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2008(№7) - Санкт-Петербургский государственный ...

2008(№7) - Санкт-Петербургский государственный ...

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D. M. Grama, A. S. Petrov, S. D. Popov, R. M. Stepanov, E. V. Chilaeva<br />

INAS AUTOEPITAXIAL STRUCTURES FOR INFRA-RED RANGE PHOTODETECTORS<br />

InAs autoepitaxial layers were grown by CVD on 76 mm substrate in crystal direction<br />

(111)A. Exploration demonstrate, that the mechanism of InAs epitaxial growth changes under<br />

temperature fluctuation. Layer purity depends, first of all, on initial materials purity and indium<br />

mole fraction at arsenic mole fraction ratio in gas phase. Layer growth in optimal conditions<br />

characterizes majority-carrier concentration (1.5…3.0)10 15 см –3 and carrier mobility<br />

(0.8…1.2) 10 5 см 2 /(В · с) under 77 K.<br />

CVD method, kinetic limitation, thermodynamic limitation, majority-carrier concentration and mobility,<br />

surface defect density, mechanical and chemical-mechanical polishing<br />

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