Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
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BackgroundExperimentalModelingSummaryMethodologySingle-bit<strong>Multiple</strong>-bitMRED simul<strong>at</strong>ed the TCAD deviceTCAD structure cre<strong>at</strong>ed from TI layout and processDevice simul<strong>at</strong>ed using LANL beam line neutron spectrumCopperlinesTungstenviasAlan Douglas TiptonSiliconbulkSingleCellNASA Review10
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