2 The scaling of MOSFETs, Moore's law, and ITRS

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The scaling of MOSFETs, Moore’s law, and ITRS Chapter 2[2.48] Y. Taur, “CMOS design near the scaling limit” IBM J. Res. Develop, Vol.46(2/3), pp. 213-222, 2002[2.49] S. –H. Lo, D. A. Buchanan, and Y. Taur, “Modeling and characterization ofquantization, polysilicon depletion, and direct tunnelling effects in MOSFETswith ultra thin oxides”, IBM J. Res. Develop, Vol. 43(3), pp. 327-337, 1999[2.50] H. Kawaura, T. Sakamoto, and T. Baba, “Observation of source-to-drain directtunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors”, Applied Physics Letter, Vol. 76,NO. 25, pp. 3810 - 3812, 2000[2.51] J. R. Watling, A. R. Brown, and A. Asenov, “Can the Density GradientApproach Describe the Source-Drain Tunneling in Decanano Double-GateMOSFETs”, Journal of Computational Electronics, 1:289-293 2002[2:52] A. Asenov, S. Kaya, and J. H. Davies, “Intrinsic Threshold Voltage fluctuations inDecanano MOSFETs Due to Local Oxide Thickness Variations”, IEEE Tran.Electron Devices, Vol. 49 (1), pp. 112-119, 2002[2.53] A. Asenov, S. Kaya, and A. R. Brown, “Intrinsic Parameter Fluctuations inDecananometer MOSFETs Introduced by Gate Line Edge Roughness”, IEEETran. Electron Devices, Vol. 50(5), pp. 1254-1260, 2003[2:54] B. Hoeneisen and C. A. Mad, “Fundamental Limitation in Microelectronics –I.MOS Technology”, Solid-State Electronics, Vol. 15, pp. 819-829, 1972[2:55] T. Hagiwara, K. Yamaguchi, and S. Asai, “Threshold voltage variation in verysmall MOS transistors due to local dopant fluctuations,” Proc. Symp. VLSITechnol., Dig. Tech. Papers, 1982, pp. 46–47.[2.56] R.Kadaba, R. Lakshmikumar, A. Hadaway, and M. A. Copeland,“Characterization and Modeling of Mismatch in MOS Transistors for PrecisionAnalog Design”, IEEE journal Of Solid-State circuits, Vol. Sc-21,No. 6, pp.1057, 1986[2.57] T. Mizuno, J –I. Okamura, and A. Toriumi, “Experimental Study of ThresholdVoltage Fluctuation Due to Statistical Variation of Channel DopantDopant Number in MOSFET’s”, IEEE Trans, Electron Devices, Vol. 41(11), pp.2216-2221, 199444
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