The first Transistor

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Minority carrier distribution in an npn BJT [D. A. Neamen, Semiconductor Physics and Devices, IRWIN, 1997] 23 Carrier profiles in forward-active regime [http://dspace.mit.edu/bitstream/handle/1721.1/36373/6-012Spring-2003/NR/rdonlyres/Electrical-Engineering-and-Computer-Science/6-012Microelectronic-Devices-and- CircuitsSpring2003/DD39CE25-C7AA-4503-999C-5E529728AE6A/0/lecture17.pdf] 24 12
Ideal pn junction current J J p n J p (x), J n (x) -x p 0 x n 總電流 J p ( x n ) J n (x) Jn( −xp) J p (x) Key concept = qA = qA Dp Lp Dn Ln p n no po ⋅e ⋅e VA / VT VA / VT ⎫ ⎪ ⎬ ⎪ ⎭ ⇒ J J p n N ∝ N A D x I = AJ = A[ J Dn = qA[( n L I = I o o ( e = qA[ = qA[( ∝ e n VA V T − −1) D L Eg kT p po n n n D L ( xn) + J Dp + p L po n nND p + + n ( −x no Dp Lp Dp L N p )( e A p p )] V A V T −1)] no ] )] n ] 2 i 25 Derivation of I-V equations of BJTs x x n Eo p x x LE P n P pn( x) nx ( ) = n −Δnx ( ) e Co 0 ≤ x ≤W B n −( x−xn)/ LC nE ( x) n Eo − x p p Bo 0 W B nC ( x ) − x n p Co −W / L B B B ΔpW ( B ) − Δp( 0) e x/ L ΔpW ( B ) − Δp( 0) e B px ( ) = pBo[( ) e − ( 2 sinh( W / L ) 2 sinh( W / L ) B B B W / LB B − x/ L B ) e ] 27 13
Page 1 and 2: [ 半導體元件概論 -2009
Page 3 and 4: Perspective view of an oxide-isolat
Page 5 and 6: 典型雙極性接面電晶
Page 7 and 8: 雙極性電晶體之基本
Page 9 and 10: Typical output characteristics of a
Page 11: 雙極性電晶體之基本
Page 15 and 16: Minority carrier distribution in an
Page 17 and 18: 電晶體之能帶圖 p n p n
Page 19 and 20: Gummel plot and dc current gain [R.
Page 21 and 22: BJT 應用之三種組態 [
Page 23 and 24: 共集 (CC) 組態電晶體
Page 25 and 26: BJT 之穿透崩潰 (punch-thro
Page 27 and 28: Non-ideal I-V characteristics of BJ
Page 29 and 30: Current crowding 58 Cross section o
Page 31 and 32: An interdigitated geometry to relea

The first Transistor

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