The first Transistor

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Figure-of-Merit for BJT performance [S. M. Sze, Modern Semiconductor Device Physics, John Wiley, 1998] 48 Non-ideal effects of BJTs 49 24
BJT 之穿透崩潰 (punch-through breakdown) W B E N + P N C punch-through breakdown voltage Depletion region B V 2 PT B B s ( = qN W / 2ε ) W B V B E N + P N B Depletion region C ΔV B 發生穿透崩潰時 V + V bi CB E c E c 50 電晶體與兩端間之崩潰曲線 ( 第三端開路 ) I 1 M = V 1 − ( ) I CEO BV CBO m I CEO BV CEO I CBO BV CBO 1/ m β I CBO = 1−α M V BV CEO = BV BV ≈ CBO CBO (1− α) I B = 0 I CEO I CBO I E = 0 1/ m 51 25
Page 1 and 2: [ 半導體元件概論 -2009
Page 3 and 4: Perspective view of an oxide-isolat
Page 5 and 6: 典型雙極性接面電晶
Page 7 and 8: 雙極性電晶體之基本
Page 9 and 10: Typical output characteristics of a
Page 11 and 12: 雙極性電晶體之基本
Page 13 and 14: Ideal pn junction current J J p n J
Page 15 and 16: Minority carrier distribution in an
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Page 19 and 20: Gummel plot and dc current gain [R.
Page 21 and 22: BJT 應用之三種組態 [
Page 23: 共集 (CC) 組態電晶體
Page 27 and 28: Non-ideal I-V characteristics of BJ
Page 29 and 30: Current crowding 58 Cross section o
Page 31 and 32: An interdigitated geometry to relea

The first Transistor

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