Multiscale modeling of PECVD generated Silicon films ... - Lammps

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Kinetic Monte Carlo(n- fold method) II At each step a complete list of possible reactions for allsurface sites is considered Reaction event j is randomly selected according to:Ri=M= ∑ i = 1ri∑i= j − 1i=jr( )i= 1 ii=1 i< ξ < 11R∑Rrwith the random number chi, the total number of possiblereactions per step M and the reaction rate r The time increment delta R is calculated asδ t = −ln( ξ )R22( )
KMC Results: Snapshot of KMC generated surface visualized in MAPS:
Page 1 and 2: LAMMPS User Group MeetingAugust 7-8
Page 3 and 4: Plasma Enhanced Vapor Deposition Ch
Page 5: Kinetic Monte Carlo(n- fold method)
Page 9 and 10: KMC Results: Void distribution
Page 11 and 12: Tersoff Potential Bond Order Potent
Page 13 and 14: LAMMPS MD Results: Convergence of t
Page 15 and 16: LAMMPS MD Results: Autocorrelation
Page 17 and 18: LAMMPS MD Results: Bond Angle Distr
Page 19 and 20: Figure 12 - Example Attack Tree for
Page 21 and 22: LAMMPS MD Performance with modified
Page 23 and 24: Monte Carlo based Tools
Page 25 and 26: Conclusions Silicon films growth by

Multiscale modeling of PECVD generated Silicon films ... - Lammps

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