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Mask aspects of EUVL imaging at 27nm node and below

Mask aspects of EUVL imaging at 27nm node and below - Brion ...

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[11] Kamo, T., Aoyama, H., Tanaka, T., Suga, O., Abe, T., Takikawa, T., Hayashi, N., Shoki, T., Usui, Y. <strong>and</strong> Hosoya, M.,<br />

“<strong>EUVL</strong> practical mask structure with light shield area for 32nm half pitch <strong>and</strong> beyond,” Proc. <strong>of</strong> SPIE, Vol. 7122, 712227-1<br />

(2008).<br />

[12] Driessen, F. A. J. M., Davydova, N.V., Jiang, J., Kang, H., Vaenk<strong>at</strong>esan, V., Oorschot, D., Kim, I.S., Kang, S.N., Lee, Y.,<br />

Yeo, J., Gronlund, K., Liu, H.Y., van Ingen-Schenau, K., Peeters, R., Wagner, C., Zimmermann, J., Schumann, O., “Holistic<br />

lithography for EUV: NXE:3100 characteriz<strong>at</strong>ion <strong>of</strong> first printed wafers using an advanced scanner model <strong>and</strong><br />

sc<strong>at</strong>terometry,” Proc. SPIE, 8166-23 (2011).<br />

Proc. <strong>of</strong> SPIE Vol. 8166 816624-12<br />

Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/08/2013 Terms <strong>of</strong> Use: http://spiedl.org/terms

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