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32 4 Scintillation detec<strong>to</strong>rs<br />

activa<strong>to</strong>r should lie energetically above the valence band, but should<br />

lie low enough <strong>to</strong> maintain a high probability <strong>for</strong> hole capture. Vice<br />

versa, this applies <strong>for</strong> electrons and the energy gap between the bot<strong>to</strong>m<br />

of the conduction band and the radiation level of the doping ion. In<br />

general, the energy of the excited activa<strong>to</strong>r state should be smaller than<br />

the bandgap energy Eg <strong>to</strong> prevent self-absorption of the scintillation<br />

light by the host lattice.<br />

Instead of exciting luminescence centres, the electrons, holes and exci<strong>to</strong>ns<br />

can be bo<strong>und</strong> by traps. These are metastable levels from which the<br />

charge carriers may subsequently return <strong>to</strong> the conduction band by acquiring<br />

thermal energy from the lattice vibrations or fall <strong>to</strong> the valence<br />

band by a radiationless transition.<br />

Q is the luminescence quantum yield, which is the efficiency <strong>for</strong> the luminescence<br />

emission of an activated luminescence centre and depends<br />

on the kind of excited state of a luminescence centre.<br />

Scintillation yields can be a few thousand <strong>to</strong> much more than 60.000<br />

pho<strong>to</strong>ns per deposited MeV <strong>for</strong> efficient scintilla<strong>to</strong>rs [26, 27].<br />

The amount of produced pho<strong>to</strong>ns varies and leads <strong>to</strong> an intrinsic scintilla<strong>to</strong>r<br />

resolution. The variation results from three fac<strong>to</strong>rs. There is a<br />

nonproportionality of the number of emitted pho<strong>to</strong>ns <strong>to</strong> the incident<br />

energy. The importance of this fac<strong>to</strong>r depends on the scintilla<strong>to</strong>r material<br />

and the considered energy region. Also, the electronic excitations<br />

of various energies lead <strong>to</strong> a distribution of light yields, which increase<br />

the energy resolution. Additionally, local variations of the light yield<br />

are caused by inhomogeneity of the crystal.<br />

DECAY TIME<br />

The time characteristic of the scintilla<strong>to</strong>r is determined by the half-life<br />

characteristic of the excited states. Mostly, the migration time does<br />

not influence the time characteristic, because it is much shorter than<br />

the half-life. The impurity configurations are <strong>for</strong>med essentially after<br />

10 −12 -10 −8 sec and then de-excite with the corresponding half-life of<br />

typically 50-500 ns. Inorganic scintilla<strong>to</strong>rs can have more than one decay<br />

time, originating from different excitations of luminescence centres.<br />

In general, the time evolution of the luminescence emission can be described<br />

by one or two exponential decay <strong>for</strong>ms [26, 27, 28, 29].<br />

TEMPERATURE DEPENDENCE<br />

The light output of scintilla<strong>to</strong>rs also depends on temperature. While<br />

organic scintilla<strong>to</strong>rs have a temperature independent light output, the<br />

light output of inorganic scintilla<strong>to</strong>rs can vary strongly with temperature.<br />

As shown in figure 4.5 NaI:Tl has a stable light output between 20<br />

and 40 ◦ C, increasing with higher and lower temperature. Bi4Ge3O12

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