Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
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ConclusionsBackgroundExperimentalModelingSummaryConclusionsPublic<strong>at</strong>ions and talksFuture work<strong>Multiple</strong>-bit upset is increasing for highly-scaled devicesNeutron irradi<strong>at</strong>ion has been modeled using MRED for a TI90 nm CMOS technologySBU independent <strong>of</strong> device orient<strong>at</strong>ionProbability <strong>of</strong> MBU exhibits an angle dependence forneutron irradi<strong>at</strong>ionProbability increases <strong>at</strong> grazing anglesNeutron testing must account for these dependenciesAlan Douglas TiptonNASA Review17
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