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Update on irradiation effects in optical fibers and optoelectronic ... - IFA

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Associati<strong>on</strong> EURATOM MEdC<br />

A. Investigati<strong>on</strong>s <strong>on</strong> the gamma-ray <strong>and</strong> electr<strong>on</strong> beam<br />

radiati<strong>on</strong> <strong>effects</strong> <strong>on</strong> semic<strong>on</strong>ductor <strong>optical</strong> detectors for<br />

sens<strong>in</strong>g <strong>and</strong> <strong>optical</strong> communicati<strong>on</strong> applicati<strong>on</strong>s<br />

The characteristics of the <strong>in</strong>vestigated photodiodes<br />

Photodiode designati<strong>on</strong>/<br />

Characteristics<br />

Ph 1 (2) Ph 3 (4) Ph 5 (6)<br />

Material Si Si InGaAs<br />

Sens<strong>in</strong>g area (mm) □ = 3 x 3 Φ = 0.991 Φ = 0.3<br />

Capacitance (pF) - 5.2 (V R<br />

= 3.3 V) 5<br />

Max. reverse voltage (V) 30 20 15<br />

Max. reverse current (mA) - - 5<br />

Max. Forward current (mA) - - 25<br />

Resp<strong>on</strong>sivity (A/W) 30 nA/lx 0.5 0.9 (1310 nm)<br />

0,95 (1550 nm)<br />

Dark current (nA) 50 0.3 6<br />

NEP (W/Hz 1/2 ) - - 6.28 x 10 -15<br />

Rise/ fall time (ns) 100 ms 1200 1.5<br />

Days of Associati<strong>on</strong> EURATOM/MEdC, October 10-11, 2006, Cluj-Napoca

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