power management product selection guide - International Rectifier
power management product selection guide - International Rectifier
power management product selection guide - International Rectifier
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IGBTs, Discrete Power Supply | PRODUCT FAMILIES<br />
Features at a Glance<br />
• NPT technology, positive<br />
temperature coefficient<br />
• Lower VCE(SAT)<br />
• Lower parasistic capacitances<br />
• Minimal tail current<br />
• HEXFRED ultra-fast soft recovery<br />
Co-Pack diode<br />
• Tighter distribution of parameters<br />
• Higher reliability<br />
The IR Advantage<br />
• Parallel operation for higher<br />
current applications<br />
• Lower conduction losses and<br />
switching losses<br />
• Higher switching frequency up<br />
to 150kHz<br />
Applications<br />
• Telecom and server SMPS<br />
• PFC and ZVS SMPS circuits<br />
• Uninterruptible <strong>power</strong> supplies<br />
• Consumer electronics <strong>power</strong> supplies<br />
WARP2 series of Thin Wafer<br />
IGBTs for High Frequency<br />
SMPS Applications<br />
The WARP2 series of 600V devices (20A,<br />
35A and 50A) in Non Punch Through<br />
(NPT) IGBT family are targeted towards<br />
high frequency SMPS applications. With<br />
a small tail current and a low turn off<br />
energy Eoff, the devices enable the converter<br />
to operate up to 150kHz, the range<br />
currently dominated by Power MOSFETS.<br />
All WARP2 IGBTs are offered with co-pack HEXFRED diodes, which offer excellent reverse<br />
recovery characteristics, much better than the integral diodes in a Power MOSFET.<br />
The improvement in switching performance, combined with the positive thermal coefficient<br />
characteristics and the lower gate turn-on charge Qg, allows these devices to operate efficiently<br />
up to 150KHz, while offering excellent current sharing properties when operated in<br />
parallel, like <strong>power</strong> MOSFETS. Unlike Power MOSFETs, the conduction losses of these IGBTs<br />
remain essentially flat.<br />
These features make the WARP2 IGBTs an excellent choice. in SMPS applications for medium<br />
and large <strong>power</strong> SMPS designs in Telecom and Computer systems.<br />
System Efficiency Comparison in a 2000W Power Supply<br />
Efficiency<br />
98.0%<br />
97.8%<br />
97.6%<br />
97.4%<br />
97.2%<br />
97.0%<br />
96.8%<br />
96.6%<br />
96.4%<br />
97.8%<br />
97.6%<br />
97.4%<br />
97.4% 97.4%<br />
97.4%<br />
96.8%<br />
96.0%<br />
96.8%<br />
TEST CONDITIONS<br />
Temp: 25°C<br />
AC line: 180V<br />
Frequency:80 kHz<br />
96.4%<br />
Voltage Drop vs. Current<br />
Voltage Drop vs. Current<br />
V DSon & V CEon @ 100°C vs. Drain/Collector Current<br />
10V<br />
PT IGBT<br />
WARP2 NPT IGBT<br />
POWER MOSFET<br />
Voltage Drop (V)<br />
96.2%<br />
96.0%<br />
95.8%<br />
95.6%<br />
400W<br />
PT IGBT<br />
WARP2 NPT IGBT<br />
POWER MOSFET<br />
95.8%<br />
95.7%<br />
700W 800W 900W 1000W 1100W 1200W 1300W 1400W 1500W 1600W 1700W 1800W 1900W 2000W 2100W<br />
500W 600W<br />
Output Power<br />
1V<br />
0A 5A 10A 15A 20A 25A 30A 35A<br />
Drain/Collector Current<br />
WARP2 IGBT<br />
Part Number<br />
Package V CES I C at 25°C V CE(on) typ. Co-Pack Diode Qg<br />
IRGP50B60PD1 TO-247 600V 50A 2.0V@33A 15A 205nC<br />
IRGP35B60PD TO-247 600V 35A 1.85V@22A 15A 160nC<br />
IRGP20B60PD TO-247 600V 20A 2.05V@13A 8A 68nC<br />
IRGB20B60PD1 TO-220 600V 20A 2.05V@13A 4A 68nC<br />
www.irf.com INTERNATIONAL RECTIFIER / POWER MANAGEMENT SELECTION GUIDE 35
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