Low Light Intensity Performance of N- and P-Type ... - ISC Konstanz

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origin of power loss without R shunt -> drop of P mpp,rel directly proportional to Voc drop for R shunt > 1Mcm² -> logarithmic behavior according to Voc = kT/q * ln(I phot /I R +1) Andreas Halm, PVSEC-21 Fukuoka, Japan, 2011 8
simulated influence of R shunt Silvaco ATLAS simulation : • ideal cell device including Rseries and Rshunt • no Rcontact considered • extraction of IV parameters at 0.02 suns with varying Rshunt -> good agreement of experiment and simulation -> simulation confirms that for Rshunt > 1 Mcm² no more significant effect on the IV parameters is observed Andreas Halm, PVSEC-21 Fukuoka, Japan, 2011 9
Page 1 and 2: LOW LIGHT INTENSITY PERFORMANCE OF
Page 3 and 4: motivation N-type on wafer level: n
Page 5 and 6: IV measurements - standard cells de
Page 7: influence of parallel resistance
Page 11 and 12: elative power output outdoors • o
Page 13 and 14: Pmpp,rel vs. intensity outdoors For
Page 15 and 16: comparison of energy harvest -5.4%
Page 17 and 18: summary L eff p-type R shunt L eff
Page 19: acknowledgements • “Schwachlich

Low Light Intensity Performance of N- and P-Type ... - ISC Konstanz

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