Seja bem vindo a Nanotech Alemanha - Nano in Germany
Seja bem vindo a Nanotech Alemanha - Nano in Germany
Seja bem vindo a Nanotech Alemanha - Nano in Germany
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Pr<strong>in</strong>cipal Office<br />
Fraunhofer IZM - Chemnitz Branch of the Institute<br />
Multi Device Integration<br />
Reichenha<strong>in</strong>er Strasse 88<br />
D-09126 Chemnitz<br />
<strong>Germany</strong><br />
Phone: (+)49 - 37 15 31 24 062<br />
Fax: (+)49 - 37 15 31 24 069<br />
E-Mail: <strong>in</strong>fo@che.izm.fraunhofer.de<br />
Web: www.pb.izm.fraunhofer.de/mdae<br />
Contact Person<br />
Prof. Dr. Thomas GESSNER<br />
Vice Director Fraunhofer IZM<br />
Phone: (+)49 - 37 15 31 24 060<br />
Fax: (+)49 - 37 15 31 24 069<br />
E-Mail: thomas.gessner@che.izm.fraunhofer.de<br />
The department Multi Device Integration was founded <strong>in</strong> 1998 and is located <strong>in</strong> Chemnitz,<br />
Saxony. Its basic fields are the development of Micro-(<strong>Nano</strong>)-Electro-Mechanical-Systems<br />
(MEMS), technologies and equipment for manufactur<strong>in</strong>g MEMS <strong>in</strong> silicon and other materials.<br />
Further research fields are back-end-of-l<strong>in</strong>e technologies for future micro and nano electronics,<br />
pr<strong>in</strong>ted electronic systems for ubiquitous low-cost applications and <strong>in</strong>vestigation of micro and<br />
nano reliability for smart systems. In near future Microsystems will be quite more<br />
multifunctional e. g. the <strong>in</strong>tegrated comb<strong>in</strong>ation of electronics for signal and <strong>in</strong>formation<br />
process<strong>in</strong>g with sensors and actuators <strong>in</strong> silicon and nonsilicon technologies. The so called multi<br />
device <strong>in</strong>tegration to smaller and smarter systems is our vision.<br />
Ma<strong>in</strong> Research Activities:<br />
Design and Development of MEMS<br />
• MEMS design and modell<strong>in</strong>g<br />
• Sensors, actuators, and electronics (e. g. acceleration sensors, gyroscopes, scanner)<br />
• Transducer and analyzer systems (i. e. spectrometer, ultra sonic)<br />
• Measurement and characterization<br />
Back-End-of-L<strong>in</strong>e BEOL<br />
• Sp<strong>in</strong>-on dielectrics, Air Gap structures, and <strong>in</strong>tegration of low-k dielectrics<br />
• Copper <strong>in</strong>terconnect metallization systems (e.g. 45nm pitches) and diffusion barriers,<br />
• Scal<strong>in</strong>g effects, reliability, modell<strong>in</strong>g and simulation<br />
Development of Advanced Technologies<br />
• 3D-pattern<strong>in</strong>g, deep silicon etch<strong>in</strong>g and wire, chip and wafer bond<strong>in</strong>g technologies,<br />
• Chemical mechanical planarization (CMP)<br />
• MEMS Packag<strong>in</strong>g at wafer level<br />
Micro and <strong>Nano</strong> Reliability<br />
• Reliability for Microsystems e. g. for Automotive and IT applications<br />
• Comb<strong>in</strong>ation of Reliability, M<strong>in</strong>iaturization and Microsecurity<br />
• Thermomechanical Simulation and Reliability for <strong>Nano</strong>electronics<br />
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