02-a Wet etching - Caltech Micromachining Laboratory

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-"- --~ Table 9.5 Etchants for Noncrystalline Films. Material Etchant Remark . m ~) ~"', ~~;t; Si02 28 rol HF BHF. 1000-2500 A/min at 25°C 170 ml H2O 113 g N~F 15 rol HF P-etch, 128 A/min at 25°C to rol HN03 300 ml H2O I m1 BHF 7 m1 H2O 800 A/min BSG 1 m1 HF R-~tch, 300 A/min for 9 mole % 100 m1 HN03 B2O3' 50 A/min for Si02 100 m1 H2O 4.4 m1 HF S-etch. 750 A/rnin for 9 mole % 100 inl HN03 B2O3' 135 A/min for Si02 100 rol H2O PSG 28- rol HF BHF, 5500 A/min for 8 mole % 170 rol H2O P2O5 113 g NH4F 15 rol HF P-etch, 34,000 A/min for 16 mole 10 ml HN03 % P2O5, 110 A/roin for Si02 300 ml H2O I ml BHF 7 ml H2O 800 A/min Si3N4 HF 140 A/min, CVD at I 100°C 750 A/min. CVD at 9()()OC 1000 A/min. CVD at 800°C 28 ml HF BHF. 5-10 A/min 170 ml H2O ..I 13 g NH4F H3PO4 100 A/min at 180°C Polysilicon 6 ml HF 8000 A/min, smooth edges 100 ml HN03 40 ml H2O ~ '. I ml HF 1500 A/min 26 ml HN03 . 33 ml CH3COOH 'r SIPOS I ml HF 2000 A/min for 20% O2 film 6 ml H2O 10 ml NH4F (40%) Table 9.5 (Continued) Material Etchant Remark AI I rol Hcl 80°C, fine line, can be used with 2 rol H2O gallium arsenide 4 ml H3P04 350 Almin, fine line, will attack I rol HNO] gallium arsenide 4 rol CH)COOH I rolH2O 16-19 ml H]P04 1500-2500 A/min. ~ill attack , I rol HNO] gallium arsenide J 0-4 ml H2O ...~ \ 0.1 M K2Br40, IILm/min. pH 13.6. no gas r 0.51 M KOH evolved during etching 0.6 M K]Fe(CN)6
U! 's=-!,.- - r--- "~ t' 1--, ' Table 9.5 (Continued) (] Material Etchant Remark ; W 34 g KH2PO. 1600 Nmin, high resolution, 13.4 g KOH resist mask can be used 0 '33 g K)Fe(CN)6 H2O to make I liter Pt 3 ml HCI Aqua regia, 20 lLm/min, precede 0 I ml HNO) by a 30 s immersion in HF 7 ml HCI 400-500 Nmin, 85°C I ml HNO) 8 ml H2O 0 Pd 1 ml HCI 1000 Nmin \0 ml HNO) \0 ml CH)COOH 0 4 g KI 1 lLm/min, opaque, must be 1 g 12 rinsed before visual inspection 40 ml H2O 0 .Listed in the order in which they are described in Section 9.1.6. 0 Au 3 ml HCI -Aqua regia. 25-50 ILm/min -1 ml HNO) Ci 4 g KI 0.5-1 ILm/min. can be used with 1 g 12 resist J 40 ml H2O 0 Ag I ml NH.OH 3600 Nmin. can be used with , I ml H2O2 resists. m~st be rinsed rapidly 4 ml CH)OH after etching C; Cr I ml HCI 800 Nmin. needs depassivation I ml glycerine ,. I ml HCI 800 A/min. needs depassivation 0: 9 ml saturated CeSO. solution j I,. I mi. I g NaOH in 2 ml H2O. 250-1000 Nmin, no 3 ml, I g K)Fe(CN)6 in 3 ml depassivation, resist ma$k can 0 H2O be used -Mo 5 ml HJPO. 0.5 lLm/min, re~ist mask can be -'-'; , 2 ml HNO) used , 0::-..'. 4 ml CH)COOH , 150 ml H2O ., 5 ml H)PO. Polishing etch C: 3 ml HNO) 2 ml H2O II g K)Fe(CN)6 r: 10gKOH L-! 150 ml H2O I ILm/min S25 ri L n -'" i$r)~ "};",,'\; I ;1~fJct -$~ -A .;;"- i ,\
Page 5: Table 9.1 Compositions of Commonly
Page 10 and 11: &~s t*c,k: ;] The H2SOc-H2O2-H2O Sy
Page 12 and 13: New Journal of Physics 5 (2003) 100
Page 14 and 15: "...-~-: 1804' .' -J. Electrochem.
Page 16 and 17: .-.~~C.Tocnem. ~~.: ~LJD-STATE SCIE

02-a Wet etching - Caltech Micromachining Laboratory

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