Datasheet / Datenblatt IK#50N65F5

IGBT
Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwith
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQg
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
G
E
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
1 2
3
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW50N65F5 650V 50A 1.6V 175°C K50F655 PG-TO247-3
2
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
Maximumratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC 80.0
56.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IF 40.0
27.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp=10µs,D

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter Symbol Conditions
Value
min. typ. max.
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage
Diode forward voltage
VCEsat
VF
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=27.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
-
-
-
-
1.60
1.80
1.90
1.45
1.40
1.40
-
-
2.10
-
-
1.80
-
-
40.0
4000.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
V
V
µA
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter Symbol Conditions
Value
min. typ. max.
Unit
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 65 -
Reverse transfer capacitance Cres - 11 -
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
QG
VCC=520V,IC=50.0A,
VGE=15V
pF
- 120.0 - nC
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad,atTvj=25°C
Parameter Symbol Conditions
Value
min. typ. max.
Unit
IGBTCharacteristic
Turn-on delay time td(on) Tvj=25°C,
- 21 - ns
Rise time VCC=400V,IC=25.0A,
tr - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH,
- 175 - ns
Fall time Cσ=30pF
tf - 18 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.49 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.16 - mJ
Total switching energy Ets - 0.65 - mJ
5
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
Turn-on delay time td(on) Tvj=25°C,
- 19 - ns
Rise time VCC=400V,IC=6.0A,
tr - 4 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH,
- 195 - ns
Fall time Cσ=30pF
tf - 10 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.11 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.04 - mJ
Total switching energy Ets - 0.15 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C,
- 52 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.55 - µC
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/µs
- 16.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -450 - A/µs
Diode reverse recovery time trr Tvj=25°C,
- 32 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.26 - µC
IF=6.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/µs
- 13.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -1619 - A/µs
SwitchingCharacteristic,InductiveLoad,atTvj=150°C
Parameter Symbol Conditions
Value
min. typ. max.
Unit
IGBTCharacteristic
Turn-on delay time td(on) Tvj=150°C,
- 20 - ns
Rise time VCC=400V,IC=25.0A,
tr - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH,
- 202 - ns
Fall time Cσ=30pF
tf - 3 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.68 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.21 - mJ
Total switching energy Ets - 0.89 - mJ
Turn-on delay time td(on) Tvj=150°C,
- 18 - ns
Rise time VCC=400V,IC=6.0A,
tr - 5 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH,
- 245 - ns
Fall time Cσ=30pF
tf - 12 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.18 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.06 - mJ
Total switching energy Ets - 0.24 - mJ
6
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr Tvj=150°C,
- 81 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 1.24 - µC
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/µs
- 22.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -340 - A/µs
Diode reverse recovery time trr Tvj=150°C,
- 46 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.60 - µC
IF=6.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/µs
- 19.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -825 - A/µs
7
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
300
100
270
240
IC,COLLECTORCURRENT[A]
10
1
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Ptot,POWERDISSIPATION[W]
210
180
150
120
90
60
30
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
90
150
80
135
70
120
VGE=20V
IC,COLLECTORCURRENT[A]
60
50
40
30
20
IC,COLLECTORCURRENT[A]
105
90
75
60
45
30
18V
15V
12V
10V
8V
7V
6V
5V
10
15
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
150
135
150
140
130
Tj=25°C
Tj=150°C
IC,COLLECTORCURRENT[A]
120
105
90
75
60
45
VGE=20V
18V
15V
12V
10V
8V
7V
6V
IC,COLLECTORCURRENT[A]
120
110
100
90
80
70
60
50
40
30
5V
30
15
20
10
0
0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
IC=12,5A
IC=25A
IC=50A
t,SWITCHINGTIMES[ns]
1000
100
10
td(off)
tf
td(on)
tr
0.50
0 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
9
1
0 30 60 90 120 150
IC,COLLECTORCURRENT[A]
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
1000
td(off)
tf
td(on)
tr
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
100
10
t,SWITCHINGTIMES[ns]
100
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
1
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
typ.
min.
max.
E,SWITCHINGENERGYLOSSES[mJ]
11
10
9
8
7
6
5
4
3
2
1
Eoff
Eon
Ets
1.0
0 25 50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
10
0
0 30 60 90 120 150
IC,COLLECTORCURRENT[A]
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
2.50
1.0
Eoff
Eoff
2.25
Eon
Ets
0.9
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
2.00
1.75
1.50
1.25
1.00
0.75
0.50
E,SWITCHINGENERGYLOSSES[mJ]
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.25
0.1
0.00
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
0.0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
E,SWITCHINGENERGYLOSSES[mJ]
1.2
1.0
0.8
0.6
0.4
0.2
Eoff
Eon
Ets
VGE,GATE-EMITTERVOLTAGE[V]
16
14
12
10
8
6
4
2
130V
520V
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
11
0
0 20 40 60 80 100 120
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=50A)
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
1
C,CAPACITANCE[pF]
1E+4
1000
100
10
Ciss
Coss
Crss
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
0.1
0.01
D=0.5
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
0.2
0.1
0.05
0.02
0.01
single pulse
i: 1 2
3
ri[K/W]: 0.1621884 0.2278266 0.109985
τi[s]: 8.6E-4 0.01112208 0.09568113
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1
0.1
0.01
D=0.5
0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
0.2
0.1
0.05
0.02
0.01
single pulse
i: 1 2 3
4
ri[K/W]: 0.4131024 0.4494995 0.4867563 0.1506418
τi[s]: 1.4E-4 1.3E-3 0.01007841 0.09232929
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
trr,REVERSERECOVERYTIME[ns]
130
120
110
100
90
80
70
60
50
40
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
30
500 600 700 800 900 1000 1100 1200 1300 1400 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
1.5
1.4
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
25
23
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
Qrr,REVERSERECOVERYCHARGE[µC]
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Irr,REVERSERECOVERYCURRENT[A]
21
19
17
15
13
11
9
0.4
7
0.3
500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
5
500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
0
-50
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
81
72
Tj=25°C
Tj=150°C
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-100
-150
-200
-250
-300
-350
-400
IF,FORWARDCURRENT[A]
63
54
45
36
27
18
-450
9
-500
500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
13
0
0.0 0.5 1.0 1.5 2.0 2.5
VF,FORWARDVOLTAGE[V]
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
2.0
1.8
IF=13,5A
IF=27A
IF=54A
VF,FORWARDVOLTAGE[V]
1.6
1.4
1.2
1.0
0.8
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
14
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
PG-TO247-3
15
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
t
16
Rev.1.1,2012-11-09

Highspeedswitchingseriesfifthgeneration
IKW50N65F5
RevisionHistory
IKW50N65F5
Revision:2012-11-09,Rev.1.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet
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InfineonTechnologiesAG
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©2012InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
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Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
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and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
17
Rev.1.1,2012-11-09