Electrical and Electronics - Lingaya's University

B.Tech. Electrical & Electronics Engineering (Regular)TEXT BOOKPrasad, K.D., ―Antennas and Wave Propagation‖/Khanna Publications.REFERENCE BOOKS1. Balanis C.A., “Antenna Theory, Analysis andDesign‖, Wiley publication.2. Kraus, John D. & Mashefka, Ronald J. / ―Antennas:For All Applications‖, Tata McGraw Hill, 3rd Ed.3. Jordan Edwards C. and Balmain Keith G.,―Electromagnetic Waves and Radiating Systems‖,Prentice Hall of India.Dielectric & poly silicon film deposition;Metallization.7. VLSI FABRICATION PROCESS: Lithograph,Etching, Ion implantation, yield & reliability; Designexample using CMOS: Incriminator / decrementer,left / right shift serial / parallel register, comparatorfor two n-bit number, a two phase non-overlappingclock generator for two n-bit number; a two phasenon overlapping clock generator with buffed outputon both phases, design of an even driven ( latch)element for EDL system.EE-308MICRO ELECTRONICSL T P Cr5 0 0 3TEXT BOOKWeste, Neil H. E., ―Principles of CMOS VLSI Design‖,Addison-Wesley, 2 nd Edition, 2004.OBJECTIVEMicroelectronics is a subfield of electronics and isrelated to the study and manufacture or microfabrication of electronic components which are verysmall and is associated with integrated circuits (IC).The aim of the subject is to familiarize the students tofocus on the upcoming field of VLSI which includes notonly the fabrication process but also the designing ofcircuits by using MOSFETs.1. INTRODUCTION TO MOSFETS: Structure &Operation of MOSFETs; enhancement typeMOSFETs, (n-MOS & p-MOS); depletion typeMOSEFTs (n-MOS & p-MOS); equivalent circuit forMOSFET; CMOS.2. MOS TRANSISTOR THEORY: MOS device;design equations; MOS transistor; Evaluationaspects of MOS transistor; threshold voltage;MOS transistor transconductance & outputconductance; MOS transistor figure of merit;determination of pull up to pull down ratio for ann-MOS inverter driven by another nMOS inverterand by one or more pass transistor; alternativeforms of pull up; CMOS inverter – DCcharacteristics; static load MOS inverters;Differential inverter pass transistor; transmissiongates, tri-state inverter; Latch up in CMOScircuitry & Bi-CMOS Latch up susceptibility.3. MOS CIRCUITS & LOGIC DESIGN: Basicphysical design of simple logic gates using n-MOS;p-MOS & CMOS; CMOS logic gate designconsiderations, CMOS logic structures; clockingstrategies.4. CIRCUIT CHARACTERIZATION &PERFORMANCE ESTIMATION: Resistanceestimation; capacitance estimation; inductance;switching characteristics; CMOS gate transistorsizing; power dissipation5. SEMICONDUCTOR MEMORIES: Type of memories,shift register sequential memories MOS registerstages; two phase ratio less shift-register stage; fourphase ratio less register stage; CMOS register stage;a static shift register stage; a three phase staticregister; MOS-RAMS Organization of a RAM;paralleling of semiconductor memor; integrated circuitchips; charged couple devices (CCD).6. VLSI FABRICATION PROCESS: Crystal growth &wafer preparation; epitaxy; oxidation; diffusion;REFERENCE BOOKS1. Puckuell, Doughlas A., & EshRagh Kamran, ―BasicVLSI Design‖, Prentice Hall of India, 3 rd Edition,2008.2. Sedra / Smith, ―Microelectronics Circuits‖, OxfordUniversity Press 5 th Edition.3. S. M. Sze., ―VLSI Technology‖, Tata McGraw Hill,2 nd Edition, 2003.EE-352POWER SYSTEMENGINEERING – II LABL T P Cr0 0 2 1LIST OF EXPERIMENTS1. Symmetrical fault level measurement on a D.CNetwork analyzer.2. Unsymmetrical fault level measurement on a D.CNetwork analyzer for various types of faults.3. To find ABCD parameters of a model oftransmission line.4. To draw the operating characteristics of IDMTrelay.5. To observe the Ferranti effect in a model oftransmission line6. To draw the operating characteristics of differentialrelay.7. Testing of transformer oil.8. To study the voltage distribution in an analoguemodel of a string insulator and to compute thestring efficiency.9. Measurement of earth resistance by Earth tester.10. To study circuit breakers.11. To study Bucholtz relay.12. To study plain impedance relay and plot it‘stripping characteristics.EE-353MICRO COMPUTER ANDMICROPROCESSORS LABL T P Cr0 0 2 1LIST OF EXPERIMENTS:1. Write a program using 8085 and verify for:a. Addition of two 8-bit numbers.b. Addition of two 8-bit numbers (with carry).2. Write a program using 8085 and verify for:a. 8-bit subtraction (display borrow)b. 16-bit subtraction (display borrow)3. Write a program using 8085 for multiplication oftwo 8- bit numbers by repeated addition method.18