KSP10 NPN Epitaxial Silicon Transistor - ClassicCMP

KSP10
KSP10
VHF/UHF transistor
NPN Epitaxial Silicon Transistor
1
TO-92
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T a =25°C unless otherwise noted
Symbol Parameter Value Units
V CBO Collector-Base Voltage 30 V
V CEO Collector-Emitter Voltage 25 V
V EBO Emitter-Base Voltage 3.0 V
P C Collector Power Dissipation (T a =25°C) 350 mW
Derate above 25°C 2.8 mW/°C
P C Collector Power Dissipation (T C =25°C) 1.0 W
Derate above 25°C 8.0 W/°C
T J Junction Temperature 150 °C
T STG Storage Temperature -55~150 °C
Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W
Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
Electrical Characteristics T a =25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV CBO Collector-Base Breakdown Voltage I C =100µA, I E =0 30 V
BV CEO Collector-Emitter Breakdown Voltage I C =1mA, I B =0 25 V
BV EBO Emitter-Base Breakdown Voltage I E =10µA, I C =0 3.0 V
I CBO Collector Cut-off Current V CB =25V, I E =0 100 nA
I EBO Emitter Cut-off Current V EB =2V, I C =0 100 nA
h FE DC Current Gain V CE =10V, I C =4mA 60
V CE (sat) Collector-Emitter Saturation Voltage I C =4mA, I B =0.4mA 0.5 V
V BE (on) Base-Emitter On Voltage V CE =10V, I C =4mA 0.95 V
f T Current Gain Bandwidth Product V CE =10V, I C =4mA, f=100MHz 650 MHz
C ob Output Capacitance V CB =10V, I E =0, f=1MHz 0.7 pF
C rb Collector Base Feedback Capacitance V CB =10V, I E =0, f=1MHz 0.35 0.65 pF
C c·rbb´ Collector Base Time Constant V CB =10V, I C =4mA,
f=31.8MHz
9.0 ps
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Typical Characteristics
KSP10
hFE, DC CURRENT GAIN
1000
100
10
VCE = 10V
1
1 10 100 1000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
1000
100
VCE(sat)
VBE(sat)
IC = 10 IB
10
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10000
1000
100
VCE = 10V
f=100MHz
10
1 10 100
IC[mA], COLLECTOR CURRENT
yib[ ], INPUT ADMITTANCE
Ω
140
120
100
80
gib
60
-bib
40
20
100 1000
f[MHz], FREQUENCY
Figure 3. Current Gain Bandwidth Product
Figure 4. Rectangular Form
yob[ ], OUTPUT ADMITTANCE
Ω
0
-10
-20
-30
-40
-50
1000MHz
700
400
200 100
-60
0 10 20 30 40 50 60 70 80 90
yfb[ ], FORWARD TRANSFER ADMITTANCE
Ω
100
90
80
70
60
50
40
30
20
10
0
-10
-20
-gfb
-30
100 1000
bfb
gib[ ]
Ω
f[MHz], FREQUENCY
Figure 5. Polar Form
Figure 6. Rectangular Form
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Typical Characteristics (Continued)
KSP10
90
6
jbfb[ ],
Ω
80
70
60
50
40
30
20
100
200
400
600
700
1000MHz
yfb[ ],
Ω
REVERSE TRANSFER ADMITTANCE
5
4
3
2
1
-brb
10
70 60 50 40 30 20 10 0 -10 -20 -30
0
100 1000
gfb[ ]
Ω
f[MHz], FREQUENCY
Figure 7. Polar Form
Figure 8. Rectangular Form
3
10
2
9
jbrb[ ],
Ω
1
0
-1
-2
-3
-4
100
200
400
700
1000MHz
-5
-2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0
yob[ ], OUTPUT ADMITTANCE
Ω
8
7
6
5
4
3
2
1
0
100 1000
bob
gob
gfb[ ]
Ω
f[MHz], FREQUENCY
Figure 9. Polar Form
Figure 10. Rectangular Form
16
14
12
jbob[ ],
Ω
10
8
6
700
1000MHz
4
2
0
400
200
100
0 2 4 6 8
gob[ ]
Ω
Figure 11. Polar Form
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

Package Dimensions
KSP10
TO-92
4.58 +0.25
–0.15
3.86MAX
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.02 ±0.10
0.38 +0.10
–0.05
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
(0.25) 14.47 ±0.40
4.58 ±0.20
0.38 +0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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©2002 Fairchild Semiconductor Corporation Rev. I1