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COVER STORY 2500A/1200V Dual IGBT Module The chip layout has been designed for increasing cooling capacity using liquid cooling A 2500A/1200V dual IGBT module for industrial use is reported. A small inductance internal wiring structure from the P to N terminals has been developed for this large current device. Semiconductor chips are arranged for the purpose of increasing the cooling capability of the module and an aluminium base plate with a direct bonded insulation substrate is used for the purpose of increasing the thermal cycling capability. To achieve a better thermal contact between the base plate and the cooling fin for such a large base area device, the base plate is separated into several sections. The 2500A/1200V dual IGBT module package has also applied to a 1800A/1700V dual IGBT module. Our conventional IGBT module series, named MPD (Mega Power Dual), which includes a 1400A/1200V dual device, was developed to allow for the better design of larger industrial power equipment. However, with the recent expansion of renewable energy generation systems like wind power and photovoltaic, there is a demand for larger overall system power. To realize this higher power market demand in a simple form factor, a new 2500A/1200V dual IGBT module has been developed. Terminal layout The outline of this module is shown in Figure 1. The package length is about twice that of the width. The main P and N terminals are located to one side, and the AC terminal is located at the opposite side of the package for convenient inverter stack design. The signal terminals are located in the middle area of the package and so allow for simple mounting of the gate driver board directly on top of the module. This terminal design also allows for simple wiring when the driver board is located separately to the module. Structure of base plate As the base plate area gets larger, it becomes difficult to get a good fit between the base plate and the cooling fin. To solve this problem, separated base plate sections are used for this module. The module case consists of two parts in the direction of height to sustain the bending stress caused by the separated base plate sections. This By Ayumi Maruta, Mitsuharu Tabata, Power Device Works, Mitsubishi Electric Corporation, Japan structure allows for independent screening tests for each base plate section. In this respect, existing test equipment normally for testing smaller devices can be utilised. Figure 1: Outline of module Figure 2: Image of to fit cooling fin Figure 3: Structure of separated base plate The total power loss in such large module can be more than 5kW at maximum power in an inverter application. For such high power loss it is normal to use liquid cooling and a value of 5000[W/m 2 K] is what one might typically need for liquid cooling in such an application. In liquid cooling systems the case temperature changes faster than for aircooled systems and so thermal cycle capability and thermal radiation ability is important. A module will require about 400[cm 2 ] @ΔTc=25K of liquid cooling fin under the 5000[W/m 2 K] condition. The chosen base plate size of our new 2500A/1200V dual module is sufficient for this thermal radiation ability. However, liquid cooling causes a large change in case temperature and so it is necessary to increase the thermal cycling capability of the module. To be able to achieve this, an aluminium base plate with a directly bonded insulation substrate is used (Figure 5). This base plate structure allows for the removal of the solder layer between the base plate and the isolation ceramic, a well known weak point in the structure of a conventional module after thermal cycling has taken place (Figure 4). This solder layer is subjected to degradation by temperature cycling stress resulting in an increasing thermal resistance Rth(j-c) over the lifetime of the module. The thermal resistance of conventional copper base plate structure and aluminium base plate structure is compared by simulation. The cross sections of a cop- 24 Bodo´s Power Systems ® August 2009 www.bodospower.com
per base plate structure and an aluminium base plate structure are shown in Figure 4 and Figure 5. Figure 4: Cross-section of copper base plate structure Figure 5: Cross-section of aluminium base plate structure Figure 6 and Figure 7 show thermal resistance simulation results of the copper base plate structure and of the aluminium base plate structure respectively. The thermal resistance values of both types are almost the same even though the thermal conduc- Figure 6: Thermal distribution of chip surface (aluminium base plate) Figure 7: Thermal distribution of chip surface (copper base plate) tivity of aluminium is inferior to that of copper. This is a direct result of the elimination of the small conductivity solder layer. Power Your Recognition Instantly Based in Munich, Germany, ITPR Information-Travels Public Relations is a full-service consultancy with over a decade of experience in the electronics sector. As a small exclusive agency, we offer extremely high ROI, no-nonsense flexibility and highest priority to only a handful of companies. Strategical Support Corporate/Product Positioning, Market/Competitive Analysis, PR Programs, Roadmaps, Media Training, Business Development, Partnerships, Channel Marketing, Online Marketing Tactical PR Writing: Press Releases, Feature Articles, Commentaries, Case Studies, White Papers Organizing: Media Briefings, Road Shows, Product Placements in Reviews and Market Overviews, Exhibitions, Press Conferences Monitoring and Research: Speaking Opportunities, Editorial Calendars, Feature Placement, Media Coverage, Competitive Analysis Translations: Releases, By-Lined Articles, Websites, etc. Call or contact us today for a free consultation on how PR can dramatically affect your company’s bottom line. ITPR Information-Travels Public Relations Stefanusstrasse 6a, 82166 Gräfelfing-Munich, Germany Tel ++49 (89) 898687-20, Fax ++49 (89) 898687-21, electronics@information-travels.com www.information-travels.com COVER STORY Chip layout The chip layout has been designed for the purpose of increasing the cooling capacity when using liquid cooling. The distance required between one chip and another in order to suppress the chip’s mutual thermal interference has been verified by simulation. Figure 8: Structure for simulation Figure 9: Internal chip distance versus water flow Figure 8 shows the structure for this simulation. Figure 9 shows the result of simulation of temperature difference between chip and www.bodospower.com August 2009 Bodo´s Power Systems ® www.bodospower.com August 2009 Bodo´s Power Systems ® 25
Page 1 and 2: ISSN: 1863-5598 ZKZ 64717 08-09 Ele
Page 3 and 4: www.bodospower.com August 2009 CONT
Page 5 and 6: PressFIT - solder-less and reliable
Page 8 and 9: NEWS Luc Van den hove to Serve as P
Page 10: NEWS Patent for Hyper-X Magnetic Te
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