Datasheet / Datenblatt IK#50N65F5
Datasheet / Datenblatt IK#50N65F5
Datasheet / Datenblatt IK#50N65F5
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Highspeedswitchingseriesfifthgeneration<br />
IKW50N65F5<br />
1<br />
C,CAPACITANCE[pF]<br />
1E+4<br />
1000<br />
100<br />
10<br />
Ciss<br />
Coss<br />
Crss<br />
1<br />
0 5 10 15 20 25 30<br />
VCE,COLLECTOR-EMITTERVOLTAGE[V]<br />
Figure 17. Typicalcapacitanceasafunctionof<br />
collector-emittervoltage<br />
(VGE=0V,f=1MHz)<br />
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]<br />
0.1<br />
0.01<br />
D=0.5<br />
0.001<br />
1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br />
tp,PULSEWIDTH[s]<br />
0.2<br />
0.1<br />
0.05<br />
0.02<br />
0.01<br />
single pulse<br />
i: 1 2<br />
3<br />
ri[K/W]: 0.1621884 0.2278266 0.109985<br />
τi[s]: 8.6E-4 0.01112208 0.09568113<br />
Figure 18. IGBTtransientthermalresistance<br />
(D=tp/T)<br />
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]<br />
1<br />
0.1<br />
0.01<br />
D=0.5<br />
0.001<br />
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br />
tp,PULSEWIDTH[s]<br />
0.2<br />
0.1<br />
0.05<br />
0.02<br />
0.01<br />
single pulse<br />
i: 1 2 3<br />
4<br />
ri[K/W]: 0.4131024 0.4494995 0.4867563 0.1506418<br />
τi[s]: 1.4E-4 1.3E-3 0.01007841 0.09232929<br />
Figure 19. Diodetransientthermalimpedanceasa<br />
functionofpulsewidth<br />
(D=tp/T)<br />
trr,REVERSERECOVERYTIME[ns]<br />
130<br />
120<br />
110<br />
100<br />
90<br />
80<br />
70<br />
60<br />
50<br />
40<br />
Tj=25°C, IF = 25A<br />
Tj=150°C, IF = 25A<br />
30<br />
500 600 700 800 900 1000 1100 1200 1300 1400 1500<br />
diF/dt,DIODECURRENTSLOPE[A/µs]<br />
Figure 20. Typicalreverserecoverytimeasafunction<br />
ofdiodecurrentslope<br />
(VR=400V)<br />
12<br />
Rev.1.1,2012-11-09
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