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ACS <strong>Combinatorial</strong> Science<br />

REVIEW<br />

Figure 21. Composition spread exploration <strong>of</strong> thermoelectric materials.<br />

Picture <strong>of</strong> the Co Ce Sn composition spread wafer (upper left);<br />

Electrical conductivity map (upper right); Seeback coefficient map<br />

(lower left); Power factor map (lower right). Reproduced with permission<br />

from JJAP 48, 05EB02 (2009).<br />

composition spreads were fabricated using natural cosputtering.<br />

50 nm thick library thin films were deposited on Si wafers coated<br />

with 6-nm-thick HfO 2 through a shadow mask so as to generate<br />

arrays <strong>of</strong> 250 μm 250 μm capacitors with top metal electrode<br />

having continuously varying composition. Capacitance voltage<br />

<strong>and</strong> current voltage characteristics were measured for the<br />

hundreds <strong>of</strong> capacitors to attain mapping <strong>of</strong> the equivalent oxide<br />

thickness (EOT), flatb<strong>and</strong> voltage, <strong>and</strong> the leakage current. EOT<br />

is an important figure <strong>of</strong> merit, <strong>and</strong> the International Technology<br />

Roadmap for Semiconductors dictates that EOT as thin as<br />

0.8 nm is necessary for the next generation technology. 232 The<br />

library showed that because <strong>of</strong> the formation <strong>of</strong> interface oxide<br />

between HfO 2 <strong>and</strong> Si, the average value <strong>of</strong> EOT was 1.9 nm.<br />

Figure 22 shows the leakage current map measured at 1 V. <strong>High</strong><br />

leakage is observed near Ti-rich composition, consistent with the<br />

fact that the extracted values <strong>of</strong> the work function are the lowest<br />

within the ternary in this region. This experiment demonstrated<br />

that one can use the combinatorial approach to effectively decipher<br />

the complex <strong>and</strong> convoluted issues <strong>of</strong> the work function, flatb<strong>and</strong><br />

voltage shift, oxide charge, <strong>and</strong> thermal stability for metal gate stack<br />

integration. There is large compositional phase space <strong>of</strong> metallic<br />

alloys to be explored for identification <strong>of</strong> the ideal metal electrode,<br />

<strong>and</strong> this is an important step in implementing the high-throughput<br />

strategy to materials topics which are established with advanced<br />

semiconductor manufacturing <strong>and</strong> processing technologies.<br />

3.2.3. <strong>Combinatorial</strong> Mapping <strong>of</strong> Structural Phases Across<br />

Ternary Metallic Alloy Systems. There have been many other<br />

examples <strong>of</strong> combinatorial studies <strong>of</strong> metallic alloy systems.<br />

Among the notable developments are methodology for mapping<br />

the metallic glass <strong>and</strong> amorphous metal systems 233 <strong>and</strong> the use <strong>of</strong><br />

molecular beam epitaxy for fabrication <strong>of</strong> epitaxial composition<br />

spreads in search <strong>of</strong> magnetic semiconductors. 234 These examples<br />

underscore the significance <strong>of</strong> tracking subtle structural<br />

changes across composition spread samples in pseudobinary <strong>and</strong><br />

pseudomultinary solid solution systems. In other instances, it is<br />

<strong>of</strong> interest to map distribution <strong>of</strong> structural phases across, for<br />

instance, entire ternary phase diagrams containing compositions<br />

Figure 22. Exploration <strong>of</strong> novel gate electrode material. Leakage<br />

current density <strong>of</strong> sputtered Ni Ti Pt library is mapped. The dielectric<br />

was 6 nm HfO 2 on Si. From ref 230. Applied physics letters by<br />

AMERICAN INSTITUTE OF PHYSICS. Reproduced with permission<br />

<strong>of</strong> AMERICAN INSTITUTE OF PHYSICS. in the format Journal via<br />

Copyright Clearance Center.<br />

regions with vastly different structures. For such studies, full<br />

range XRD spectra need to be analyzed for the entire spread.<br />

This becomes a daunting task since one needs to analyze the<br />

details <strong>of</strong> a large number <strong>of</strong> diffraction spectra which are very<br />

different from each other. To reduce the difficulty <strong>of</strong> this task,<br />

tools <strong>and</strong> techniques, which can be used to analyze many<br />

diffraction spectra at once, instead <strong>of</strong> the traditional one at a<br />

time approach are being developed. In an earlier work, techniques<br />

for visualization <strong>of</strong> diffraction data from ternary composition<br />

libraries, 235 as well as clustering analysis to sort spectra into<br />

discrete groups in an effort to rapidly map the distribution <strong>of</strong><br />

structural phases across ternary phase diagrams had been<br />

reported. 236 More recently, a technique called non-negative<br />

matrix factorization (NMF) has been applied to the problem<br />

<strong>of</strong> identifying the unique patterns which are present in a set <strong>of</strong><br />

XRD spectra as well as quantifying the contribution <strong>of</strong> those<br />

patterns to each experimental spectrum. 237 As an example<br />

system, a composition region <strong>of</strong> the Fe Ga Pd ternary system<br />

was examined. The interest in the Fe Ga Pd ternary system<br />

stems from the fact that the Fe Ga <strong>and</strong> Fe Pd binary phase<br />

diagrams contain compositions with unusual magnetic actuator<br />

properties. Fe Ga is a well-known material system exhibiting<br />

large magnetostriction for Ga content between 20 <strong>and</strong> 30 atomic<br />

percent. The origin <strong>of</strong> this property is attributed to the complexity<br />

<strong>of</strong> the Fe Ga binary phase diagram in this region. 238<br />

Fe 0.7 Pd 0.3 is a ferromagnetic shape memory alloy 239 whose<br />

martensitic transition is associated with a magnetic field induced<br />

strain <strong>of</strong> about 10 000 ppm. 240 Given the significance <strong>of</strong> these<br />

compositions, it is <strong>of</strong> interest to see how structures <strong>and</strong> functional<br />

properties evolve across the Fe Ga Pd ternary phase diagram.<br />

Natural thin film composition spreads <strong>of</strong> the Fe Ga Pd system<br />

were deposited at room temperature using an ultra high-vacuum<br />

three gun magnetron cosputtering system on 3-in. (76.2 mm)<br />

diameter (100) oriented Si wafer. The samples were then post<br />

annealed. XRD <strong>of</strong> the fabricated films was performed using the<br />

ω-scan mode <strong>of</strong> the D8 DISCOVER using the two-dimensional<br />

detector. The composition spread wafer contained a grid <strong>of</strong><br />

1.75 mm 1.75 mm squares with continuously changing<br />

602 dx.doi.org/10.1021/co200007w |ACS Comb. Sci. 2011, 13, 579–633

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