IRF8313PBF Datasheet - International Rectifier

Applications
l Load Switch
l DC/DC Conversion
Benefits
l Low Gate Charge and Low R DS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V V GS Max. Gate Rating
l 100% Tested for R G
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
Description
IRF8313PbF
HEXFET ® Power MOSFET
SO-8
PD - 97145
V DSS R DS(on) max Qg
30V 15.5m:@V GS = 10V 6.0nC
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
S2 1
G2 2
S1
3
G1 4
8
7
6
5
D2
D2
D1
D1
Absolute Maximum Ratings
Parameter
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter Typ. Max. Units
R θJL
Junction-to-Drain Lead g ––– 42
°C/W
R θJA
Junction-to-Ambient fg ––– 62.5
Notes through … are on page 9
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com 1
11/5/08

IRF8313PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, I D = 250μA
ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, I D = 1mA
R DS(on) Static Drain-to-Source On-Resistance ––– 12.5 15.5 V GS = 10V, I D = 9.7A e
mΩ
––– 18.6 21.6 V GS = 4.5V, I D = 8.0A e
V GS(th) Gate Threshold Voltage 1.35 1.80 2.35 V V DS = V GS , I D = 25μA
ΔV GS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I DSS Drain-to-Source Leakage Current ––– ––– 1.0 V
μA DS = 24V, V GS = 0V
––– ––– 150 V DS = 24V, V GS = 0V, T J = 125°C
I GSS Gate-to-Source Forward Leakage ––– ––– 100 V
nA GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V
gfs Forward Transconductance 23 ––– ––– S V DS = 15V, I D = 8.0A
Q g Total Gate Charge ––– 6.0 9.0
Q gs1 Pre-Vth Gate-to-Source Charge ––– 1.5 ––– V DS = 15V
Q gs2 Post-Vth Gate-to-Source Charge ––– 0.9 ––– V
nC GS = 4.5V
Q gd Gate-to-Drain Charge ––– 2.2 ––– I D = 8.0A
Q godr Gate Charge Overdrive ––– 1.4 ––– See Figs. 17a & 17b
Q sw Switch Charge (Q gs2 + Q gd ) ––– 2.9 –––
Q oss Output Charge ––– 3.8 ––– nC V DS = 16V, V GS = 0V
R g Gate Resistance ––– 2.2 3.6 Ω
t d(on) Turn-On Delay Time ––– 8.3 ––– V DD = 15V, V GS = 4.5V
t r Rise Time ––– 9.9 ––– I
ns D = 8.0A
t d(off) Turn-Off Delay Time ––– 8.5 ––– R G = 1.8Ω
t f Fall Time ––– 4.2 ––– See Fig. 15a & 15b
C iss Input Capacitance ––– 760 ––– V GS = 0V
C oss Output Capacitance ––– 172 ––– pF V DS = 15V
C rss Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
Single Pulse Avalanche Energy d –––
46
mJ
I AR
Avalanche Current c –––
8.0
A
Diode Characteristics
Parameter Min. Typ. Max. Units
Conditions
Conditions
D
I S Continuous Source Current ––– –––
MOSFET symbol
3.1 A
(Body Diode)
showing the
G
I SM Pulsed Source Current ––– –––
integral reverse
82 A
S
(Body Diode)c
p-n junction diode.
V SD Diode Forward Voltage ––– ––– 1.0 V T J = 25°C, I S = 8.0A, V GS = 0V e
t rr Reverse Recovery Time ––– 20 30 ns T J = 25°C, I F = 8.0A, V DD = 15V
Q rr Reverse Recovery Charge ––– 10 15 nC di/dt = 100A/μs e
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com

I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
(Normalized)
IRF8313PbF
100
10
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
100
10
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
1
0.1
≤60μs PULSE WIDTH
Tj = 25°C
2.3V
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1
2.3V
≤60μs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I D = 9.8A
V GS = 10V
10
T J = 175°C
1.5
1
T J = 25°C
1.0
0.1
0.01
V DS = 15V
≤60μs PULSE WIDTH
1 2 3 4 5 6
V GS , Gate-to-Source Voltage (V)
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
www.irf.com 3

C, Capacitance (pF)
I SD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
V GS , Gate-to-Source Voltage (V)
IRF8313PbF
10000
V GS = 0V, f = 1 MHZ
C iss
= C gs
+ C gd
, C ds
SHORTED
C rss
= C gd
C oss
= C ds
+ C gd
16
12
I D = 8.0A
V DS = 24V
V DS = 15V
1000
Ciss
Coss
8
100
Crss
4
10
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
0
0 2 4 6 8 10 12 14
Q g , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 175°C
100
10
100μsec
T J = 25°C
1
V GS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V SD , Source-to-Drain Voltage (V)
10
1
0.1
T A = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
0 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4 www.irf.com

I D , Drain Current (A)
V GS(th) , Gate Threshold Voltage (V)
IRF8313PbF
10
2.5
8
2.0
I D = 250μA
6
I D = 25μA
1.5
4
2
1.0
0
25 50 75 100 125 150 175
T A , Ambient Temperature (°C)
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
1
0.1
0.01
0.20
0.10
0.05
0.02
0.01
τJ
τJ
τ1
τ1
R1
R1
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
τ2
τ2
R2
R2
R3
R3
t 1 , Rectangular Pulse Duration (sec)
τ3
τ3
R4
R4
τ4
τ4
R5
R5
τ5
τ5
R6
R6
τ6
τ6
R7
R7
τ7
τ7
R8
R8
τ8
τ8
τa
Ri (°C/W) τι (sec)
0.1396039 0.000010
0.4048955 0.000030
0.5273926 0.000020
1.2084906 0.001289
1.5779475 0.000340
7.0394610 0.009747
18.0102679 27.798341
33.5929564 0.575346
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5

R DS (on), Drain-to -Source On Resistance (mΩ)
E AS, Single Pulse Avalanche Energy (mJ)
IRF8313PbF
38
34
30
I D = 9.8A
200
160
I D
TOP 3.0A
5.0A
BOTTOM 8.0A
26
120
22
18
14
T J = 125°C
T J = 25°C
80
40
10
2.0 4.0 6.0 8.0 10.0
V GS , Gate-to-Source Voltage (V)
0
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
tp
V (BR)DSS
V DS
+
L
DRIVER
R G
20V V GS
Fig 14a. Unclamped Inductive Test Circuit
R G
tp
D.U.T
I AS
0.01Ω
Fig 14b. Unclamped Inductive Waveforms
V DS
R D
V DS
90%
V GS
D.U.T.
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
- V DD
A
I AS
10%
V GS
t d(on) t r t d(off) t f
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6 www.irf.com

IRF8313PbF
+
‚
-
D.U.T
+
ƒ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
„
+
Reverse
Recovery
Current
Driver Gate Drive
Period
P.W.
D.U.T. I SD Waveform
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
D =
P.W.
Period
V GS =10V
V DD
*
R G
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V DD
+
-
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
I SD
* V GS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET ® Power MOSFETs
Id
Vds
Vgs
0
20K 1K
S
DUT
L
VCC
Vgs(th)
Qgodr
Qgd
Qgs2
Qgs1
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
www.irf.com 7

IRF8313PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
A
E
6
6X
D
5
8 7 6 5
1 2 3 4
e
B
H
0.25 [.010] A
DIM
INCHES MILLIME T E RS
MIN MAX MIN MAX
A
A1
.0532
.0040
.0688
.0098
1.35
0.10
1.75
0.25
b .013 .020 0.33 0.51
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
.189 .1968
.1497 .1574
.050 BAS IC 1.27 BAS IC
.025 BAS IC 0.635 BASIC
.2284 .2440
.0099 .0196
.016 .050
0° 8°
4.80 5.00
3.80 4.00
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
e1
A
C
y
K x 45°
8X b
A1
0.25 [.010] C A B
0.10 [.004]
8X L
7
8X c
F OOT PRINT
NOTES :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
6.46 [.255]
8X 0.72 [.028]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
3X 1.27 [.050]
XXXX
F7101
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
8X 1.78 [.070]
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8 www.irf.com

IRF8313PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 )
12.40 ( .488 )
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T J = 25°C, L = 1.43mH, R G = 25Ω, I AS = 8.0A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… R θ is measured at T J of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 9

IRF8313PbF
Orderable Part number Package Type
Standard Pack
Form
Quantity
IRF8313PbF SO-8 Tube/Bulk 95
IRF8313TRPbF SO-8 Tape and Reel 4000
Note
Qualification Information † SO-8 MSL1
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
Consumer ††
(per JEDEC JESD47F ††† guidelines)
(per JEDEC J-STD-020D ††† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http//www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/08
10 www.irf.com