Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 384KB ... - Keil

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Electrical characteristics STM32L151xD STM32L152xD 6.3.10 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: ● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V DD and V SS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 45. They are based on the EMS levels and classes defined in application note AN1709. Table 45. EMS characteristics Symbol Parameter Conditions Level/ Class V FESD Voltage limits to be applied on any I/O pin to induce a functional disturbance V DD = 3.3 V, LQFP100, T A = +25 °C, f HCLK = 32 MHz conforms to IEC 61000-4-2 2B V EFTB Fast transient voltage burst limits to be applied through 100 pF on V DD and V SS pins to induce a functional disturbance V DD = 3.3 V, LQFP100, T A = +25 °C, f HCLK = 32 MHz conforms to IEC 61000-4-4 4A Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations The software flowchart must include the management of runaway conditions such as: ● Corrupted program counter ● Unexpected reset ● Critical data corruption (control registers...) 94/140 Doc ID 022027 Rev 6
STM32L151xD STM32L152xD Electrical characteristics Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. Table 46. EMI characteristics Max vs. frequency range Symbol Parameter Conditions Monitored frequency band 4 MHz voltage range 3 16 MHz voltage range 2 32 MHz voltage range 1 Unit S EMI Peak level V DD = 3.3 V, T A = 25 °C, LQFP100 package compliant with IEC 61967-2 0.1 to 30 MHz 3 -6 -5 30 to 130 MHz 18 4 -7 dBµV 130 MHz to 1GHz 15 5 -7 SAE EMI Level 2.5 2 1 - 6.3.11 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 47. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value (1) Unit V ESD(HBM) Electrostatic discharge voltage (human body model) T A = +25 °C, conforming to JESD22-A114 Electrostatic discharge T V A = +25 °C, conforming ESD(CDM) voltage (charge device model) to JESD22-C101 1. Based on characterization results, not tested in production. 2 2000 II 500 V Doc ID 022027 Rev 6 95/140
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Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 384KB ... - Keil

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