EEN1016 Electronics I - Faculty of Engineering - Multimedia University
EEN1016 Electronics I - Faculty of Engineering - Multimedia University
EEN1016 Electronics I - Faculty of Engineering - Multimedia University
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<strong>EEN1016</strong> <strong>Electronics</strong> I: BE1<br />
APPENDIX E<br />
Diode and BJT characteristics<br />
Figure AE1: Forward voltage characteristics <strong>of</strong> diode 1N4148 (from National<br />
Semiconductor data sheets)<br />
Table AE 1: DC current gain h FE <strong>of</strong> 2N3904 at 25°C (from Motolora data sheets)<br />
Conditions (DC) h FE,min h FE,max<br />
I C = 0.1 mA, V CE = 1.0 V 40 -<br />
I C = 1.0 mA, V CE = 1.0 V 70 -<br />
I C = 10 mA, V CE = 1.0 V 100 300<br />
Figure AE 2: PSpice simulated output characteristics <strong>of</strong> 2N3904<br />
6.0mA<br />
30 µA<br />
4.0mA<br />
20 µA<br />
15 µA<br />
2.0mA<br />
10 µA<br />
0.75mA<br />
6.5 µA<br />
5 µA<br />
0A<br />
0V 5V 10V 15V<br />
IC(Q1)<br />
V_Vce 10.1V 13V 15V<br />
<strong>Faculty</strong> <strong>of</strong> <strong>Engineering</strong>, <strong>Multimedia</strong> <strong>University</strong><br />
Appendix E
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