High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

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Waveguide APD • Multimode Waveguide Structure • Mesa Etch and SiNx Passivation • InAlAs/InAlGaAs MWQ Multiplication Layer ~0.25 µm 20 µm 6 µm p-Metal • InGaAs Abs. Layer ~ 0.3 µm • Top and Bottom InAlGaAs Cladding Layer ~ 0.8 µm • Bandwidth= 20 GHz n-Metal p+ InAlGaAs InAlGaAs InAlAs/InAlGaAs MQW SiNx • GB Product= 160 GHz n+ InAlGaAs • Large Dark Current • 1 µA @ 90% V B InP Substrate • Edge Coupled w/ Lensed Fiber (3 µm Spot Size) WOCC-2005
Real-World APD Device Specifications • Quantum Efficiency, Responsivity • Gain characteristics • Bandwidth @ M=10,12 when P IN is low (Sensitivity) • Bandwidth @ M< 4 when P IN is high (Overload) • Primary Dark Current • Excess Noise Factor • Capacitance • Breakdown Voltage WOCC-2005
Page 1 and 2: High Performance, Low Cost PIN, APD
Page 3 and 4: Photodetectors and Optical Receiver
Page 5 and 6: Photoreceiver Sensitivities v.s. Bi
Page 7 and 8: Industry Standard Top-illuminated P
Page 9 and 10: Waveguide Photodetectors (WGPDs)
Page 11 and 12: Multiplication Process Enhance Perf
Page 13 and 14: How does APD Enhance Rx Sensitivity
Page 15 and 16: Planar SACM/SACGM APD • InGaAs/In
Page 17 and 18: Wafer-Fused SHIP APD • Silicon He
Page 19: Planar InGaAlAs/InAlAs MQW APD •
Page 23 and 24: APD Design- Balance between Trade-o
Page 25 and 26: Failure Rates vs. Activation Energy
Page 27 and 28: APD & PIN MSA Receivers • Key Adv
Page 29 and 30: 0.5 8 6 0.4 8 6 0.3 8 6 0.2 8 6 0.1
Page 31 and 32: Next Generation MSA Receiver & ROSA
Page 33 and 34: Path Penalty after 100 km Fiber Rec
Page 35 and 36: Advancement in Access Speed (bit/s)
Page 37 and 38: FTTP Market Market: North America:

High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

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