ROUTE60â¢: a new vertical probing technology
ROUTE60â¢: a new vertical probing technology
ROUTE60â¢: a new vertical probing technology
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Raffaele Vallauri<br />
STMicroelectronics<br />
ROUTE60: a <strong>new</strong><br />
<strong>vertical</strong> <strong>probing</strong><br />
<strong>technology</strong><br />
June 3-6, 2007<br />
San Diego, CA USA
Authors<br />
R. Vallauri – STMicroelectronics<br />
M. Gervasoni – STMicroelectronics<br />
R. Crippa – Technoprobe<br />
S. Lazzari – Technoprobe<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
2
Table of contents<br />
ROUTE60 Technology Introduction<br />
Qualification on a 80 μm linear pitch, automotive<br />
product at three temperatures<br />
Production results on 65 μm linear pitch devices<br />
Scrub depth analysis at ROOM T and at +125°C<br />
Evaluations of <strong>probing</strong> on pad over active areas<br />
Conclusions<br />
Follow-On Work<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
3
Technology Introduction - Needles<br />
Buckling Beam style: higher possibility to control<br />
the gram force<br />
Needle section equivalent to 3 mils ∅ wire:<br />
Robust mechanics<br />
High current capability<br />
Flattened section of needles<br />
allows fine Pitch applications<br />
down to 60μm<br />
Patented<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
4
Technology Introduction - Design<br />
Gram Force adjustable between 5 to 8 g<br />
Small scrub action proportional to OD<br />
Tight Alignment: ±10 μm<br />
Planarity range : 40 μm<br />
Temperature range: -45 ÷ +150°C<br />
Hard Ceramic:<br />
CTE 3.3 ppm/°C close to Silicon<br />
Low needles friction<br />
Needles Assembly: no template required, easy tip<br />
replacement<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
5
Qualification on a 80μm pitch product<br />
Embedded Flash Microcontroller for automotive<br />
market<br />
Small pad opening (65μm × 70μm)<br />
Up to 4 EWS Tests, 3 testing temps – KGD flow<br />
Small <strong>probing</strong> process margins with present<br />
Epoxy probe cards mainly @ HOT temp:<br />
Passivation breakage<br />
Large scrub marks impacted area<br />
Benchmark with Epoxy probe cards<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
6
Product test flow description<br />
Package Flow:<br />
EWST1 @ Room T -<br />
Vertical //32<br />
Bake (24 h)<br />
EWST2 @ Room T -<br />
Vertical //32<br />
EWST3 @ Room T -<br />
Epoxy //4<br />
KGD Flow:<br />
EWST1 @ Room T -<br />
Vertical //32<br />
Bake (24 h)<br />
EWST2 @ + 125°C -<br />
Vertical //16<br />
EWST3 @ + 125°C -<br />
Epoxy //4<br />
EWST4 @ - 40°C -<br />
Epoxy //4<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
7
Probe Cards Pictures<br />
Epoxy<br />
Vertical<br />
ROUTE60<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
8
Electrical results @ ROOM T (EWS3)<br />
100%<br />
90%<br />
80%<br />
70%<br />
60%<br />
50%<br />
40%<br />
30%<br />
20%<br />
10%<br />
0%<br />
88,8% 88,9%<br />
1,4% 2,4%<br />
0,1% 0,9%<br />
ROUTE60<br />
Epoxy<br />
Retest rate: -1.0%<br />
Gain rate: -0.8%<br />
Yield<br />
Retest<br />
Gain<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
9
Electrical results @ +125°C (EWS3)<br />
100%<br />
90%<br />
80%<br />
70%<br />
95,3%<br />
95,1%<br />
60%<br />
50%<br />
40%<br />
30%<br />
Yield<br />
Retest<br />
Gain<br />
20%<br />
10%<br />
0%<br />
2,0% 3,6%<br />
0,6%<br />
1,5%<br />
ROUTE60<br />
Epoxy<br />
Retest rate: -1.6%<br />
Gain rate: -0.9%<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
10
Electrical results @ -40°C (EWS4)<br />
100%<br />
90%<br />
80%<br />
70%<br />
97,8%<br />
96,2%<br />
60%<br />
50%<br />
40%<br />
30%<br />
Yield<br />
Retest<br />
Gain<br />
20%<br />
10%<br />
0%<br />
1,3% 0,6%<br />
3,0%<br />
ROUTE60<br />
Epoxy<br />
2,0%<br />
Retest rate: -1.7%<br />
Gain rate: -1.4%<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
11
Mechanical Results @ +125°C: ROUTE60<br />
CENTER<br />
SCRUB<br />
VITRIF<br />
X<br />
Y<br />
L<br />
W<br />
L<br />
W<br />
TIME 0<br />
AGEING<br />
UL N/A N/A 32,5 32,5 N/A N/A<br />
LL N/A N/A 10 10 2 2<br />
AVE 33,0 36,0 13,7 14,5 29,4 26<br />
STDEV 4,6 2,5 1,5 1,1 2,8 3,5<br />
C P N/A N/A 2,5 3,4 N/A N/A<br />
C PK<br />
AVE 32 34,3 13,8 14,1 27,6 24,9<br />
STDEV 3,2 2,4 1,6 1,5 2,8 3,4<br />
C P N/A N/A 2,3 2,5 N/A N/A<br />
C PK<br />
N/A N/A N/A N/A 3,3 2,3<br />
N/A N/A N/A N/A 3,0 2,2<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
12
Scrub mark pictures @ +125°C<br />
Epoxy<br />
Damaged Area: 9.4%<br />
ROUTE60<br />
Damaged Area: 4.1%<br />
PAD DAMAGE is largely reduced using <strong>vertical</strong><br />
probe cards: more than 50% of reduction<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
13
65μm Pitch Product Vehicle Results<br />
Small pad opening (58μm × 71μm)<br />
Up to 2 EWS Tests, ROOM T, //8<br />
Small <strong>probing</strong> process margins with Epoxy<br />
probe cards :<br />
Passivation breakage<br />
Large scrub marks impacted area<br />
Contact issues<br />
Benchmark with Epoxy probe cards<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
14
Electrical results after EWS1 and EWS2<br />
100%<br />
95%<br />
Yield% (EWS1+EWS2)<br />
90%<br />
85%<br />
80%<br />
75%<br />
70%<br />
1<br />
3<br />
5<br />
7<br />
9<br />
June 3-6, 2007<br />
EPOXY<br />
11<br />
13<br />
15<br />
17<br />
19<br />
Lots<br />
ROUTE60<br />
Epoxy: 88%<br />
ROUTE60: 96%<br />
IEEE SW Test Workshop<br />
21<br />
23<br />
25<br />
27<br />
29<br />
31<br />
33<br />
Yield<br />
Avg<br />
15
Scrub mark pictures<br />
ROUTE60 on 58×65 μm pads<br />
at 65 μm pitch<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
16
Mechanical Results<br />
Alignment:<br />
Planarity:<br />
Align (μm)<br />
16<br />
14<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
0 kTD 130 kTD<br />
Plan (μ m)<br />
25<br />
20<br />
15<br />
10<br />
5<br />
0<br />
-5<br />
-10<br />
-15<br />
-20<br />
-25<br />
0 KTD 130 KTD<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
17
Evaluations on pads over active areas<br />
14<br />
12<br />
Gram Force Cobra vs. ROUTE60<br />
Gram Force<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
Cobra 2.5 mils<br />
Cobra 3 mils<br />
Route60 (Fmax=5.5g)<br />
Route60 (Fmax=6.5g)<br />
Route60 (Fmax=8g)<br />
0 50 100 150 200<br />
OD (μm)<br />
Gram Force adjustable between 5 to 8 g<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
18
Scrub depth analysis @ ROOM T – 1TD<br />
0,8<br />
0,7<br />
Scrub depth (µm)<br />
0,6<br />
0,5<br />
0,4<br />
0,3<br />
0,2<br />
0,1<br />
0<br />
1 TD – 8g PH<br />
50 60 70 80 90 100 110 120 130<br />
Overdrive (µm)<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
19
Scrub depth analysis @ +125°C – 9 TDs<br />
6.5 g PH – Average scrub depth : 1.30 µm<br />
5 g PH – Average scrub depth : 1.15 µm<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
20
6M2T pad over active<br />
Bonding<br />
point<br />
Probing<br />
point<br />
C<br />
O<br />
B<br />
E<br />
D<br />
G<br />
E<br />
M6<br />
M5<br />
M4<br />
M3<br />
M2<br />
M1<br />
BPO: 59 x 123µm<br />
No cracks observed till 125 μm X 6 TDs @ ROOM T<br />
with both 8g and 6.5g probe heads<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
21
3M0T pad over active area<br />
Bonding<br />
point<br />
Probing<br />
point<br />
BPO<br />
65μm x 108μm<br />
M3 pad<br />
Alucap<br />
M3 rails<br />
No cracks observed with 8 g probe head till:<br />
100 μm OD × 9 TDs (6 @ ROOM T + 3 @ +150°C)<br />
125 μm OD × 6 TDs (4 @ ROOM T + 2 @ +150°C)<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
22
Conclusions<br />
ROUTE60 is the first <strong>vertical</strong> <strong>probing</strong><br />
<strong>technology</strong> successfully released to production<br />
in ST, down to 65 μm pitch<br />
The benchmark with Epoxy probe cards showed:<br />
Better electrical contact<br />
Lower pad area damage<br />
The possibility to probe on active areas playing on the<br />
gram force<br />
This <strong>technology</strong> seems very promising to probe<br />
at 60 μm pitch and on low-k dielectrics<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
23
Follow-on work<br />
1. Probing:<br />
Automotive products, with up to 3 EWS Test<br />
and up to + 125°C / + 150°C<br />
Copper metals and Low-k dielectrics<br />
Probing area down to 50 × 50 μm<br />
2. Evaluations at lower pitch, down to 60μm:<br />
Life test in progress on test cards at +125 °C<br />
3. On-line cleaning optimization<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
24
Acknowledgements<br />
A special thanks to:<br />
ST Castelletto EWS Engineering Team<br />
ST Rousset EWS Engineering Team<br />
ST FTM EWS Europe Organization<br />
ST FTM R&D Agrate<br />
ST Automotive Product Group<br />
ST Corporate Package Automation<br />
June 3-6, 2007<br />
IEEE SW Test Workshop<br />
25