High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

More documents

Recommendations

Info

Resonant-Cavity InGaAs/InAlAS SACM APD • Resonant-Cavity Structure • High QE ~ 75% • Mesa Isolated • SACM Configuration • Thin InAlAs Multiplication Region (200 nm) • Lower Noise k ~ 0.18 • Bandwidth>20 GHz • High Gain-Bandwidth Product Probe Metal hυ Dielectric DBR Metal Ring Contact InGaAs Cap Ring Contact p+ InAlAs 50 nm InAlAs Spacer 60 nm InGaAs Abs. Layer 50 nm InAlAs Spacer Polyimide APD Active Region n+ InAlAs/InGaAs DBR n+ InP Buffer Layer Semi-Insulating InP Substrate WOCC-2005 150 nm p-InAlAs Charge 200 nm InAlAs Multiplication n+ InAlAs
Wafer-Fused SHIP APD • Silicon Heterointerface Photodetector (SHIP) • Wafer-Fused Si Multiplication Region Au/Zn Contact PMGI • Mesa Isolated (20-30 µm) • Backside Illumination • Bandwidth= 13 GHz • GainxBandwidth= 315 GHz • Reliability Issue n-type Si Substrate p-type Implant p+ InGaAs n- InGaAs Bonding Interface WOCC-2005
Page 1 and 2: High Performance, Low Cost PIN, APD
Page 3 and 4: Photodetectors and Optical Receiver
Page 5 and 6: Photoreceiver Sensitivities v.s. Bi
Page 7 and 8: Industry Standard Top-illuminated P
Page 9 and 10: Waveguide Photodetectors (WGPDs)
Page 11 and 12: Multiplication Process Enhance Perf
Page 13 and 14: How does APD Enhance Rx Sensitivity
Page 15: Planar SACM/SACGM APD • InGaAs/In
Page 19 and 20: Planar InGaAlAs/InAlAs MQW APD •
Page 21 and 22: Real-World APD Device Specification
Page 23 and 24: APD Design- Balance between Trade-o
Page 25 and 26: Failure Rates vs. Activation Energy
Page 27 and 28: APD & PIN MSA Receivers • Key Adv
Page 29 and 30: 0.5 8 6 0.4 8 6 0.3 8 6 0.2 8 6 0.1
Page 31 and 32: Next Generation MSA Receiver & ROSA
Page 33 and 34: Path Penalty after 100 km Fiber Rec
Page 35 and 36: Advancement in Access Speed (bit/s)
Page 37 and 38: FTTP Market Market: North America:

High Performance, Low Cost PIN, APD Receivers in Fiber Optical ...

Create successful ePaper yourself

Delete template?

Save as template?