MB9A110 Series - Fujitsu
MB9A110 Series - Fujitsu
MB9A110 Series - Fujitsu
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Flash Memory Write/Erase Characteristics<br />
DS706-00011-1v0-E<br />
<strong>MB9A110</strong> <strong>Series</strong><br />
(Vcc = 2.7V to 5.5V, Ta = - 40°C to + 105°C)<br />
Parameter<br />
Min<br />
Value<br />
Typ Max<br />
Value Remarks<br />
Sector<br />
erase time<br />
Large Sector<br />
Small Sector<br />
-<br />
0.7<br />
0.3<br />
3.3<br />
1.1<br />
s<br />
Includes write time prior to<br />
internal erase<br />
Half word (16 bit)<br />
write time<br />
- 12 384 μs<br />
Not including system-level<br />
overhead time.<br />
Chip<br />
erase time<br />
64K/128K/256KByte<br />
384K/512KByte<br />
-<br />
5.2<br />
8<br />
23.6<br />
38.4<br />
s<br />
s<br />
Includes write time prior to<br />
internal erase<br />
Erase/write cycles and data hold time (targeted value)<br />
Erase/write cycles<br />
(cycle)<br />
Data hold time<br />
(year)<br />
Remarks<br />
1,000 20 *<br />
10,000 10 *<br />
100,000 5 *<br />
*: This value comes from the quality and reliability test (using Arrhenius equation to translate high temperature<br />
stress test result into normalized value at + 85°C) .<br />
97
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