Darlington Transistor NPN - ON Semiconductor

BC517
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V CES 30 Vdc
Collector−Base Voltage V CB 40 Vdc
Emitter−Base Voltage V EB 10 Vdc
Collector Current − Continuous I C 1.0 Adc
Total Power Dissipation @ T A = 25°C
Derate above T A = 25°C
Total Power Dissipation @ T C = 25°C
Derate above T C = 25°C
P D 625
12
P D 1.5
12
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
COLLECTOR 1
BASE
2
EMITTER 3
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
T J , T stg −55 to +150 °C
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R JA 200 °C/W
Thermal Resistance, Junction−to−Case R JC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 1
2 2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
517
AYWW
A = Assembly Location
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping †
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BC517G
BC517RL1G
BC517ZL1G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 5
1 Publication Order Number:
BC517/D

BC517
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I C = 2.0 mAdc, I BE = 0)
V (BR)CES
30 − −
Vdc
Collector−Base Breakdown Voltage
(I C = 10 Adc, I E = 0)
Emitter−Base Breakdown Voltage
(I E = 100 Adc, I C = 0)
Collector Cutoff Current
(V CE = 30 Vdc)
Collector Cutoff Current
(V CB = 30 Vdc, I E = 0)
Emitter Cutoff Current
(V CB = 10 Vdc, I C = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I C = 20 mAdc, V CE = 2.0 Vdc)
Collector−Emitter Saturation Voltage
(I C = 100 mAdc, I B = 0.1 mAdc)
Collector−Emitter Saturation Voltage
(I C = 10 mAdc, V CE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I C = 10 mAdc, V CE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
2. f T = |h fe | • f test
R S
i n
(BR)CBO
40 − −
V (BR)EBO
10 − −
I CES
− − 500
I CBO
− − 100
I EBO
− − 100
h FE
30,000 − −
V CE(sat)
− − 1.0
V BE(on)
− − 1.4
f T
− 200 −
Vdc
Vdc
nAdc
nAdc
nAdc
−
Vdc
Vdc
MHz
e n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2

BC517
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
en, NOISE VOLTAGE (nV)
500
200
100
50
20
10
5.0
10
BANDWIDTH = 1.0 Hz
R S ≈ 0
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
100 A
I C = 1.0 mA
10 A
in, NOISE CURRENT (pA)
2.0
1.0
0.7
0.5
0.3
0.2
BANDWIDTH = 1.0 Hz
I C = 1.0 mA
0.1
0.07
0.05
100 A
10 A
0.03
0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
100
70
50
30
20
10
1.0
BANDWIDTH = 10 Hz TO 15.7 kHz
I C = 10 A
100 A
1.0 mA
2.0 5.0 10 20 50 100 200 500 1000
R S , SOURCE RESISTANCE (k)
Figure 4. Total Wideband Noise Voltage
NF, NOISE FIGURE (dB)
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
10
10 A
8.0
100 A
6.0
4.0 I C = 1.0 mA
2.0
0
1.0 2.0 5.0 10 20 50 100 200 500 1000
R S , SOURCE RESISTANCE (k)
Figure 5. Wideband Noise Figure
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3

BC517
SMALL−SIGNAL CHARACTERISTICS
C, CAPACITANCE (pF)
20
10
7.0
5.0
3.0
T J = 25°C
|hfe|, SMALL-SIGNAL CURRENT GAIN
4.0
2.0
1.0
0.8
0.6
0.4
V CE = 5.0 V
f = 100 MHz
T J = 25°C
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
V R , REVERSE VOLTAGE (VOLTS)
0.2
C ibo
C obo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
I C , COLLECTOR CURRENT (mA)
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
hFE, DC CURRENT GAIN
200k
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
T J = 125°C
25°C
-55°C
2.0k
5.0 7.0 10 20 30 50 70 100 200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V CE = 5.0 V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T J = 25°C
2.5
I C = 10 mA 50 mA 250 mA 500 mA
2.0
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
I B , BASE CURRENT (A)
Figure 9. Collector Saturation Region
V, VOLTAGE (VOLTS)
1.6
1.4
1.2
1.0
0.8
0.6
5.0
T J = 25°C
V BE(sat) @ I C /I B = 1000
V BE(on) @ V CE = 5.0 V
V CE(sat) @ I C /I B = 1000
7.0 10 20 30 50 70 100 200 300 500
I C , COLLECTOR CURRENT (mA)
R θ V, TEMPERATURE COEFFICIENTS (mV/ ° C)
-1.0
-2.0
-3.0
-4.0
-5.0
*APPLIES FOR I C /I B ≤ h FE /3.0
*R VC FOR V CE(sat)
25°C TO 125°C
-55°C TO 25°C
VB FOR V BE
25°C TO 125°C
-55°C TO 25°C
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4

BC517
()
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05 SINGLE PULSE
SINGLE PULSE
Z JC(t) = r(t) • R JC T J(pk) - T C = P (pk) Z JC(t)
Z JA(t) = r(t) • R JA T J(pk) - T A = P (pk) Z JA(t)
0.01
0.1
0.2
0.5
1.0
2.0 5.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0k
700
500
300
200
100
70
50
30
20
10
0.4
T A = 25°C
T C = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
1.0 s
100 s
0.6 1.0 2.0 4.0 6.0 10 20 40
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE A
P P
t P
t 1
1/f
DUTYCYCLE t1f t 1
tP
PEAK PULSE POWER = P P
P P
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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5

BC517
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
R
A
N
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
INCHES MILLIMETERS
PLANE K
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X
D
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G
J 0.015 0.020 0.39 0.50
H
J
K 0.500 --- 12.70 ---
V
C
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X
R 0.115 --- 2.93 ---
1 N
V 0.135 --- 3.43 ---
R
T
SEATING
PLANE
P
G
A
X X
V
1
B
K
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 ---
N 2.04 2.66
P 1.50 4.00
R 2.93 ---
V 3.43 ---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC517/D