Heterostructure Band Engineering of Type-II InAs/GaSb Superlattice ...
Heterostructure Band Engineering of Type-II InAs/GaSb Superlattice ...
Heterostructure Band Engineering of Type-II InAs/GaSb Superlattice ...
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and lineup. Nature <strong>of</strong> unipolar current blocking layer was investigated and dark current reduction mechanisms were<br />
discussed. The peak D* for the PbIbN design is 2×10 10 (cm-√Hz)/W at -0.5 V. The measured value <strong>of</strong> responsivity at this<br />
bias is 3.4 A/W and QE <strong>of</strong> 35% for 10 µm wavelength.<br />
Work supported by AFRL, AFOSR and MDA.<br />
REFERENCES<br />
[1] E. Plis, S. J. Lee, Z. Zhu, A. Amtout and S. Krishna, "<strong>InAs</strong>/<strong>GaSb</strong> <strong>Superlattice</strong> Detectors Operating at Room<br />
Temperature," IEEE Journal <strong>of</strong> Selected Topics in Quantum Electronics, 12(6), (2006).<br />
[2] Bergman J, Sullivan GJ, Ikhlassi A, ”Molecular beam epitaxy growth <strong>of</strong> high quantum efficiency <strong>InAs</strong>/<strong>GaSb</strong><br />
superlattice detectors,” Journal <strong>of</strong> Vacuum Science and Technology B 23,1144–1148 (2005).<br />
[3] Hood A, Razeghi M, Aifer EH, and Brown GJ , “On the performance and surface passivation <strong>of</strong> type <strong>II</strong> <strong>InAs</strong>/<strong>GaSb</strong><br />
superlattice photodiodes for the very long-wavelength infrared,” Applied Physics Letters 87, 151113–151115 (2005).<br />
[4] C.H. Grein, M.E. Flatte, T.C. Hasenberg, J.T. Olesberg, S.A. Anson, L. Zhang, and T.F. Boggess, “Auger<br />
recombination in narrow-gap semiconductor superlattices incorporating antimony,” J. Appl. Phys.92, 7311 (2002).<br />
[5] J. B. Rodriguez, E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishna, “nBn structure based on<br />
<strong>InAs</strong>/<strong>GaSb</strong> type-<strong>II</strong> strained layer superlattices,” Appl. Phys. Lett. 91, 043514 (2007).<br />
[6] David Z.-Y. Ting, Cory J. Hill, Alexander Soibel, Sam A. Keo, Jason M. Mumolo, Jean Nguyen, and Sarath D.<br />
Gunapala, “A high-performance long wavelength superlattice complementary barrier infrared detector,” Appl. Phys.<br />
Lett. 95, 023508 (2009).<br />
[7] Binh-Minh Nguyen, Darin H<strong>of</strong>fman, Pierre-Yves Delaunay, and Manijeh Razeghi, “Dark current suppression in type<br />
<strong>II</strong> <strong>InAs</strong>/<strong>GaSb</strong> superlattice long wavelength infrared photodiodes with M-structure barrier,” Appl. Phys. Lett. 91, 163511<br />
(2007).<br />
[8] E. Plis, J-B Rodriguez, G. Bishop, H. Kim, A. Khoshakhlagh, Y. Sharma, R. L. Dawson,and S.Krishna,“Reduction <strong>of</strong><br />
leakage currents in nBn-based long-wave infrared detectors using type-<strong>II</strong> <strong>InAs</strong>/<strong>GaSb</strong> superlattices”, Infrared Technology<br />
and Applications XXXIV Proc. SPIE 6940, (2008)<br />
[9] A. F. Milton, QSIP 2009 Conference Presentation, http://qsip.jpl.nasa.gov/qsip_presentations.html.<br />
Proc. <strong>of</strong> SPIE Vol. 7660 76601T-6<br />
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