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<str<strong>on</strong>g>Electr<strong>on</strong>ically</str<strong>on</strong>g> <str<strong>on</strong>g>c<strong>on</strong>trolled</str<strong>on</strong>g> <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g><br />

<str<strong>on</strong>g>based</str<strong>on</strong>g> <strong>on</strong> <strong>translinear</strong> circuits<br />

Wiwat Kiran<strong>on</strong>, Chariya Loescharataramdee, Naruemol Kiatwarin and Pramote Wardkein<br />

Faculty of Engineering and Research Center for Communicati<strong>on</strong>s and Informati<strong>on</strong> Technology (ReCCIT)<br />

King M<strong>on</strong>gkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand<br />

Ph<strong>on</strong>e: (662)3269968 Ext. 109, Fax: (662)7392398, Email: klchariy@kmitl.ac.th<br />

Abstract<br />

This paper presents a novel design of <str<strong>on</strong>g>negative</str<strong>on</strong>g><br />

<str<strong>on</strong>g>resistance</str<strong>on</strong>g> <str<strong>on</strong>g>based</str<strong>on</strong>g> <strong>on</strong> <strong>translinear</strong> circuits. The <str<strong>on</strong>g>resistance</str<strong>on</strong>g> is<br />

electr<strong>on</strong>ically tunable. Hence applicati<strong>on</strong>s of the proposed<br />

<str<strong>on</strong>g>negative</str<strong>on</strong>g> resistor are practically c<strong>on</strong>venient. In additi<strong>on</strong>, the<br />

circuit offers an advantageous feature of compensati<strong>on</strong> for<br />

temperature sensitivity. Simulati<strong>on</strong> results are obtained to<br />

show validity of the theoretical analysis.<br />

V A<br />

I O<br />

I C2<br />

I A<br />

Q 1<br />

Q 2<br />

A<br />

B<br />

Q 3 Q 4<br />

I B<br />

V B<br />

1. Introducti<strong>on</strong><br />

I O<br />

I C4<br />

Negative <str<strong>on</strong>g>resistance</str<strong>on</strong>g> is very useful in various<br />

applicati<strong>on</strong>s in instrumentati<strong>on</strong>, circuit designs and signal<br />

processing. One familiar applicati<strong>on</strong> is to use <str<strong>on</strong>g>negative</str<strong>on</strong>g><br />

<str<strong>on</strong>g>resistance</str<strong>on</strong>g> for impedance matching or improving the quality<br />

factor of an inductor or a res<strong>on</strong>ant circuit [1]. Negative<br />

<str<strong>on</strong>g>resistance</str<strong>on</strong>g> can be used to help set up the oscillatory<br />

c<strong>on</strong>diti<strong>on</strong>s in an oscillator circuit. The use of <str<strong>on</strong>g>negative</str<strong>on</strong>g><br />

<str<strong>on</strong>g>resistance</str<strong>on</strong>g> al<strong>on</strong>g with an integrator helps boost linearity in<br />

integrati<strong>on</strong> process [2].<br />

There are many papers presenting the designs of<br />

<str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> <str<strong>on</strong>g>based</str<strong>on</strong>g> <strong>on</strong> variety of techniques. Some<br />

designs directly generate <str<strong>on</strong>g>negative</str<strong>on</strong>g> input impedance [3-5].<br />

Others rely <strong>on</strong> <str<strong>on</strong>g>negative</str<strong>on</strong>g> impedance c<strong>on</strong>verters and <str<strong>on</strong>g>negative</str<strong>on</strong>g><br />

impedance inverters [6]. However, to the best of the authors’<br />

knowledge there has been no attempt made to design<br />

electr<strong>on</strong>ically tunable <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> with a <strong>translinear</strong><br />

implementati<strong>on</strong>. Hence it is the aim of this paper to present<br />

a new development of designing electr<strong>on</strong>ically <str<strong>on</strong>g>c<strong>on</strong>trolled</str<strong>on</strong>g><br />

<str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> <str<strong>on</strong>g>based</str<strong>on</strong>g> <strong>on</strong> <strong>translinear</strong> circuits. The design<br />

also has the capability to compensate for changes in<br />

temperature. Not <strong>on</strong>ly that the proposed circuit is suitable<br />

for IC implementati<strong>on</strong> but electr<strong>on</strong>ically tunable feature<br />

makes it appealing for practical applicati<strong>on</strong>s. Simulati<strong>on</strong><br />

results obtained c<strong>on</strong>firm the validity of the theoretical<br />

analysis of the proposed design, that is, <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g><br />

with changes in temperature compensated for has been<br />

successfully generated and applied in a res<strong>on</strong>ant circuit in<br />

order to improve its quality factor.<br />

2. Circuit descripti<strong>on</strong><br />

The floating <str<strong>on</strong>g>negative</str<strong>on</strong>g> resistor proposed in the paper<br />

relies <strong>on</strong> the basic <strong>translinear</strong> cell shown in Fig. 1. This is<br />

the same element that Fabre and Member [7] used as a<br />

voltage follower at the fr<strong>on</strong>t end of a current c<strong>on</strong>veyor.<br />

Fig. 1 Basic <strong>translinear</strong> element.<br />

Assume all the standard <strong>translinear</strong> c<strong>on</strong>diti<strong>on</strong>s with respect<br />

to temperature and area juncti<strong>on</strong>s [11], the analysis of the<br />

circuit in Fig. 1 can be described in the following. First, the<br />

base-emitter voltage of Q 2 is found from<br />

V<br />

V<br />

be2<br />

= be1<br />

+ V<br />

A<br />

−V<br />

Using the approximati<strong>on</strong> of the collector current and baseemitter<br />

voltage [8] gives the following collector current of<br />

Q 2<br />

where<br />

I<br />

C2<br />

<br />

= I<br />

=<br />

s<br />

I s e<br />

e<br />

( V<br />

V<br />

V<br />

be1 + A −<br />

T<br />

V<br />

T<br />

B<br />

B<br />

⎛ ⎛ I ⎞<br />

O<br />

VT<br />

VA<br />

VB<br />

I ⎟ ⎞<br />

⎜<br />

ln<br />

⎜<br />

⎟+<br />

−<br />

⎝ ⎝ s ⎠ ⎠<br />

V<br />

V<br />

AB<br />

= VT<br />

(1)<br />

I o e<br />

I s is the reverse saturati<strong>on</strong> of the juncti<strong>on</strong><br />

V T is the thermal voltage<br />

V<br />

AB<br />

= V<br />

A<br />

−V<br />

B<br />

)


In the same manner, the collector current of Q 4 is given by<br />

Therefore,<br />

I<br />

−V<br />

AB<br />

C4 = Ioe<br />

VT<br />

(2)<br />

I<br />

B<br />

= I<br />

Meanwhile, it is not hard to see that<br />

=<br />

I A = 0<br />

− I<br />

C2 C4<br />

⎛V<br />

Io<br />

sinh<br />

⎜<br />

⎝ V<br />

⎞<br />

⎟<br />

⎠<br />

2<br />

AB<br />

(3)<br />

T<br />

The dashed-box c<strong>on</strong>tained in Fig. 2 c<strong>on</strong>sists of a<br />

compound <strong>translinear</strong> cell resulted from c<strong>on</strong>necting two<br />

identical elements of Fig. 1. The current I generated in the<br />

cell is<br />

I<br />

=<br />

⎛V<br />

sinh<br />

⎜<br />

⎝ 2V<br />

⎞<br />

⎟<br />

⎠<br />

2 Io<br />

AB<br />

(4)<br />

T<br />

This current is mirrored to node A and B with<br />

I<br />

AB<br />

= −<br />

⎛V<br />

sinh<br />

⎜<br />

⎝ 2V<br />

⎞<br />

⎟<br />

⎠<br />

2 Io<br />

AB<br />

(5)<br />

T<br />

Expanding the hyperbolic sine term in (5) with the Taylor’s<br />

series. Then with the assumpti<strong>on</strong> that V AB


Since Q 5 , Q 6 , Q 7 and Q 8 compose a current mirror circuit,<br />

I a = I<br />

The current expressed in (9) can then be written as<br />

I<br />

b<br />

=<br />

2I<br />

R<br />

ICID<br />

⎛V<br />

sinh<br />

⎜<br />

⎝V<br />

S<br />

T<br />

⎞<br />

⎟<br />

⎠<br />

(10)<br />

Simulati<strong>on</strong> results with variati<strong>on</strong> of temperature are<br />

shown in Fig. 5. Fig. 5(a) shows the simulati<strong>on</strong> results of<br />

the <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> generator without temperature<br />

compensati<strong>on</strong>. This is the part illustrated in the dashed-box<br />

of Fig. 4. While Fig. 5(b) shows the simulati<strong>on</strong> results of<br />

the complete versi<strong>on</strong> of the proposed <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g><br />

with temperature compensati<strong>on</strong>, that is, the whole Fig. 4.<br />

Again if V S


Ω, 0.1 mH, and 1 nF respectively. Varying I R so as to get<br />

various values of the <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g>. The frequency<br />

resp<strong>on</strong>se of the loop-current is shown in Fig. 7.<br />

V in<br />

R -R L<br />

Fig. 6 Bandpass filter with <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> to improve<br />

the quality factor.<br />

Fig. 7 Frequency resp<strong>on</strong>se of the loop current.<br />

It is clearly seen that the quality factor of the circuit can be<br />

improved by adjusting the bias current I b such that the total<br />

<str<strong>on</strong>g>resistance</str<strong>on</strong>g> in the circuit is decreasing.<br />

I C<br />

C<br />

the theoretical analysis. The proposed <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g><br />

has also been successfully applied to improve the quality<br />

factor of a res<strong>on</strong>ant circuit. In additi<strong>on</strong>, electr<strong>on</strong>ically<br />

<str<strong>on</strong>g>c<strong>on</strong>trolled</str<strong>on</strong>g> positive <str<strong>on</strong>g>resistance</str<strong>on</strong>g> can be easily c<strong>on</strong>structed by<br />

simple modificati<strong>on</strong> to the proposed circuit. Since the<br />

design relies exclusively <strong>on</strong> the use of transistors, it is highly<br />

suitable for IC implementati<strong>on</strong>.<br />

REFERENCES<br />

[1] M. Lapinoja and T. Rahk<strong>on</strong>en, “An Active Tuning and<br />

Impedance Matching Element,” Proc. ISCAS/IEEE,<br />

1998, pp. I-559-I-562.<br />

[2] S. Takagi and N. Fujii, “Novel highly linear MOS<br />

integrator using a <str<strong>on</strong>g>negative</str<strong>on</strong>g> impedance c<strong>on</strong>vertor<br />

(NIC),” Electr<strong>on</strong>. Lett., vol. 30, no. 10, pp. 746-748,<br />

May. 1994.<br />

[3] L. O. Chua, “Bipolar-JFET-MOSFET Negative<br />

Resistance Devices,” IEEE Trans. Circuits Syst., vol.<br />

CAS-32, no. 1, pp. 46-61, Jan 1985.<br />

[4] H. Takagi and G. Kano, “Complementary JFET<br />

Negative <str<strong>on</strong>g>resistance</str<strong>on</strong>g> devices,” IEEE J.Solid-state<br />

circuit, vol. SC-10, pp. 509-515, Dec. 1975.<br />

[5] K. Lehovec and R. Zuleeg, “Negative <str<strong>on</strong>g>resistance</str<strong>on</strong>g> of a<br />

modifided insulated-gate field-effect transistor,”<br />

Proc.IEEE, vol. 62, pp. 1163-1165, Aug. 1974.<br />

[6] C. Toumazou and F. J. Lidgey, “Current-C<strong>on</strong>veyor<br />

Basic and Applicati<strong>on</strong>s,” ISCAS’94, pp. 569-585, 1994.<br />

[7] A. Fabre, O. Saaid, F. Wiest and C. Boucher<strong>on</strong>, “High-<br />

Frequency High-Q BiCMOS current-Mode Bandpass<br />

Filter and Mobile Communicati<strong>on</strong> Applicati<strong>on</strong>,” IEEE<br />

J. Solid-State Circuits, vol. 33, pp. 614-625, Apr. 1998.<br />

[8] A. S. Sedra and K. C. Smith, Microelectr<strong>on</strong>ic Circuits.<br />

Oxford University Press, Inc., 1991.<br />

[9] D. R. Frey, “Log-domain filtering: an approach to<br />

current mode filtering,” IEE Proc. G, vol. 140, pp.<br />

406-416, Dec.1993.<br />

[10] W. Surakamp<strong>on</strong>torn, V. Riewruja, K. Kumwachara and<br />

C. F<strong>on</strong>gsamut, “Temperature compensati<strong>on</strong> of<br />

<strong>translinear</strong> current c<strong>on</strong>veyor and OTA,” Electr<strong>on</strong>. Lett.,<br />

vol. 34, no. 8, pp. 707-709, Apr. 1998.<br />

[11] A. Fabre, “New formulati<strong>on</strong>s to describe <strong>translinear</strong><br />

mixed cells accurately,” IEE Proc.-Circuits Devices<br />

Syst., vol. 141, no.3, Jun 1994.<br />

4. Discussi<strong>on</strong> remarks and C<strong>on</strong>clusi<strong>on</strong>s<br />

This paper presents a new design of floating<br />

<str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> <str<strong>on</strong>g>based</str<strong>on</strong>g> <strong>on</strong> <strong>translinear</strong> circuits. The<br />

<str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> is successfully generated with linear<br />

performance obtained for the voltage range of + 2V T .<br />

Outside this range, the <str<strong>on</strong>g>negative</str<strong>on</strong>g> <str<strong>on</strong>g>resistance</str<strong>on</strong>g> becomes<br />

n<strong>on</strong>linear. The <str<strong>on</strong>g>resistance</str<strong>on</strong>g> is also electr<strong>on</strong>ically tunable and<br />

temperature dependence compensated for. Simulati<strong>on</strong><br />

results show that the circuit operati<strong>on</strong> is in agreement with

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