Annual Report 2007 - The Australian Nanotechnology Network
Annual Report 2007 - The Australian Nanotechnology Network
Annual Report 2007 - The Australian Nanotechnology Network
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Dr H C Liu<br />
H. C. Liu was born in the city of Taiyuan in China. He received his BSc in physics from<br />
Lanzhou University (China) in 1982, and PhD in applied physics from the University of<br />
Pittsburgh (USA) in 1987 as an Andrew Mellon Predoctoral Fellow. Dr. Liu’s major research<br />
interest is semiconductor nanoscience and quantum devices. Dr. Liu joined the Institute for<br />
Microstructural Sciences of the National Research Council of Canada in 1987. He is currently<br />
the Terahertz & Imaging Devices Group Leader in the Institute. Dr. Liu has authored or coauthored<br />
more than 300 refereed journal articles (with about 90 as first or sole author), and given<br />
more than 108 presentations (67 invited) at international conferences. He was elected Fellow of<br />
the American Physical Society (APS) and Fellow of the Institute of Electrical and Electronics<br />
Engineers (IEEE), has been granted over a dozen patents, and has been awarded the Herzberg<br />
Medal from the Canadian Association of Physicists in 2000, the Bessel Prize from the Alexander<br />
von Humboldt Foundation in 2001, and the Chinese Overseas Distinguished Young Scientist<br />
Award (NSFC-B) in 2005. He holds chair/adjunct/guest/honorary professorships in 11<br />
institutions in Canada, China, and the USA.<br />
During his tour, he presented his talk on Terahertz Nano-Optoelectronics and gave a seminar in<br />
the following cities:<br />
University of Adelaide – Adelaide<br />
<strong>Australian</strong> National University – Canberra<br />
University of New South Wales – Sydney<br />
Abstract<br />
Terahertz (THz) technology is generally regarded as one of the most promising candidates to<br />
bring about totally new and revolutionary applications. <strong>The</strong> aim of my research is twofold: (1)<br />
good science in nanostructures and (2) creation of sensing technologies based on THz nanooptoelectronics.<br />
Here, the nanostructures are semiconductor quantum dots (QD) and quantum<br />
wells (QW) as well as their combinations. With QDs and QWs, atomic-like quantum processes<br />
between confined levels within the conduction band (intersublevel and intersubband transition)<br />
are studied, THz nanodevices such as emitters and detectors are investigated. Examples to be<br />
discussed are intersublevel transition in QDs and possible implementation of THz lasers based<br />
on this process, THz quantum well photodetectors, THz quantum cascade lasers, quantum optic<br />
processes, and potentially unique applications in the THz spectrum.<br />
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