High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...
Planar Separate Absorption, Multiplication (SAM) APD Structure p-metal SiNx layer P+ Diffusion Guard Ring n- InP cap layer n+ InP Multi. n- InGaAsP layer n- InGaAs abs. layer n+ InP Buffer n+ InP Sub. AR coating n-metal WOCC-2005
Planar SACM/SACGM APD • InGaAs/InP Two-step MOCVD • Planar Structure • Etch and Regrowth Charge and Multiplication Region • Diffusion controlled Multiplication Layer (single Diffusion or Well Etching- Diffusion) • Xd ~ 0.2-0.4 µm • GB product = 122 GHz • Noise Ratio k~0.45 • No Implant tcharge n-Metal AR SiO 2 p+ InP Xj n- InP Multiplication n InP Charge Grading Layer n InGaAs n- InGaAs Absorption n- InP Buffer n+ InP Substrate Xd tmesa tInGaAs tBuffer WOCC-2005
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