Texas Instruments TPS65020 Power Management IC - Toradex

TPS65020www.ti.com SLVS607C –SEPTEMBER 2005–REVISED SEPTEMBER 2011ELECTRICAL CHARACTERISTICSVINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6 V, VBACKUP = 3 V, T A = –40°C to 85°C, typical values areat T A = 25°C (unless otherwise noted)VDCDC3 STEP-DOWN CONVERTERPARAMETER TEST CONDITIONS MIN TYP MAX UNITV I Input voltage range, VINDCDC3 2.5 6 VI O Maximum output current 800 mAI (SD) Shutdown supply current in VINDCDC3 DCDC3_EN = GND 0.1 1 μAr DS(on) P-channel MOSFET on-resistance VINDCDC3 = V (GS) = 3.6 V 310 698 mΩI lkg P-channel leakage current VINDCDC3 = 6 V 0.1 2 μAr DS(on) N-channel MOSFET on-resistance VINDCDC3 = V (GS) = 3.6 V 220 503 mΩI lkg N-channel leakage current V (DS) = 6 V 7 10 μAForward current limit (P- and N-channel) 2.5 V < VINDCDC3 < 6 V 1.05 1.2 1.35 Af S Oscillator frequency 1.3 1.5 1.7 MHzFixed output voltage VINDCDC3 = 2.5 V to 6 V;FPWMDCDC3=0 0 mA ≤ I O ≤ 600 mAAll VDCDC3Fixed output voltage VINDCDC3 = 2.5 V to 6 V;FPWMDCDC3=1 0 mA ≤ I O ≤ 600 mAAdjustable output voltage with resistor VINDCDC3 = VDCDC3 +0.4 V (min 2.5 V) todivider at DEFDCDC3 FPWMDCDC3=0 6 V; 0 mA ≤ I O ≤ 600 mAAdjustable output voltage with resistor VINDCDC3 = VDCDC3 +0.4 V (min 2.5 V) todivider at DEFDCDC3; FPWMDCDC3=1 6 V; 0 mA ≤ I O ≤ 600 mA–2% 2%–1% 1%–2% 2%–1% 1%VINDCDC3 = VDCDC3 + 0.3 V (min. 2.5 V)Line Regulation 0 %/Vto 6 V; I O = 10 mALoad Regulation I O = 10 mA to 400 mA 0.25 %/AVDCDC3 ramping from 5% to 95% of targetSoft start ramp time 750 μsvalueInternal resistance from L3 to GND 1 MΩVDCDC3 discharge resistance 300 ΩCopyright © 2005–2011, Texas Instruments Incorporated Submit Documentation Feedback 9Product Folder Link(s) : TPS65020