SS 2005 - Kristallographisches Institut - Albert-Ludwigs-Universität ...

Albert-Ludwigs-Universität Freiburg • Hebelstr. 25 • D-79104 Freiburg
SS 2005
Kristallographisches Institut
Prof. Dr. Arne Cröll
Mai 2005
Seminar
"Aktuelle Fragen der Kristallzüchtung"
Ort:
Beginn:
SR KI – Nr. 01 015, Hermann-Herder-Str. 5, (1.OG)
jeweils Mittwoch, 12.15 h
11.05.
11.05.
A. Cröll
Study of the oxygen incorporation during growth of large CaF 2 -crystals
A. Molchanov, J. Friedrich, G. Wehrhan and G. Müller - JCG 273, 3-4, 629
O. Aniol
Growth and properties of 40 mm diameter Hg 1-x Cd x Te using the two-stage
Pressurised Bridgman Method
Yue Wang, Quanbao Li, Qinglin Han, Qinghua Ma, Ronbin Ju, Bingwen
Song, Wanqi Jie; Yaohe Zhou and Yuko Inatomi
JCG 273, 1-2, 1
25.05.
E. Keller
Das Bindungsvalenz-Konzept zur Vorhersage und Interpretation von
Atomabständen in Kristallen
25.05.
R. Boger
In situ monitoring of the stress evolution in growing group-III-nitride-layers
A. Krost et al. JCG 275 (2005) 209-216
Vorschau V. Babentsov
In situ observation for semiconductor solution growth using a near-infrared
micros Termine microscope
folgen
Y Y. Inatomi et al. JCG 275 (2005) 193

Fortsetzung Vorschau: Seminar “Aktuelle Fragen der Kristallzüchtung”
2
Vorschau
Termine
folgen
A. Cröll
The effect of nitrogen on void formation in Czochralski silicon crystals
V. V. Voronkov and R. Falster – JCG 273, 3-4, 412
M. Fiederle
A new growth method for Cdte: a breakthrough towards large areas
B. Pelliciari et al. JCG 275 (2005) 99-105
N. Graf
InN layers grown on silicon substrates: effect of substrate temperature and
buffer layers
J. Grandal et al. JCG 275 (2005) 373-377
A. Danilewsky
l
Semiconductor Bridgman growth inside inertial flight mode orbiting systems of
low orbital eccentricity and long orbital period
X. Ruiz and M. Ermakov – JCG 273, 3-4, 629
R. Boger
Growth and characterization of single-crystalline gallium nitride using (100)
LiAlO 2 subrates
M. D. Reed, O. M. Kryliouk, M. A. Mastro and T. J. Anderson
JCG 274, 1-2, 14