IRF5305S/L - International Rectifier

l Advanced Process Technology 

l Surface Mount (IRF5305S) 

l Low-profile through-hole (IRF5305L) 

l 175°C Operating Temperature 

l Fast Switching 

l P-Channel 

l Fully Avalanche Rated 

Description 

Fifth Generation HEXFETs from International Rectifier 

utilize advanced processing techniques to achieve 

extremely low on-resistance per silicon area. This 

benefit, combined with the fast switching speed and 

ruggedized device design that HEXFET Power MOSFETs 

are well known for, provides the designer with an extremely 

efficient and reliable device for use in a wide variety of 

applications. 

The D 2 Pak is a surface mount power package capable of 

accommodating die sizes up to HEX-4. It provides the 

highest power capability and the lowest possible onresistance 

in any existing surface mount package. The 

D 2 Pak is suitable for high current applications because of 

its low internal connection resistance and can dissipate 

up to 2.0W in a typical surface mount application. 

The through-hole version (IRF5305L) is available for lowprofile 

applications. 

G 

PD - 91386C 

IRF5305S/L 

HEXFET ® Power MOSFET 

D 

S 

2 D Pak TO-262 

V DSS = -55V 

R DS(on) = 0.06Ω 

I D = -31A 

Absolute Maximum Ratings 

Parameter Max. Units 

I D @ T C = 25°C Continuous Drain Current, V GS @ -10V… -31 

I D @ T C = 100°C Continuous Drain Current, V GS @ -10V… -22 A 

I DM Pulsed Drain Current … -110 

P D @T A = 25°C Power Dissipation 3.8 W 

P D @T C = 25°C Power Dissipation 110 W 

Linear Derating Factor 0.71 W/°C 

V GS Gate-to-Source Voltage ± 20 V 

E AS Single Pulse Avalanche Energy‚… 280 mJ 

I AR Avalanche Current -16 A 

E AR Repetitive Avalanche Energy 11 mJ 

dv/dt Peak Diode Recovery dv/dt ƒ… -5.8 V/ns 

T J Operating Junction and -55 to + 175 

T STG 

Storage Temperature Range 

°C 

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 

Thermal Resistance 

Parameter Typ. Max. Units 

R θJC Junction-to-Case ––– 1.4 

R θJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 

°C/W 

4/1/99


Electrical Characteristics @ T J = 25°C (unless otherwise specified) 

Parameter Min. Typ. Max. Units Conditions 

V (BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V V GS = 0V, I D = -250µA 

∆V (BR)DSS/∆T J Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, I D = -1mA… 

R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω V GS = -10V, I D = -16A „ 

V GS(th) Gate Threshold Voltage -2.0 ––– -4.0 V V DS = V GS , I D = -250µA 

g fs Forward Transconductance 8.0 ––– ––– S V DS = -25V, I D = -16A… 

I DSS Drain-to-Source Leakage Current 

––– ––– -25 V 

µA DS = -55V, V GS = 0V 

––– ––– -250 V DS = -44V, V GS = 0V, T J = 150°C 

I GSS 

Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V 

nA 

Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V 

Q g Total Gate Charge ––– ––– 63 I D = -16A 

Q gs Gate-to-Source Charge ––– ––– 13 nC V DS = -44V 

Q gd Gate-to-Drain ("Miller") Charge ––– ––– 29 V GS = -10V, See Fig. 6 and 13 „… 

t d(on) Turn-On Delay Time ––– 14 ––– V DD = -28V 

t r Rise Time ––– 66 ––– I D = -16A 

ns 

t d(off) Turn-Off Delay Time ––– 39 ––– R G = 6.8Ω 

t f Fall Time ––– 63 ––– R D = 1.6Ω, See Fig. 10 „… 

L S Internal Source Inductance 

––– 7.5 ––– nH 

Between lead, 

and center of die contact 

C iss Input Capacitance ––– 1200 ––– V GS = 0V 

C oss Output Capacitance ––– 520 ––– pF V DS = -25V 

C rss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5… 

Source-Drain Ratings and Characteristics 

Parameter Min. Typ. Max. Units Conditions 

D 

I S Continuous Source Current MOSFET symbol 

––– ––– -31 

(Body Diode) 

showing the 

A 

I SM Pulsed Source Current integral reverse 

G 

––– ––– -110 

(Body Diode) 

p-n junction diode. 

S 

V SD Diode Forward Voltage ––– ––– -1.3 V T J = 25°C, I S = -16A, V GS = 0V „ 

t rr Reverse Recovery Time ––– 71 110 ns T J = 25°C, I F = -16A 

Q rr Reverse Recovery Charge ––– 170 250 nC di/dt = -100A/µs „… 

t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) 

Notes: 

Repetitive rating; pulse width limited by 

max. junction temperature. ( See fig. 11 ) 

„ Pulse width ≤ 300µs; duty cycle ≤ 2%. 

‚ V DD = -25V, Starting T J = 25°C, L = 2.1mH … Uses IRF5305 data and test conditions 

R G = 25Ω, I AS = -16A. (See Figure 12) 

ƒ I SD ≤ -16A, di/dt ≤ -280A/µs, V DD ≤ V (BR)DSS , 

T J ≤ 175°C 

** When mounted on 1" square PCB (FR-4 or G-10 Material ). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

2 www.irf.com


-I 

D 

, Drain-to-Source Current (A) 

1000 

100 

10 

VGS 

TOP - 15V 

- 10V 

- 8.0V 

- 7.0V 

- 6.0V 

- 5.5V 

- 5.0V 

BOTTOM - 4.5V 

-4.5V 

-I D , Drain-to-Source Current (A) 

1000 

100 

10 

VGS 

TOP - 15V 

- 10V 

- 8.0V 

- 7.0V 

- 6.0V 

- 5.5V 

- 5.0V 

BOTTOM - 4.5V 

-4.5V 

20µs PULSE WIDTH 

20µs PULSE WIDTH 

T J c= 25°C T 

1 

A 

1 

C J = 175°C 

A 

0.1 1 10 100 

0.1 1 10 100 

-V 

DS 

, Drain-to-Source Voltage (V) 

-V DS , Drain-to-Source Voltage (V) 

Fig 1. Typical Output Characteristics 

Fig 2. Typical Output Characteristics 

-I D , Drain-to-Source Current (A) 

100 

10 

T = 25°C 

J 

T = 175°C 

J 

V DS= -25V 

20µs PULSE W IDTH 

1 

A 

4 5 6 7 8 9 10 

-V GS , Gate-to-Source Voltage (V) 

Fig 3. Typical Transfer Characteristics 

R DS(on) , D rain-to-Source O n R esistance 

(Normalized) 

2.0 

1.5 

1.0 

0.5 

I D = -27A 

V GS= -10V 

0.0 

A 

-60 -40 -20 0 20 40 60 80 100 120 140 160 180 

T J , Junction Temperature (°C) 

Fig 4. Normalized On-Resistance 

Vs. Temperature 

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C, Capacitance (pF) 

2500 

2000 

1500 

1000 

500 

V GS = 0V, f = 1MHz 

C iss = C gs + C gd , C ds SHORTED 

C rss = C gd 

C oss = C ds + C gd 

C iss 

C oss 

C rss 


-V , Gate-to-Source Voltage (V) 

GS 

20 

16 

12 

8 

4 

I D = -16A 

V DS = -44V 

V DS = -28V 

0 

A 

1 10 100 

Fig 5. Typical Capacitance Vs. 

Drain-to-Source Voltage 

FOR TEST CIRCUIT 

0 

SEE FIGURE 13 

A 

0 10 20 30 40 50 60 

Q G , Total Gate Charge (nC) 

Fig 6. Typical Gate Charge Vs. 

Gate-to-Source Voltage 

-I SD , Reverse Drain Current (A) 

1000 

100 

T = 175°C 

J 

T = 25°C 

J 

V GS = 0V 

10 

A 

0.4 0.8 1.2 1.6 2.0 

-V SD , Source-to-Drain Voltage (V) 

Fig 7. Typical Source-Drain Diode 

Forward Voltage 

-I 

D 

, Drain Current (A) 

1000 

100 

10 

OPERATION IN THIS AREA LIMITED 

BY R DS(on) 

100µs 

1ms 

T 10ms 

C = 25°C 

T J = 175°C 

Single P u lse 

1 

A 

1 10 100 


Fig 8. Maximum Safe Operating Area 

4 www.irf.com


V DS 

R D 

35 

30 

R G 

V GS 

D.U.T. 

- 

V DD 

-I D , Drain Current (A) 

25 

20 

15 

10 

5 

+ 

-10V 

Pulse Width ≤ 1 µs 

Duty Factor ≤ 0.1 % 

Fig 10a. Switching Time Test Circuit 

t d(on) t r t d(off) t f 

V GS 

10% 

0 

25 50 75 100 125 150 175 

T C, Case Temperature ( ° C) 

90% 

V DS 

Fig 9. Maximum Drain Current Vs. 

Case Temperature 

Fig 10b. Switching Time Waveforms 

10 

Thermal Response (Z thJC ) 

1 

0.1 

D = 0.50 

0.20 

0.10 

0.05 

0.02 

0.01 

SINGLE PULSE 

(THERMAL RESPONSE) 

Notes: 

1. Duty factor D = t 1 / t 2 

2. Peak T J = P DM x Z thJC + TC 

0.01 

0.00001 0.0001 0.001 0.01 0.1 

t 1, Rectangular Pulse Duration (sec) 

PDM 

t1 

t2 

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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V L 

DS 

R G 

D.U.T 

IAS 

-20V 

tp 0.01Ω 

I AS 

V DD 

A 

DRIVER 

15V 

Fig 12a. Unclamped Inductive Test Circuit 

E AS , Single Pulse Avalanche Energy (mJ) 

700 

600 

500 

400 

300 

200 

100 

ID 

TOP -6.6A 

-11A 

BOTTOM -16A 

V DD = -25V 

0 

A 

25 50 75 100 125 150 175 

Starting T J , Junction Temperature (°C) 

Fig 12c. Maximum Avalanche Energy 

Vs. Drain Current 

tp 

V (BR)DSS 

Fig 12b. Unclamped Inductive Waveforms 

Current Regulator 

Same Type as D.U.T. 

-10V 

Q G 

12V 

.2µF 

50KΩ 

.3µF 

Q GS 

Q GD 

D.U.T. 

V + DS 

- 

V G 

V GS 

-3mA 

Charge 

I G I D 

Current Sampling Resistors 

Fig 13a. Basic Gate Charge Waveform 

Fig 13b. Gate Charge Test Circuit 

6 www.irf.com

Peak Diode Recovery dv/dt Test Circuit 


D.U.T* 

+ 

ƒ 

- 

Circuit Layout Considerations 

• Low Stray Inductance 

• Ground Plane 

• Low Leakage Inductance 

Current Transformer 

+ 

‚ 

- 

- 

„ 

+ 

R G 

• dv/dt controlled by R G 

• I SD controlled by Duty Factor "D" 

• D.U.T. - Device Under Test 

+ 

- 

V DD 

V GS 

[ ] 

* Reverse Polarity of D.U.T for P-Channel 

Driver Gate Drive 

Period 

P.W. 

D = 

P.W. 

Period 

[ V GS =10V ] *** 

D.U.T. I SD Waveform 

Reverse 

Recovery 

Current 

Body Diode Forward 

Current 

di/dt 

D.U.T. V DS Waveform 

Diode Recovery 

dv/dt 

V DD 

Re-Applied 

Voltage 

Inductor Curent 

Body Diode 

Forward Drop 

Ripple ≤ 5% 

[ ] 

I SD 

*** V GS = 5.0V for Logic Level and 3V Drive Devices 

Fig 14. For P-Channel HEXFETS 

www.irf.com 7


D 2 Pak Package Outline 

1.40 (.055) 

M AX. 

10.54 (.415) 

10.29 (.405) 

- A - 

2 

4.69 (.185) 

4.20 (.165) 

- B - 

1.32 (.052) 

1.22 (.048) 

10.16 (.400) 

REF. 

6.47 (.255) 

6.18 (.243) 

1.78 (.070) 

1.27 (.050) 

1 3 

15.49 (.610) 

14.73 (.580) 

2.79 (.110) 

2.29 (.090) 

5.28 (.208) 

4.78 (.188) 

2.61 (.103) 

2.32 (.091) 

3X 

1.40 (.055) 

1.14 (.045) 

5.08 (.200) 

3X 

0.93 (.037) 

0.69 (.027) 

0.55 (.022) 

0.46 (.018) 

1.39 (.055) 

1.14 (.045) 

8.89 (.350) 

REF. 

0.25 (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT 

11.43 (.450) 

NOTES: 

1 DIMENSIONS AFTER SOLDER DIP. 

2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 

3 CONTROLLING DIMENSION : INCH. 

4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. 

LEAD ASSIGNMENTS 

1 - GATE 

2 - DRAIN 

3 - SOURCE 

8.89 (.350) 

3.81 (.150) 

17.78 (.700) 

2.08 (.082) 

2X 

2.54 (.100) 

2X 

Part Marking Information 

D 2 Pak 

INTERNATIONAL 

RECTIFIER 

LOGO 

ASSEMBLY 

LOT CODE 

F530S 

9246 

9B 1M 

PART NUMBER 

DATE CODE 

(YYW W ) 

YY = YEAR 

WW = WEEK 

A 

8 www.irf.com


Package Outline 

TO-262 Outline 

Part Marking Information 

TO-262 

www.irf.com 9


Tape & Reel Information 

D 2 Pak 

TRR 

1.60 (.063) 

1.50 (.059) 

4.10 (.161) 

3.90 (.153) 

1.60 (.063) 

1.50 (.059) 

0.368 (.0145) 

0.342 (.0135) 

FEED DIRECTION 

1.85 (.073) 

1.65 (.065) 

11.60 (.457) 

11.40 (.449) 

15.42 (.609) 

15.22 (.601) 

24.30 (.957) 

23.90 (.941) 

TRL 

10.90 (.429) 

10.70 (.421) 

16.10 (.634) 

15.90 (.626) 

1.75 (.069) 

1.25 (.049) 

4.72 (.136) 

4.52 (.178) 

FEED DIRECTION 

13.50 (.532) 

12.80 (.504) 

27.40 (1.079) 

23.90 (.941) 

4 

330.00 

(14.173) 

MAX. 

60.00 (2.362) 

MIN. 

NOTES : 

1. COMFORMS TO EIA-418. 

2. CONTROLLING DIMENSION: MILLIMETER. 

3. DIMENSION MEASURED @ HUB. 

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

26.40 (1.039) 

24.40 (.961) 

3 

30.40 (1.197) 

MAX. 

4 

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 

http://www.irf.com/ Data and specifications subject to change without notice. 4/99 

10 www.irf.com

Note: For the most current drawings please refer to the IR website at: 

http://www.irf.com/package/

IRF5305S/L - International Rectifier

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