Main Memory Technology Direction - Micron

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IDD DD Impact IDD vs. <strong>Technology</strong> Idd (mA) 2500 2000 1500 1000 500 0 400 Mb/s 800 Mb/s DDR DDR2 DDR3 GDDR3 GDDR4 X16 1.33 Gb/s 1.6 Gb/s X32 2.5 Gb/s IDD4R IDD4W IDD7
Power Dissipation Trends Power 900.0E-03 800.0E-03 700.0E-03 600.0E-03 500.0E-03 400.0E-03 300.0E-03 200.0E-03 100.0E-03 000.0E+00 256Mb SDRAM512Mb DDR 1Gb DDR2 333 167 MHz 200 Mhz MHz • x16 devices at nominal VDD <strong>Technology</strong> 1Gb DDR3 1333 MHz 30.0E-03 25.0E-03 20.0E-03 15.0E-03 10.0E-03 5.0E-03 000.0E+00 P_IDD4 P_IDD2 Linear (P_IDD2) Linear (P_IDD4)
Page 2 and 3: Main Memory Technology Direction Ke
Page 4 and 5: DRAM Technology Trends
Page 6 and 7: Unit Interval (Bit-Time) (Bit Time)
Page 10 and 11: Voltage Scaling 7 6 5 4 3 2 1 0 199
Page 12 and 13: Industry Analyst DRAM Interface For
Page 14 and 15: Computing Customer Requirements
Page 16 and 17: What Computing Customers Care About
Page 18 and 19: Microsoft’s Microsoft s Vista Sys
Page 20 and 21: Windows Vista RTM Test Results Memo
Page 22 and 23: Vista Ready Boost C&P Lab Results W
Page 24 and 25: Dual-Die Dual Die Stacking Technolo
Page 26 and 27: Dual-Die Dual Die Photo Two die com
Page 28 and 29: Estimated WC power Using (1Gb) Data
Page 30 and 31: DDR2 to DDR3 Comparison Standard Fe
Page 32 and 33: DDR2 to DDR3 Comparison Standard Fe
Page 34 and 35: DDR2 to DDR3 Comparison Optional Fe
Page 36: © 2007 Microsoft Corporation. All

Main Memory Technology Direction - Micron

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