Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
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BackgroundExperimentalModelingSummaryMethodologySingle-bit<strong>Multiple</strong>-bitSingle-bit simul<strong>at</strong>ion in good agreementCircuit simul<strong>at</strong>ion suggest Q crit = 4 fCSimul<strong>at</strong>ion in agreement with experimental d<strong>at</strong>a <strong>at</strong> Q CritAlan Douglas TiptonNASA Review14