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HY16F188 21-Bit ENOB Σ∆ADC 32-Bit MCU and 64 KB Flash 7. Electrical Characteristics Absolute maximum ratings over operating free-air temperature (unless otherwise noted) Voltage applied at VDD3V to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to 4.0 V Voltage applied to any pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to V DD3V + 0.3 V Diode current at any device terminal. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . ±2 mA Storage temperature, Tstg: (Unprogrammed device) . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . .−55℃ to 150℃ (Programmed device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ………………………………… .. −40℃ to 85℃ Soldering Temperature (10 Sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ….. . .+260°C Maximum output current sink by any PORT1 to PORT3 I/O PIN . . . . . . . . . . . . . . . . . . . . . . . . …. . . . . .10mA This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. 7.1 Recommended Operating Conditions VDD3V=2.2V to 3.6V.T A =-40℃~85℃,Unless otherwise noted. Parameter Sym. Test Conditions Min. Typ. Max. Unit Supply Voltage VDD3V 2.2 3.6 V Supply Current I LDO+BOR -25% 2.0 +25% VDD3V = 2.2V to 3.6V. -25% 2.5 +25% I LDO+BOR+LPO . Power–Up Delay t PU,DLY Wake up from deep sleep 64 ms uA © 2013 HYCON Technology Corp www.hycontek.com DS-HY16F188-V06_EN page42
HY16F188 21-Bit ENOB Σ∆ADC 32-Bit MCU and 64 KB Flash 7.2 Clock System Typical values are at TA=25℃ and VDD3V= 3.0V.Unless otherwise noted. Sym. Parameter Test Conditions Min. Typ. Max. Unit 2MHz 1.8 2 2.2 MHz High Speed Oscillator 4MHz 3.6 4 4.4 MHz FXHS frequency 10MHz 8.5 10 11.5 MHz 20MHz 17 20 23 MHz IXHS High Speed Oscillator Current F XHS = 16MHz 100 uA DXHS Duty of High Oscillator 40 60 % TLXHS Temperature Trim Step 8MHz 0.25 ppm TRXHS Temperature Trim Range 8MHz -64 +63 LSB FXMS Middle Speed Oscillator frequency VDD18 = 1.8V 2 12 MHz IXMS Middle Speed Oscillator Current F XHS = 4MHz 25 uA DXMS Duty of Middle Oscillator 40 60 % TLXHS Temperature Trim Step 8MHz 0.25 ppm TRXHS Temperature Trim Range 8MHz -64 +63 LSB FXLS Low Speed Oscillator frequency VDD18 = 1.8V 32.768 KHz . IXLS Low Speed Oscillator Current 2 uA DXLS Duty of Low Speed Oscillator 40 60 % F HAO = 2MHz, before trim -10% 2 +10% MHz Internal High Speed F HAO = 4MHz, before trim -10% 4 +10% MHz FHAO Oscillator frequency F HAO = 10MHz, before trim -10% 10 +10% MHz F HAO = 20MHz, before trim -10% 20 +10% MHz Voltage Coefficient VDD3V = 2.2V ~3.6V -0.2 +0.2 % THAO Temperature Coefficient -40~85 -1.5 +1.5 % Internal High Speed F HAO = 2MHz 20 uA IHAO Oscillator Current F HAO = 20MHz 60 uA DHAO Duty of Oscillator 40 60 % WTHAO Wake up time F HAO = 2MHz 30 us FLPO Internal Low Speed Oscillator frequency VDD3V= 3.0V -10% 32 +10% KHz Voltage Coefficient VDD3V= 2.2V ~3.6V -2.5 +2.5 % TLPO Temperature Coefficient -40~85 -2.5 +2.5 % Internal Low Speed ILPO 0.35 0.7 uA Oscillator Current DLPO Duty of Low Speed Oscillator 40 60 % © 2013 HYCON Technology Corp www.hycontek.com DS-HY16F188-V06_EN page43
Page 1 and 2: HY16F188 Datasheet . High Precision
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