FactSheet HELiA - Roth & Rau AG

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Texturing PECVD 1 Back Side i/n PECVD 2 Front Side i/p PVD TCO Front/ Back Side Back Contact Screen Printing Curing Cell Tester & Sorter Heterojunction Technology process The Silicon heterojunction technology is an appealing concept that combines thin amorphous silicon layers with monocrystalline silicon wafers to realize cell efficiencies above 20%. The simple structure of the HJT cells needs less processing steps compared to conventional cell designs. The excellent surface passivation of the a-Si:H layer results in high cell efficiency potential. The superior temperature coefficient of T C = -0.27%/K results in a higher energy yield at operating conditions. Low temperature processing (
Texturing PECVD 1 Back Side i/n PECVD 2 Front Side i/p PVD TCO Front/ Back Side Back Contact Screen Printing Curing Cell Tester & Sorter Heterojunction Technology process Applications Heterojunction technology applying intrinsic, p- and n-doped a-Si:H layers using PECVD techniques. TCO and metal layers are sputtered in a PVD process. Platform The Roth & Rau HELiA platforms (PECVD and PVD) represent the key devices for processing of heterojunction solar cells. The PECVD system is capable of depositing uniform, well controlled, thin layers of intrinsic and doped a-Si:H onto a textured Si-wafer surface. The PVD system provides for front- and backside deposition without flipping the wafer. Both systems are designed for a throughput of 2400 w/h. The HELiA system platform is based on a modular design, similar to the well known SiNA ® and MAiA ® systems by Roth & Rau. HELiA PECVD - High quality a-Si:H and p/n-Si:H deposition This system is based on a modular design and, therefore, it can be configured to the specific customer needs. The layers are deposited with a PECVD process, powered by a direct RF-plasma. The high quality of the amorphous silicon layers enables the tool also for processing advanced high efficiency cells such as cells with a heterojunction rear emitter in combination with a diffused front surface field on n-type silicon. It can also be used to realize amorphous silicon backside passivated cells with a diffused emitter on p-type silicon. HELiA PVD - Large area high throughput sputtering at lowest costs This system has been developed for deposition of TCO and metal layers by sputter deposition. The tool design provides for face-up and face-down deposition – front and back side can be coated without flipping the wafer. Rotary magnetrons are used for high target utilization, good uniformity and high throughput at simultaneously low production costs. Due to its modular concept various TCO layers, metal layers and layer stacks can be deposited and make the tool applicable for the production of different solar cell concepts. Front Side Back Side
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FactSheet HELiA - Roth & Rau AG

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