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予稿集 - 応用物理学会

予稿集 - 応用物理学会

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第 1 回 集 積 化 MEMS 技 術 研 究 ワークショップ 講 演 予 稿 集 LSI Sensitivity Enhancement Scheme for Image Quality Improvement on Capacitive Fingerprint Sensor LSINTT 1 NTT 2 1 1 1 1 2NTT Microsystem Integration Labs. 1 , NTT Advanced Technology Corp. 2 T. Shimamura 1 H. Morimura 1 , S. Shigematsu 1 ,M.Nakanishi 1 , K. Machida 2tshima@aecl.ntt.co.jp LSI Nf 1 Cf R R f Qr f C Nf f [1]0.5-m CMOS 2 [1] T. Shimamura, et al., proc. 24th Sensor Symposium., pp.415-418, 2007. ISFET pH LSI Design of a pH Sensor LSI Circuit Integrated with ISFETNTT 1 2 3 1 3 2 1 2 3NTT Advanced Technology Corporation 1 HORIBA, Ltd. 2 , Tokyo Institute of Technology 3T. Konishi 1 , N. Ishihara 3 , H. Tanabe 2 , K. Machida 1 , S. Nomura 2 , K. Masu 3toshifumi.konishi@ntt-at.co.jp FET(ISFET) pH Si CMOS LSI ISFET pH pH CMOS FET ISFET( 1) CMOS pH CMOS ISFET ISFET 1 MOSFET pH ISFET MOSFET nMOSFETMOSISFET pH 1 pH LSI ISFET pH CMOS ISFET 3.3V 1.3V(pH=1)2.1V(pH=14)9 2009.7.14 東 京 工 業 大 学 すずかけホール

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