02-a Wet etching - Caltech Micromachining Laboratory

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&~s t*c,k: ;] The H2SOc-H2O2-H2O System. j -1 H2<strong>02</strong> .J ~ J }] H 0 250. 2 Flg.9.2 Isoetch curves for gallium arsenide (H2SO.:H2O2:H2O system). From Iida and Ito [15]. Reprinted with permission of the publisher, The Electrochemical Society, Inc. i J a a 0 The H3POc-H2O2-H2O System. 0 il 1 ~o il 30oC (100) 0 \ U ~ ~ -0 i-l 85 wt. % H3PO4 +- H3PO4 vol. % 30 wt. % H20s 0 0 Fig. 9,3 Isoetch curves for gallium arsenide (H]PO.: H2O2: H2O system). From Morl and Watanabe [17]. Reprinted with permission of the publisher. The Electrochemical Society, Inc. . Q i ,. I "..:.",,; " UO! '\ j !
Defects delineated by <strong>etching</strong> Precipitate with prismatic loops Plate-like precipitate with dislocations
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Page 12 and 13: New Journal of Physics 5 (2003) 100
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02-a Wet etching - Caltech Micromachining Laboratory

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