Update on irradiation effects in optical fibers and optoelectronic ... - IFA

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Association EURATOM MEdC Research results with the photodiode exposed to optical radiation The temporal variation of the Si photodiode signal, after electron beam irradiation, measured at a constant incident optical power, for the wavelength λ = 636 nm. The temporal variation of the Si photodiode signal, after gamma irradiation, measured at a constant incident optical power, for the wavelength λ = 653 nm.
Association EURATOM MEdC Research results: spatial responsivity c b a The spatial responsivity for the Si photodiode, scanned along the Y axis with a laser beam spot of about 0.8 mm diameter (λ = 653 nm), after gamma irradiation: a – non-irradiated photodiode; b – 90 kGy total irradiation dose; c - 190 kGy total irradiation dose.
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Update on irradiation effects in optical fibers and optoelectronic ... - IFA

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