Datasheet / Datenblatt IK#50N65F5

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Highspeedswitchingseriesfifthgeneration IKW50N65F5 Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 56.0 Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 40.0 27.0 Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp=10µs,D
Highspeedswitchingseriesfifthgeneration IKW50N65F5 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage Diode forward voltage VCEsat VF VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C VGE=0V,IF=27.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - - - - - - - 1.60 1.80 1.90 1.45 1.40 1.40 - - 2.10 - - 1.80 - - 40.0 4000.0 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S V V µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies - 3000 - Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 65 - Reverse transfer capacitance Cres - 11 - Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case QG VCC=520V,IC=50.0A, VGE=15V pF - 120.0 - nC LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad,atTvj=25°C Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic Turn-on delay time td(on) Tvj=25°C, - 21 - ns Rise time VCC=400V,IC=25.0A, tr - 15 - ns VGE=0.0/15.0V, Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH, - 175 - ns Fall time Cσ=30pF tf - 18 - ns Lσ,CσfromFig.E Turn-on energy Eon Energy losses include “tail” and - 0.49 - mJ Turn-off energy Eoff diode reverse recovery. - 0.16 - mJ Total switching energy Ets - 0.65 - mJ 5 Rev.1.1,2012-11-09
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Datasheet / Datenblatt IK#50N65F5

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