 4 and other smart<br />

phones, Yole Développement estimates rapid growth of the market <strong>in</strong> 2011-2016. By 2013, shipments will <strong>in</strong>crease to over 1 billion units.<br />

Released <strong>in</strong> May 2011<br />

Flip-Chip<br />

Understand<strong>in</strong>g the new requirements and technologies that will reshape the supply cha<strong>in</strong> of the world’s highest value package platform.<br />

Throughout this fi rst ever Yole Développement report on fl ip-chip technologies and markets, you will fi nd out how this market emerged almost from scratch<br />

15 years ago and turned <strong>in</strong>to a $16 billion market, and why we th<strong>in</strong>k that even though it is a large market by the figures and looks mature at <strong>first</strong> sight, we th<strong>in</strong>k<br />

that it is still <strong>in</strong> its growth phase, with major technology and application and supply cha<strong>in</strong> transformations loom<strong>in</strong>g ahead.<br />

Released <strong>in</strong> April 2011<br />

About Yole Développement<br />

Beg<strong>in</strong>n<strong>in</strong>g <strong>in</strong> 1998 with Yole Développement, we have grown to become a group of companies provid<strong>in</strong>g market research, technology analysis, strategy<br />

consult<strong>in</strong>g, media <strong>in</strong> addition to f<strong>in</strong>ance services. With a solid focus on emerg<strong>in</strong>g applications us<strong>in</strong>g silicon and/or micro manufactur<strong>in</strong>g Yole Développement<br />

group has expanded to <strong>in</strong>clude more than 40 associates worldwide cover<strong>in</strong>g MEMS and Microfluidics, Advanced Packag<strong>in</strong>g, Compound Semiconductors,<br />

Power Electronics, LED, and Photovoltaic. The group supports companies, <strong>in</strong>vestors and R&D organizations worldwide to help them understand markets<br />

and follow technology trends to develop their bus<strong>in</strong>ess.<br />

CONSULTING SERVICES<br />

• Market data, market research and market<strong>in</strong>g analysis<br />

• Technology analysis<br />

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MEDIA<br />

• Critical news, Bi-weekly: <strong>Micronews</strong>, the magaz<strong>in</strong>e<br />

• In-depth analysis & Quarterly Technology Magaz<strong>in</strong>es: MEMS Trends– 3D Packag<strong>in</strong>g – PV Manufactur<strong>in</strong>g – iLED – Power Dev'<br />

• Onl<strong>in</strong>e disruptive technologies website: www.i-micronews.com<br />

• Exclusive Webcasts<br />

• Live event with Market Briefi ngs<br />

CONTACTS<br />

For more <strong>in</strong>formation about :<br />

• Services : Jean-Christophe Eloy (eloy@yole.fr)<br />

• Reports: David Jourdan (jourdan@yole.fr)<br />

• Media : Sandr<strong>in</strong>e Leroy (leroy@yole.fr)<br />

Editorial Staff<br />

Board Members: Jean-Christophe Eloy & Jeff Perk<strong>in</strong>s - Media Activity, Editor <strong>in</strong> chief: Dr Eric<br />

Mounier - Editors: Alexandre Avron, Frédéric Breuss<strong>in</strong>, Arnaud Duteil, Barbara Jeol, Patrick Keat<strong>in</strong>g,<br />

Jerôme Mouly, Dr. Éric Mounier, Laurent Rob<strong>in</strong>, Dr. Philippe Roussel - Media & PR Manager: Sandr<strong>in</strong>e<br />

Leroy - VP New Media Development: Bill St<strong>in</strong>son - Assistant: Camille Favre - Production: K.Zen<br />

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• Collection of market & technology reports<br />

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• Component reverse eng<strong>in</strong>eer<strong>in</strong>g & cost<strong>in</strong>g analysis<br />

More <strong>in</strong>formation on www.yole.fr<br />

THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE<br />

Copyrights © Yole Développement SA. All rights reserved - Recycled paper

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