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High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

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Planar SACM/SACGM <strong>APD</strong><br />

• InGaAs/InP Two-step<br />

MOCVD<br />

• Planar Structure<br />

• Etch and Regrowth Charge<br />

and Multiplication Region<br />

• Diffusion controlled<br />

Multiplication Layer (s<strong>in</strong>gle<br />

Diffusion or Well Etch<strong>in</strong>g-<br />

Diffusion)<br />

• Xd ~ 0.2-0.4 µm<br />

• GB product = 122 GHz<br />

• Noise Ratio k~0.45<br />

• No Implant<br />

tcharge<br />

n-Metal AR SiO 2<br />

p+ InP<br />

Xj<br />

n- InP Multiplication<br />

n InP Charge<br />

Grad<strong>in</strong>g Layer<br />

n InGaAs<br />

n- InGaAs Absorption<br />

n- InP Buffer<br />

n+ InP Substrate<br />

Xd<br />

tmesa<br />

tInGaAs<br />

tBuffer<br />

WOCC-2005

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